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    INGAAS APD PHOTODIODE APPLICATION NOTE Search Results

    INGAAS APD PHOTODIODE APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3079 Rochester Electronics LLC CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3059 Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3059-G Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    TCM3105NL Rochester Electronics LLC TCM3105NL - FSK Modem, PDIP16 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC AM79865 -Physical Data Transmitter Visit Rochester Electronics LLC Buy

    INGAAS APD PHOTODIODE APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    InGaas PIN photodiode, 1550 nec

    Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
    Text: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is


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    NR8360JP-BC NR8360JP-BC 14-PIN InGaas PIN photodiode, 1550 nec APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application PDF

    lidar apd model

    Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
    Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.


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    ED-13, ED-0017/03/8, C30902E/S, C30921 lidar apd model APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode PDF

    FU-319SPA-CV6

    Abstract: 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.


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    FU-319SPA-CV6 FU-319SPA-CV6 -33dBm OC-48, STM-16) 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz PDF

    photodiode Avalanche photodiode

    Abstract: InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note FU-319SPA-CV6 459b STM-16 TZ7-99-459B mitsubishi APD APD, applications, bias supply
    Text: TZ7-99-459B 2/4 MITSUBISHI (OPTICAL DEVICES) FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.


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    TZ7-99-459B FU-319SPA-CV6 FU-319SPA-CV6 -33dBm OC-48, STM-16) 86GHz, photodiode Avalanche photodiode InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note 459b STM-16 mitsubishi APD APD, applications, bias supply PDF

    InGaAs apd photodiode

    Abstract: photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 iim AND 1.55 |im WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication


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    FU-319SPA-C6 FU-319SPP-C6 -33dBm OC-48, STM-16) bS4102T InGaAs apd photodiode photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber PDF

    InGaAs apd photodiode

    Abstract: photodiode Avalanche photodiode photodiode preamplifier AGC APD, applications, power supply APD Ghz FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi APD APD for fiber test
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication


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    FU-319SPA-C6 FU-319SPP-C6 -33dBm OC-48, STM-16) InGaAs apd photodiode photodiode Avalanche photodiode photodiode preamplifier AGC APD, applications, power supply APD Ghz FU-319SPA-C6 STM-16 mitsubishi APD APD for fiber test PDF

    Untitled

    Abstract: No abstract text available
    Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The


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    264-339757-VAR 264-339757-VAR 12-lead 1000-1600nm 200um Opto757-VAR PDF

    InGaAs Epitaxx APD

    Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
    Text: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions


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    1E-10 InGaAs Epitaxx APD EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver PDF

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


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    Selection guide

    Abstract: No abstract text available
    Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high


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    KIRD0005E02 Selection guide PDF

    6M20

    Abstract: InGaAs apd photodiode photodiode Avalanche photodiode APD FOR POWER G photodiode Avalanche photodiode mitsubishi APD 132A-1 132a-3 5pin connector FU-319SPA-6M20 FU-319SPA-V6M20
    Text: TZ7-02-132A 1/4 27.February.2002 Approved Charged KISHIDA Approved Customer Approval Specification proposal (2.5Gbps. APD Preamp Module Vcc=+3.3V) FU-319SPA-6M20/V6M20/W6M20 PRELIMINARY MITSUBISHI ELECTRIC CORP. A B x Date 1.Mar.’02 C D Approved H.Kiyosue


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    TZ7-02-132A FU-319SPA-6M20/V6M20/W6M20 FU-319SPA-6M20/V6M20/W6M20 FU-319SPA-V6M20 FU-319SPA-W6M20 FU-319SPA- 6M20 InGaAs apd photodiode photodiode Avalanche photodiode APD FOR POWER G photodiode Avalanche photodiode mitsubishi APD 132A-1 132a-3 5pin connector FU-319SPA-6M20 FU-319SPA-V6M20 PDF

    InGaAs Epitaxx APD

    Abstract: avalanche photodiodes InGaas APD detector, 1550 sensitivity epitaxx APD photovoltaic receiver 1550 InGaAs apd photodiode Si apd photodiode 10 gb APD receiver apd 1550 rise time, dark, capacitance EPITAXX erm 577
    Text: Erik Jonsson School of Engineering & Computer Science The University of Texas at Dallas OPTICAL DETECTORS AND RECEIVERS Notes prepared for EE 6310 by Professor Cyrus D. Cantrell August–December 2003 c C. D. Cantrell 06/2003 The University of Texas at Dallas


