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Abstract: No abstract text available
Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features Matching Applied GaAs HBT Typical Gmax, OIP3, P1dB @ 5V,270mA GaAs MESFET 23 21 Si BiCMOS GaAs pHEMT Si CMOS 38 17 13 11 Si BJT 7 5 InP HBT
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SGA9289Z
OT-89
SGA9289Z
DS140313
SGA9289ZSQ
SGA9289ZSR
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HBT 01 05G
Abstract: trans-impendance CH-6805 HRXM40A 10 gb PIN receiver
Text: HRXM40A 40 Gb/s Optical Receiver REV 09/01 Features InGaAs-pin-photodiode with InP-HBT-preamplifier Bitrates up to 40 Gb/s 14-pin butterfly module with k-connector, SMF pigtail Low power consumption Product Description HRXM40A modules are high-speed fiber-optical receivers
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HRXM40A
14-pin
HRXM40A
CH-6805
HBT 01 05G
trans-impendance
10 gb PIN receiver
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HBT 01 05G
Abstract: InP HBT transistor HRXC40A inp transistor CH-6805
Text: HRXC40A 40 Gb/s Optical Receiver REV 09/01 Features InGaAs-pin-photodiode with InP-HBT-preamplifier High bandwidth Bitrates up to 40 Gb/s Low power consumption Product Description HRXC40A chips are high-speed fiber-optical receivers for high-capacity fiber-optical communication networks with
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HRXC40A
HRXC40A
CH-6805
HBT 01 05G
InP HBT transistor
inp transistor
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SFT-9100
Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9200B
50GHz
SFT-9200B
43Gb/s
40GbE,
100GbE
SFT-9100
InP transistor HEMT
sft 43
Sft9100
9200B
InP HEMT transistor at 50ghz
inp hemt low noise amplifier
InP HBT transistor
mesfet low noise
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60GHz transistor
Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Text: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9400B
60GHz
SFT-9400B
43Gb/s
40GbE,
100GbE
50GHz
60GHz transistor
InP transistor HEMT
SFT9400B
OC-768
98T2
InP HBT transistor low noise
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Untitled
Abstract: No abstract text available
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089Z
SBF5089ZDC
500MHz,
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF5089ZSR
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SBF-5089Z
Abstract: InP transistor HEMT InP HBT transistor low noise
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089ZDC
500MHz,
SBF5089Z
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF-5089Z
InP transistor HEMT
InP HBT transistor low noise
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CGY2108GS
Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services
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500MHz
160GHz
CGY2108GS
D01GH
D01MH
CGY2191UH/C2
D01PH
ED02AH
CGY2190UH/C2
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LQH1C4R7M04
Abstract: MAX1958 MAX1958ETP MAX1959 MAX1959ETP Nippon capacitors
Text: 19-2659; Rev 0; 10/02 KIT ATION EVALU E L B A IL AVA W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs The MAX1958/MAX1959 power amplifier PA powermanagement ICs (PMICs) integrate an 800mA, dynamically adjustable step-down converter, a 5mA Rail-toRail operational amplifier (op amp), and a precision
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MAX1958/MAX1959
800mA,
800mA.
MAX1958)
MAX1959)
MO220.
LQH1C4R7M04
MAX1958
MAX1958ETP
MAX1959
MAX1959ETP
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: 19-2659; Rev 0; 10/02 KIT ATION EVALU E L B A IL AVA W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs The MAX1958/MAX1959 power amplifier PA powermanagement ICs (PMICs) integrate an 800mA, dynamically adjustable step-down converter, a 5mA Rail-toRail operational amplifier (op amp), and a precision
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MAX1958/MAX1959
800mA,
800mA.
MAX1958)
MAX1959)
MO220.
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SGA-1263
Abstract: SGA-1263Z BY 356
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
EDS-100935
SGA-1263
SGA-1263Z
BY 356
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trace code marking RFMD
Abstract: SGA-1263 SGA-1263Z
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
trace code marking RFMD
SGA-1263Z
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Untitled
Abstract: No abstract text available
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS111011
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SGA1263Z
Abstract: SGA1263
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
SGA1263Z
DCto4000MHz
OT-363
50GHz
DS111011
SGA1263
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SGA-1263Z
Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain
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SGA1263Z
DCto4000MH
DCto4000MHz
OT-363
SGA1263Z
50GHz
DS100916
SGA-1263Z
SGA1263ZSQ
trace code marking RFMD
InP HBT transistor
PHEMT marking code a
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Untitled
Abstract: No abstract text available
Text: SGA9089Z S G 9 Hi g HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHz to 4.0GHz. The SGA9089Z is optimized for 3V operation. The
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SGA9089Z
OT-89
SGA9089Z
50MHz
44GHz
170mA
DS140312
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SGA-9089Z
Abstract: InP HBT transistor low noise
Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA-9089Z
OT-89
SGA-9089Z
50MHz
170mA
EDS-105051
SGA9089Z"
InP HBT transistor low noise
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Transistor TL 31 AC
Abstract: j142
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
OT-89
SGA9089Z
50MHz
44GHz
170mA
DS110606
Transistor TL 31 AC
j142
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SiGe POWER TRANSISTOR
Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
SGA9089Z
OT-89
50MHz
05GHz
44GHz
SiGe POWER TRANSISTOR
Gan hemt transistor RFMD
InP HBT transistor low noise
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Untitled
Abstract: No abstract text available
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
OT-89
SGA9089Z
50MHz
05GHz
44GHz
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Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD3000
FPD30002W
47mmx0
FPD3000
mx3000Î
12GHz
42dBm
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SBA-5086
Abstract: BA5 Amplifier sba-5086z sba5086z
Text: SBA-5086 Z SBA-5086(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-86 Product Description Features RFMD’s SBA-5086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5086
OT-86
SBA-5086
SBA-5086Z
EDS-102742
BA5 Amplifier
sba-5086z
sba5086z
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Untitled
Abstract: No abstract text available
Text: SBA4086Z SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to
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SBA4086Z
OT-86
SBA4086Z
SBA4086ZSQ
SBA4086ZPCK1
SBA4086ZSR
850MHz,
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Untitled
Abstract: No abstract text available
Text: SBA5086Z SBA5086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMD’s SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA5086Z
OT-86
SBA5086Z
SBA5086ZSQ
SBA5086ZPCK1
SBA5086ZSR
850MHz,
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