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    INGAAS PHOTODIODE OPERATING TEMPERATURE RANG Search Results

    INGAAS PHOTODIODE OPERATING TEMPERATURE RANG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    INGAAS PHOTODIODE OPERATING TEMPERATURE RANG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PIN photodiode 500 nm

    Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
    Text: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with


    Original     		GFD1300-550 temperature-10 GFD1300-550 FIBER54 PIN photodiode 500 nm Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5Gbps InGaAs PIN Photodiode Module 2.5Gbps InGaAs PIN Photodiode Module Features • • • • • • High Responsivity High speed, typical 2.5GHz Low dark current, typical 0.1nA Low capacitance, typical 0.7pF Operating temperature range -40°C to 85°C


    Original     		100cm 9/125um 50/125um 5/125um PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN Photodiode Module InGaAs PIN Photodiode Module Features • High Responsivity • High speed, typical 2 GHz • Low dark current, < 1nA • Low capacitance, typical 0.7pF • Operating temperature range -40°C to 85°C • Hermetically sealed TO-18 package in pigtailed or


    Original     		1310nm) 100cm 9/125um 50/125um 5/125um PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5 GHz InGaAs PIN Photodiode Module InGaAs PIN Photodiode Module Features • • • • • • High Responsivity High speed, typical 1.5 GHz Low dark current, < 1nA Low capacitance, typical 0.7pF Operating temperature range -40°C to 85°C Hermetically sealed TO-18 package in pigtailed or


    Original     		1310nm) 100cm 9/125um 50/125um 5/125um PDF

    PIN Photodiode 1550nm

    Abstract: PIN photodiode 1310 1310nm photodiode 1550nm photodiode 3,8 Ghz PIN photodiode responsivity 1550nm 2,5 GHz InGaAs Photodiode 1550nm
    Text: InGaAs PIN Photodiode Modules R-11-300-X-XXX-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40~85ºC operating temperature • Hermetically sealed 3-pin metal case Packaging


    Original     		R-11-300-X-XXX-XX 1310nm 1550nm LUMNDS539-MAR2007 PIN Photodiode 1550nm PIN photodiode 1310 1310nm photodiode 1550nm photodiode 3,8 Ghz PIN photodiode responsivity 1550nm 2,5 GHz InGaAs Photodiode 1550nm PDF

    pin Photodiode 1300 nm

    Abstract: PIN photodiode 500 nm photodiode esd sensitivity GFD1300-550 pin photodiode InGaAs sensitivity InGaas PIN photodiode Photodiode photodiode amplifier PIN photodiode 300 nm photodiode PIN 1300
    Text: 02 February 1998 GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION


    Original     		GFD1300-550 temperature-10 GFD1300-550 FIBER54 pin Photodiode 1300 nm PIN photodiode 500 nm photodiode esd sensitivity pin photodiode InGaAs sensitivity InGaas PIN photodiode Photodiode photodiode amplifier PIN photodiode 300 nm photodiode PIN 1300 PDF

    InGaAs Photodiode 1550nm

    Abstract: photodiode eyes response Luminent photodiode
    Text: InGaAs PIN Photodiode Modules R-11-055-P/R-xxx Features • InGaAs/InP PIN Photodiode • Sensitive receiver at 1310 nm and 1550nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case


    Original     		R-11-055-P/R-xxx 1550nm LUMNDS538-0703 InGaAs Photodiode 1550nm photodiode eyes response Luminent photodiode PDF

    laser diode 3pin

    Abstract: pin photodiode 10 ghz PIN Photodiode 1550nm photodiode eyes response InGaAs Photodiode 1550nm
    Text: InGaAs PIN Photodiode Modules PDR-C3-AXSTAN-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40 to +85ºC operating temperature • Hermetically sealed 3-pin metal case • ST receptacle package