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    ERM547

    Abstract: JDSU Transponder apd receiver 10 gb APD receiver JDSU ERM jdsu apd avalanche photodiode ingaas ghz Photodiode apd high sensitivity jdsu avalanche photodiode jds uniphase receiver
    Text: Product Bulletin 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module ERM 537/547 The JDS Uniphase ERM 537/547 series consists of small form factor SFF 2.5 Gb/s SONET/ SDH optical receivers with InGaAs PIN or avalanche photodiodes and high bandwidth linear transimpedance amplifiers. They are


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    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


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    CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    InGaAs apd photodiode

    Abstract: FU-318SAP series photodiode Avalanche photodiode mitsubishi APD Photodiode apd FU-318AP-M6 FU-318SAP-M6 avalanche photodiode ingaas ghz
    Text: MITSUBISHI OPTICAL DEVICES FU-318AP-M6/FU-318SAP-M6 InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION Th e FU-318AP-M6 /318SAP-M6 series avalanche photodiode(APD) modules are designed for use in fib er testing equipment and high-speed, long haul optical communication systems.


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    FU-318AP-M6/FU-318SAP-M6 FU-318AP-M6 /318SAP-M6 1300nm) FU-318SAP-M6 InGaAs apd photodiode FU-318SAP series photodiode Avalanche photodiode mitsubishi APD Photodiode apd FU-318SAP-M6 avalanche photodiode ingaas ghz PDF

    IAG 080

    Abstract: photodiode ingaas ghz
    Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited


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    TAP4NN3

    Abstract: ITU-T G.651 Analog Photodiode, 1550nm, TBP4NN3 PIN photodiode responsivity 1550nm 1.1 G651 photodiode 1550nm pigtailed 1550nm photodiode 5 Ghz PIN photodiode 5ghz pigtailed
    Text: Pigtailed PD for analog application TAP4NN3 series Long wavelength InGaAs PIN-PD Detection wavelength range of 1.1µm to 1.6µm SMF or MMF Pigtailed SC, FC, ST, or LC Connector Family Model TAP4NN3 TZP4NN3 TBP4NN3 Features InGaAs long wavelength PIN photodiode


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    1310nm 1550nm 25Gbps 125Gbps DS-TP-110-Rev01 TAP4NN3 ITU-T G.651 Analog Photodiode, 1550nm, TBP4NN3 PIN photodiode responsivity 1550nm 1.1 G651 photodiode 1550nm pigtailed 1550nm photodiode 5 Ghz PIN photodiode 5ghz pigtailed PDF

    Selection guide

    Abstract: United Detector Technology PSD
    Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable


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    KACC0001E02 Selection guide United Detector Technology PSD PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI OPTICAL DEVICES FU-318AP-M6/FU-318SAP-M6 InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION The FU-318AP-M6/318SAP-M6 series avalanche photodiode(APD) modules are designed for use in fiber testing equipment and high-speed, long haul optical communication systems.


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    FU-318AP-M6/FU-318SAP-M6 FU-318AP-M6/318SAP-M6 1300nm) FU-318AP-M6 FU-318SAP-M8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited


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    IAG 080

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


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    Sensors PSD

    Abstract: No abstract text available
    Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches


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    16-element C9004) KACCC0426EB Sensors PSD PDF

    mitsubishi APD

    Abstract: Photodiode apd "InGaAs APD" InGaAs Photodiode 1550nm apd 2.5 g 1550nm apd 1300nm
    Text: • G01Û35T GT b ■ MITSUBISHI OPTICAL DEVICES FU-318AP/FU-318SAP InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FEATURES The FU-318AP/318SAP series avalanche photodiode • Low-dark current (3nA) (APD) modules are designed fo r use in fibe r testing


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    FU-318AP/FU-318SAP FU-318AP/318SAP 1300nm) FU-318SAP FU-318AP 00l03t mitsubishi APD Photodiode apd "InGaAs APD" InGaAs Photodiode 1550nm apd 2.5 g 1550nm apd 1300nm PDF

    Untitled

    Abstract: No abstract text available
    Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited


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    PDF