QEB363
Abstract: No abstract text available
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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Infrared Phototransistor
Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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Infrared Phototransistor
c 5802
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QEB363
Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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Untitled
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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Untitled
Abstract: No abstract text available
Text: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor
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Untitled
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Text: TLP813 TO SH IBA TOSHIBA PHOTO-INTERRUPTER INFRARED LED + PHOTOTRANSISTOR TLP81 3 IMAGE SCANNERS, HANDHELD COPIERS COPIERS, FAX MACHINES PHOTO-ELECTRIC COUNTERS FOR DETECTING VARIOUS OBJECTS The TLP813 photo-interrupter combines a GaAs infrared LED with an Si phototransistor, and is
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Untitled
Abstract: No abstract text available
Text: Sidelooker Phototransistor TECHNOLOGIES QSE112/113/114 DESCRIPTION The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES * Tight production distribution with 3:1
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QSE11X
EE113
QEE123
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8mm PHOTOTRANSISTOR Part Number: AA3528P3S Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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DSAL0864
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QSB363
Abstract: QEB363 QEB373 "infrared phototransistor"
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package
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7402 ic configuration
Abstract: QSB363
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package
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Text: . u PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2E DESCRIPTION PACKAGE DIMENSIONS The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared em itting diode. FEATURES & APPLICATIONS JSir\ 1.9 TYP — 4.06 3ÜT 4_
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E90700
ST1603A
C207S
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QEB363
Abstract: QEB373 QSB363C Infrared Phototransistor 01060
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°
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01060
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Untitled
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Text: KT1600 Series 4PIN LSOP PHOTOTRANSISTOR PHOTOCOUPLER cosmo Description Schematic 4 1 The KT1600 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a 3 2 phototransistor detector. They are packaged in a 4 pin
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QEB363
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
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Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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TRANSISTOR SMD MARKING CODE A1 4pin
Abstract: No abstract text available
Text: KT1610 Series 4PIN LSOP PHOTOTRANSISTOR PHOTOCOUPLER cosmo Description Schematic 4 1 The KT1600 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a 3 2 phototransistor detector. They are packaged in a 4 pin
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AA3528F3S
Abstract: smd diode f3
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
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W2010
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Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
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Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE PRELIMINARY SPEC L-1544SF7C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. SF7 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. WATER CLEAR LENS AVAILABLE HIGH POWER OUTPUT.
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Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
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WP7113SF4C
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRARED EMITTING DIODE Part Number: WP7113SF4C Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes:
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