NX7526BF-AA
Abstract: NX7526BF-AA-AZ
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well
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NX7526BF-AA
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nec 501 t
Abstract: NX8563LA NX8563LA-AZ NX8563LAS
Text: DATA SHEET NEC's DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS NX8563LA Series FEATURES DESCRIPTION • PEAK OUTPUT POWER NEC's NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser
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NX8563LA
NX8563LA
14-PIN
nec 501 t
NX8563LA-AZ
NX8563LAS
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GR-468-CORE
Abstract: NX7313UA NX7313UA-AZ
Text: NEC's 1310 nm InGaAsP MQW FP TOSA NX7313UA FOR GIGABIT ETHERNET APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7313UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter optical subassembly (TOSA) with InGaAs monitor PIN-PD in a receptacle type package designed for LC type SFF/SFP transceiver
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NX7313UA
NX7313UA
GR-468-CORE
GR-468-CORE
NX7313UA-AZ
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NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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NX7527BF-AA
Abstract: NX7527BF-AA-AZ
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 120 mW MIN NX7527BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW at IFP = 1000 mA, NEC's NX7527BF-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate
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NX7527BF-AA
NX7527BF-AA
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LD connector SC
Abstract: NX8501 NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501BC-BA NX8501BC-CA NX8501CC NX8501CC-BA
Text: 1510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE NX8501 SERIES FEATURES DESCRIPTION • PEAK WAVELENGTH: λP = 1510 nm The NX8501 Series is a 1510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The
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NX8501
NX8501
TA-NWT-000983
SMF-28
24-Hour
LD connector SC
NX8501AC
NX8501AC-BA
NX8501AC-CA
NX8501BC
NX8501BC-BA
NX8501BC-CA
NX8501CC
NX8501CC-BA
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NX6506
Abstract: NX6506GH NX6506GH-AZ NX6506GK NX6506GK-AZ
Text: NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A • SIDE MODE SUPPRESSION RATIO:
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NX6506
NX6506GH
NX6506GH-AZ
NX6506GK
NX6506GK-AZ
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NX7328BF-AA
Abstract: NX7328BF-AA-AZ
Text: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well
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TOSA MQW Laser diode SFP
Abstract: GR-468-CORE NX7315UA NX7315UA-AZ STM-16
Text: PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP TOSA NX7315UA FOR 2.5 Gb/s INTRA-OFFICE APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7315UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter
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NX7315UA
NX7315UA
STM-16
OC-48
TOSA MQW Laser diode SFP
GR-468-CORE
NX7315UA-AZ
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NX8508
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS NX8508 Series FEATURES • INTERNAL OPTICAL ISOLATOR • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm Based on CWDM • OPTICAL OUTPUT POWER
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NX8508
NX8508
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NX8562-AZ
Abstract: NX8562LB NX8562LF 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE NX8562 FOR DWDM APPLICATIONS SERIES 20 mW MIN FEATURES DESCRIPTION • AVAILABLE FOR DWDM WAVELENGTHS BASED ON ITU-T RECOMMENDATIONS (100 GHz grid) refer to the Ordering Information • OUTPUT POWER: Pf = 20 mW MIN
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NX8562
NX8562
NX8562-AZ
NX8562LB
NX8562LF
160832
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1480 nm diode laser
Abstract: NX7461LE NX7461LE-BA NX7461LE-CA NX8562LB 1480 nm laser diode
Text: 1480 nm EDFA APPLICATION InGaAsP STRAINED MQW-DC-PBH LASER DIODE MODULE NX7461LE FEATURES DESCRIPTION • InGaAsP STRAINED MQW DC-PBH LASER DIODE • HIGH OUTPUT POWER: Pf = 150 mW MIN @ IF = 600 mA CW The NX7461LE is a 1480 nm pumping laser diode module with
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NX7461LE
NX7461LE
14-PIN
24-Hour
1480 nm diode laser
NX7461LE-BA
NX7461LE-CA
NX8562LB
1480 nm laser diode
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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NX5522
R08DS0029EJ0100
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GR-468-CORE
Abstract: NX7312UA NX7312UA-AZ
Text: NEC's 1310 nm InGaAsP MQW FP TOSA FOR SHORT HAUL 155 Mb/s and 622 Mb/s APPLICATIONS NX7312UA FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.2 mW NEC's NX7312UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter
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NX7312UA
OC-12
GR-468-CORE
NX7312UA-AZ
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10 gb laser diode
Abstract: Hitachi DSA0095 HL1511AF diode hitachi
Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1511AF
10Gb/s
ADE-208-1405
HL1511AF
HL1511AF:
10 gb laser diode
Hitachi DSA0095
diode hitachi
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FU-427SLD-F1M54
Abstract: F1M54
Text: WZ700060B 1/4 MITSUBISHI (OPTICAL DEVICES) FU-427SLD-F1M54 1.31 µm FP-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-427SLD-F1M54 has been developed for coupling a singlemode optical fiber and a 1.3µm wavelength InGaAsP LD (Laser diode).
