Infrared phototransistor TO18
Abstract: phototransistor visible light BOD100LH
Text: This component is RoHS compliant BOD100LH TO18 Plastic Phototransistor Leaded Housing Pb DESCRIPTION The BOD100LH is a silicon phototransistor in an Infrared transparent black TO18 package housed in a clip-in Polycarbonate housing with 750mm leads FEATURES
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BOD100LH
BOD100LH
750mm
/-10mm
26AWG
UL1061
880nm.
Infrared phototransistor TO18
phototransistor visible light
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Untitled
Abstract: No abstract text available
Text: RELIABILITY CONDITIONED HERMETIC PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT4R PACKAGE DIMENSIONS DESCRIPTION The MCT4R is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to a silicon planar phototransistor.
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MIL-STD-883
MIL-STD-883C
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EPH-3233
Abstract: high sensitivity phototransistor Infrared-Sensor phototransistor infrared
Text: ELEKON Phototransistor EPH-3233 High sensitivity High Sensitive NPN silicon phototransistor mounted in a TO-18 type header with clear epoxy encapsulation. Applications: Optical Switches, Infrared Sensors, Camera Stroboscpes Specifications & Ratings: Parameter @ 25ºC
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EPH-3233
200Lux
EPH-3233
high sensitivity phototransistor
Infrared-Sensor
phototransistor infrared
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT4 PACKAGE DIMENSIONS DESCRIPTION The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. FEATURES Hermetic package
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5c optocoupler
Abstract: C957
Text: [ s O PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT4 PACKAGE DIMENSIONS DESCRIPTION The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. FEATURES Hermetic package
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Untitled
Abstract: No abstract text available
Text: E9 RELIABILITY CONDITIONED HERMETIC PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS - 1 I -1 MCT4R PACKAGE DIMENSIONS DESCRIPTION The MCT4R is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to a silicon planar phototransistor.
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MIL-STD-883
MIL-STD-883C
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QED423
Abstract: QSD722 QSD723
Text: L*0 PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD722/723/724 PACKAGE DIMENSIONS DESCRIPTION The QSD72X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES •Tight production distribution. ■Steel lead frames for improved reliability in solder
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QSD722/723/724
QSD72X
QED423/
QSD723
QS0724
10Oil
100il
mW/cm2161
QED423
QSD722
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Untitled
Abstract: No abstract text available
Text: [*T i PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD422/423/424 PACKAGE DIMENSIONS DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. R E FER E N C E SU RFACE FEATURES EMITTER .800 20.3 MIN
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QSD422/423/424
QSD42X
QED423/
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER IPTIELEETMIICS MCT4 PACKAGE DIMENSIONS DESCRIPTION The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. FEATURES Hermetic package High current transfer ratio; typically 35%
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bfi51
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EE-SMR1-1
Abstract: EESMR1-1 ee-smr1
Text: EE-SMR1-1 Top View Reflective Phototransistor Model Subminiature, with stem size of 5.8 mm dia. TO-18 Extended life and high reliability assured through use of infrared LED and phototransistor Ordering Information Appearance Sensing method Sensing
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1-800-55-OMRON
EE-SMR1-1
EESMR1-1
ee-smr1
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Untitled
Abstract: No abstract text available
Text: [SU PLASTIC SILICON PHOTOTRANSISTOR 0 P I O E L E C T I O H ICS QSD722/723/724 The QSD72X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES Tight production distribution. Steel lead frames for improved reliability in solder
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QSD722/723/724
QSD72X
QED423/
ST2146
74bbfl51
0Q0b302
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1N6265
Abstract: No abstract text available
Text: 1N6265 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM
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1N6265
1N6265
DS300277
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1N6264
Abstract: No abstract text available
Text: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM
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1N6264
1N6264
DS300276
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L14G1
Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
Text: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package
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1N6266
1N6266
DS300278
L14G1
l14g1 equivalent
infrared led
L14G2 circuit design
L14G2 application note
Phototransistor L14G2
fairchild make INFRARED EMITTING DIODE TO18
L14G1 phototransistor
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Infrared phototransistor TO18
Abstract: No abstract text available
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 QSD723 QSD724 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM
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QSD722
QSD723
QSD724
QSD722/723/724
QED523
QSD723
Infrared phototransistor TO18
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Untitled
Abstract: No abstract text available
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 QSD723 QSD724 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM
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QSD722
QSD723
QSD724
QSD722/723/724
DS300363
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BPW77NA
Abstract: No abstract text available
Text: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW77NA,
BPW77NB
BPW77
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW77NA
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VBPW77NB
Abstract: APPLICATION NOTE BpW77 BPW77NB Infrared phototransistor TO18
Text: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW77NA,
BPW77NB
BPW77
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
VBPW77NB
APPLICATION NOTE BpW77
BPW77NB
Infrared phototransistor TO18
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Untitled
Abstract: No abstract text available
Text: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW76A,
BPW76B
BPW76
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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vbpw77nb
Abstract: APPLICATION NOTE BpW77 BPW77NB BPW77NA BPW77
Text: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW77NA,
BPW77NB
BPW77
2002/95/EC
2002/96/EC
11-Mar-11
vbpw77nb
APPLICATION NOTE BpW77
BPW77NB
BPW77NA
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Untitled
Abstract: No abstract text available
Text: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW76A,
BPW76B
BPW76
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW76A,
BPW76B
2002/95/EC
2002/96/EC
BPW76
11-Mar-11
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VBPW77NB
Abstract: BPW77NA BPW77NB npn phototransistor APPLICATION NOTE BpW77 BPW77 phototransistor 600 nm Silicon NPN Phototransistor
Text: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW77NA,
BPW77NB
BPW77
2002/95/EC
2002/96/EC
18-Jul-08
VBPW77NB
BPW77NA
BPW77NB
npn phototransistor
APPLICATION NOTE BpW77
phototransistor 600 nm
Silicon NPN Phototransistor
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Rise time of photo transistor
Abstract: No abstract text available
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MDB 1. GENERAL DESCRIPTION The HI-T70MDB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with black epoxy encapsulation. With daylight filter the phototransistor is sensitive only to infrared rays.
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HI-T70MDB
HI-T70MDB
200Lux
2000Lux
Rise time of photo transistor
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