    Original     		1310nm 1550nm LUMNDS803-MAR0306 laser diode 3pin pin photodiode 10 ghz PIN Photodiode 1550nm photodiode eyes response InGaAs Photodiode 1550nm PDF

    InGaas PIN photodiode, 1550

    Abstract: InGaAs photodiode 1310 1550 PIN Photodiode 4 Ghz 1550 nm PHOTODIODE PD 20
    Text: InGaAs PIN Photodiode Modules R-11-300-R/R-xxx Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case


    Original     		R-11-300-R/R-xxx LUMNDS539-0703 InGaas PIN photodiode, 1550 InGaAs photodiode 1310 1550 PIN Photodiode 4 Ghz 1550 nm PHOTODIODE PD 20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Large Area InGaAs PIN Photodiode Module Large Area InGaAs PIN Photodiode Module Features • High Responsivity • Low dark current, typ. <1nA • Operating temperature range -40°C to 85°C • Hermetically sealed TO-18 package in pigtailed or receptacle housing with FC, ST, SC, LC, MU or SMA


    Original     		850nm 1300nm 1550nm 100cm 9/125um 50/125um 5/125um PDF

    Untitled

    Abstract: No abstract text available
    Text: G FD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/pW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10°C to +65°C OUTLINE DIMENSIONS in inches mm


    OCR Scan     		FD1300-550 temperature-10Â GFD1300-550 FIBER54 GFD1300-550 PDF

    InGaAs Photodiode 1550nm

    Abstract: R-11-075X-X-XXX-X-XX
    Text: InGaAs PIN Photodiode Modules R-11-075X-X-XXX-X-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40 to +85ºC operating temperature • Hermetically sealed 3-pin metal case


    Original     		R-11-075X-X-XXX-X-XX 1310nm 1550nm LUMNDS540-NOV1605 InGaAs Photodiode 1550nm R-11-075X-X-XXX-X-XX PDF

    InGaAs Photodiode 1550nm

    Abstract: No abstract text available
    Text: InGaAs PIN Photodiode Modules R-11-055-X-XXX-X-XX Features • InGaAs/InP PIN Photodiode • Sensitive receiver at 1310nm and 1550nm • Low dark current • Fast pulse response • -40~85ºC operating temperature • Hermetically sealed 3-pin metal case Packaging


    Original     		R-11-055-X-XXX-X-XX 1310nm 1550nm LUMNDS538-SEP2807 InGaAs Photodiode 1550nm PDF

    InGaas PIN photodiode

    Abstract: InGaAs Photodiode 1550nm R-11-075B-R-SFC
    Text: P/N: R-11-075X-X-XXX-X-XX InGaAs PIN Photodiode Modules Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310m and 1550nm Low dark current Fast pulse response -40~85°C operating temperature Hermetically sealed 3-pin metal case Packaging


    Original     		R-11-075X-X-XXX-X-XX 1310m 1550nm 9/125m 50/125m 5/125m DS-5838 InGaas PIN photodiode InGaAs Photodiode 1550nm R-11-075B-R-SFC PDF

    R-11-075-P-M

    Abstract: R-11-075-P-MFC R-11-075-P-MSC R-11-075-P-MST R-11-075-P-S R-11-075-P-SFC R-11-075-P-SST R-11-075-R-SFC R-11-075-R-SSC R-11-075-R-SST
    Text: InGaAs PIN Photodiode Modules R-11-075-R/P-xxx Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • FC/ST/SC receptacle package


    Original     		R-11-075-R/P-xxx 1550nm LUMNDS540-0703 R-11-075-P-M R-11-075-P-MFC R-11-075-P-MSC R-11-075-P-MST R-11-075-P-S R-11-075-P-SFC R-11-075-P-SST R-11-075-R-SFC R-11-075-R-SSC R-11-075-R-SST PDF