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FU-427SLD-F1M54
FU-427SLD-F1M54
F1M54
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Untitled
Abstract: No abstract text available
Text: 1.29 ÷ 1.33 !m CW output power > 2.0 mW LFO-14/2-ip Description: LFO-14/2-ip – is a series of optical modules based on Mitsubishi 1310nm MQW InGaAsP/InP Fabry-Perot laser diode and coupled with singlemode optical fiber. Hermetically sealed modules are performed in standard coaxial package with built-in InGaAs monitor photodiode and collimating
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LFO-14/2-ip
1310nm
622Mb/s)
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NX8501
Abstract: NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC
Text: DATA SHEET LASER DIODE NX8501 Series 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation
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NX8501
TA-NWT-000983
NX8501AC
NX8501AC-BA
NX8501AC-CA
NX8501BC
NX8501CC
25TC
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 4413 LOW POW ER LA SE R D IO D E IN T018 PA CKA G E Package Dimensions in mm FEATU R ES Maximum Ratings * InGaAsP/lnP MCRW-Laser Diode Output power ratings refer to the totalemittedpower at frontwindow. The operating temperature of thesubmount isidentical with the case
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SFH4413
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SFH4423
Abstract: No abstract text available
Text: SIEMENS SFH 4423/4424 LOW POWER LASERDIODE SM FIBER PIGTAIL FEATURES • InGaAsP/lnP MCRW Laserdiode • 10/125 nm Single Mode Pigtail M axim um R ating s Output power ratings refer to the fiber output. The operating temperature of the submount is identical with the case
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SFH4423/4424
SFH4423
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laser light source
Abstract: LASER 3mW LN7301S 15-30mA
Text: Panasonic Semiconductor Laser LN7301S 1.3|im Band InGaAsP Semiconductor Laser Light source for optical fiber communications • Features • Low threshold current • High-efficiency • High-speed response • Built in PIN photodiode used for radiant power monitor
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LN7301S
laser light source
LASER 3mW
LN7301S
15-30mA
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Untitled
Abstract: No abstract text available
Text: HL1362A/AC InGaAsP Laser Diodes HITACHI Description The HL1362A/AC are 1.3 |_im InGaAsP A/4 phase-shifted distributed-feedback laser diodes DFB-LDs . They are suitable as light sources for high-bit-rate, long-haul fiberoptic communication systems and other
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HL1362A/AC
HL1362A/AC
48832Gbps
40mAp-p
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Untitled
Abstract: No abstract text available
Text: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
HL1566AFndicular)
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Untitled
Abstract: No abstract text available
Text: blE D • QGm b bf l NITSUBISHI «HITS MITSUBISHI LASER DIODES ML9XX1 SERIES D IS CR ET E SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION ML9XX1 FEATURES series are InGaAsP laser diodes which • Stable fundam ental transverse mode oscillation provide a stable, single transverse mode oscillation
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1550nm
ML9701,
ML974A1F)
L9911,
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