    1500-nm

    Abstract: No abstract text available
    Text: SFH 2224 TERNARY PIN PHOTODIODE MM FIBER PIGTAIL Preliminary Data Sheet FEATURES Maximum Ratings * InGaAs/lnP PIN Photodiode Operating and Storage Temperature Range TOP, Tst(j .-4 0 ° to +B5°C Soldering Temperature (2 mm from case bottom), (Ts) I m^ I O s .260°C


    OCR Scan     		SFH2223 1300nm, 1500-nm PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN Photodiode R-11-XXX-G-A B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm


    Original     		R-11-XXX-G-A R-11-040-G-A LUMNDS008-OCT1504 PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN Photodiode R-11-XXX-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm


    Original     		R-11-XXX-G-B R-11-040-G-B LUMNDS564-OCT1504 PDF

    Photodiode 1310

    Abstract: InGaAs photodiode TO-46 R-11-055-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B 10 gb laser photodiode TO46 package R1105
    Text: InGaAs PIN Photodiode R-11-xxx-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 55, 75,100 or 300 µm


    Original     		R-11-xxx-G-B LUMNDS564-MAR1804 Photodiode 1310 InGaAs photodiode TO-46 R-11-055-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B 10 gb laser photodiode TO46 package R1105 PDF

    R-11-075-R-SSC

    Abstract: R-11-075-P-SSC R-11-075-P-SFC R-11-075-P-MFC R-11-075-P-MST R-11-075-P-S R-11-075-P-SST R-11-075-R-SFC R-11-075-R-SST InGaAs photodiode 1310 1550
    Text: InGaAs PIN Photodiode Modules R-11-075-R-SFC/ SC/ ST • R-11-075-P-SFC/ SC/ ST Features • InGaAs/ InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to +85ºC operating temperature • Hermetically sealed 3-pin metal case


    Original     		R-11-075-R-SFC/ R-11-075-P-SFC/ 110such LUMNDS080-0302 R-11-075-R-SSC R-11-075-P-SSC R-11-075-P-SFC R-11-075-P-MFC R-11-075-P-MST R-11-075-P-S R-11-075-P-SST R-11-075-R-SFC R-11-075-R-SST InGaAs photodiode 1310 1550 PDF

    LIGHT LASER DIODE SAMSUNG

    Abstract: Pmon18
    Text: 1 Technical Data Sheet June 2002 FIBEROPTICS DIVISION TR114LA 155Mbps 1310nm LC Duplex Single Mode Transceiver Features 1.3µm InGaAsP MQW Fabry-Perot laser Highly sensitive InGaAs PIN photodiode Operating temperature range Extended Temperature : -45~85 oC


    Original     		TR114LA 155Mbps 1310nm TR114LA-0D30S TR114LB-0D30S TR114LA-0D40S TR114LB-0D40S LIGHT LASER DIODE SAMSUNG Pmon18 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 Technical Data Sheet June 2002 FIBEROPTICS DIVISION TR133LA 622Mbps 1310nm LC Duplex Single Mode Transceiver Features 1.3µm InGaAsP MQW Fabry-Perot laser Highly sensitive InGaAs PIN photodiode Operating temperature range Extended Temperature : -45~85 oC.


    Original     		TR133LA 622Mbps 1310nm OC-12 TR133LA-0D30S TR133LB-0D30S PDF

    samsung emi* filter

    Abstract: transmitter receiver circuit diagram
    Text: 1 Technical Data Sheet June 2002 FIBEROPTICS DIVISION TR134LA 622Mbps 1310nm LC Duplex Single Mode Transceiver Features 1.3µm InGaAsP MQW Fabry-Perot laser Highly sensitive InGaAs PIN photodiode Operating temperature range Extended Temperature : -45~85 oC.


    Original     		TR134LA 622Mbps 1310nm OC-12 TR134LA-0D30S TR134LB-0D30S samsung emi* filter transmitter receiver circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN Photodiode R-11-XXX-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm


    Original     		R-11-XXX-G-B R-11-040-G-B LUMNDS792-OCT1504 PDF