Power MOSFET Switching Waveforms A New Insight
Abstract: jfet cascode IRF130 AN-7506 vertical JFET intersil jfet mosfet SPICE MODEL
Text: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note Title N86 bt pic-Up ce Softre r wer OST odel utho eyrds terrpoon, minctor, er ) OCI O frk The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated
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Abstract: No abstract text available
Text: Intersil High-Rellabllity Products IH6201 High Reliability Dual CMOS Driver/Voltage Translator GENERAL DESCRIPTION FEATURES The IH6201 is a CMOS, Monolithic, Dual Voltage Transla tor; it takes low level TTL or CMOS logic signals and con verts them to higher levels i.e. to ± 15V swings . This trans
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IH6201
IH6201
IH401
22Vpp
20MHz
200ns
2N4391)
IH6201,
IH401,
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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isl28210
Abstract: AN1594 SMD diode J6 ISL28210SOICEVAL1Z SMD diode r14 DNP-12 smd jfet
Text: Application Note 1594 ISL28210SOICEVAL1Z Evaluation Board User’s Guide Introduction Power Supplies Figure 1 The ISL28210SOICEVAL1Z evaluation board is designed to evaluate the performance of the ISL28210 Precision Low Noise JFET Operational Amplifier. The ISL28210 is a
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ISL28210SOICEVAL1Z
ISL28210
AN1594
SMD diode J6
SMD diode r14
DNP-12
smd jfet
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ISL28110
Abstract: ISL28210 ISL28210FBZ ISL28110FBZ GG16 JFET 50ma -40v
Text: ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are important. The combination of
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ISL28110,
ISL28210
ISL28210,
5m-1994.
MS-012.
FN6639
ISL28110
ISL28210
ISL28210FBZ
ISL28110FBZ
GG16
JFET 50ma -40v
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2N5018
Abstract: No abstract text available
Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE TO-18 TOP VIEW 75Ω LOW ON RESISTANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 S Maximum Temperatures Storage Temperature -55 to 150°C
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2N5018
2N5018
500mW
-10mA
25-year-old,
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HA-5170
Abstract: AN540 HA2-5170-5 HA7-5170-5
Text: HA-5170 Data Sheet September 1998 File Number 2912.3 8MHz, Precision, JFET Input Operational Amplifier Features The Intersil HA-5170 is a precision, JFET input, operational amplifier which features low noise, low offset voltage and low offset voltage drift. Constructed using FET/Bipolar
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HA-5170
HA-5170
AN540
HA2-5170-5
HA7-5170-5
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5170
Abstract: HA7-5170-5 ha-5170 AN540 TB379
Text: HA-5170 TM Data Sheet July 2000 File Number 2912.4 8MHz, Precision, JFET Input Operational Amplifier Features The Intersil HA-5170 is a precision, JFET input, operational amplifier which features low noise, low offset voltage and low offset voltage drift. Constructed using FET/Bipolar
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HA-5170
HA-5170
5170
HA7-5170-5
AN540
TB379
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AN540
Abstract: HA-5170 HA7-5170-5 TB379 AN-540
Text: DU C T NT E PRO T E CE M E a t L A O L P E OBS R Center ND E D OMME ical Support .com/tsc C E R NO hn Data ersil ecSheet ww.int t o ur T contac TERSIL or w IN 1-888- HA-5170 November 2004 FN2912.5 8MHz, Precision, JFET Input Operational Amplifier Features
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HA-5170
FN2912
HA-5170
AN540
HA7-5170-5
TB379
AN-540
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Untitled
Abstract: No abstract text available
Text: Intersil Hlgh-Rellablllty Products DG180-191 High Relid|Sfffy High- Speed Driver 0 \ 3P ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog'jfates consist of g^s 2 or 4 N-channel junction-type field-effect transistors JFET
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DG180-191
DG180
DG191
DG186/187/188
DG189/190/191
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class d amplifier schematic hip4080
Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
class d amplifier schematic hip4080
HIP4080 amplifier circuit diagram class D
AN9404
AN9539
mosfet L 3055
1350P
AN9405
0-60V
MO-169AB
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HIP4080 amplifier circuit diagram class D
Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
HIP4080 amplifier circuit diagram class D
class d amplifier schematic hip4080
jfet normally off to220
mosfet L 3055
HIP4080
ITL5-1
dual jfet transistor array
AN9404
oscilloscope schematic EAS 200
Switching Power supply with HIP4080A
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lsk170
Abstract: No abstract text available
Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE f=1kHz en = 0.9NV/√HZ HIGH BREAKDOWN VOLTAGE BVGSS=40V max HIGH GAIN Yfs=22mS (typ) HIGH INPUT IMPEDENCE IG= -500pA max LOW CAPACITANCE 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
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LSK170
-500pA
2SK170
400mW
LSK389
25-year-old,
lsk170
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Untitled
Abstract: No abstract text available
Text: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85Ω LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures
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J/SST174
OT-23
350mW
-50mA
25-year-old,
SST174
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Untitled
Abstract: No abstract text available
Text: Application Note 1658 ISL28208SOICEVAL2Z Evaluation Board User’s Guide Introduction Power Supplies Figure 1 The ISL28208SOICEVAL2Z evaluation board is designed to evaluate the performance of the ISL28208 dual Operational Amplifier. The ISL28208 is a dual low power precision
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ISL28208SOICEVAL2Z
ISL28208
ISL28208
AN1658
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Untitled
Abstract: No abstract text available
Text: 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75Ω LOW ON RESISTANCE LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature
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2N5114
2N5114,
2N5115,
2N5116
500mW
-50mA
2N5114
25-year-old,
LS5114
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AN8610
Abstract: UF 407 Diode HIP2060AS1 HIP2060 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W
Text: HIP2060 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.
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HIP2060
HIP2060
AN8610
UF 407 Diode
HIP2060AS1
HIP2060AS2
HIP2060AS3
MO-169
12v class d amplifier 70W
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AN8610
Abstract: 12v class d amplifier 70W lambda IC 101 Switching Power supply with HIP4080A HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3 MO-169 ic 067b
Text: HIP2060 TM 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.
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HIP2060
HIP2060
1350P
5e-03
5e-08
150e-03
5950u)
15e-02
AN8610
12v class d amplifier 70W
lambda IC 101
Switching Power supply with HIP4080A
HIP2060AS1
HIP2060AS2
HIP2060AS3
MO-169
ic 067b
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8th order highpass butterworth filter
Abstract: CN-0127 AD8622 AN1556 100hz lowpass filter intersil application note an1548 ADA4062-2 AN1580 ISL28107
Text: Application Note 1580 Authors: Michael Steffes and Oscar Mansilla Testing Intersil's “Active Filter Designer” Gain and Q Sequencing Impact on Output Noise Introduction Intersil's Active Filter Designer is a simulation suite intended to accelerate a designer's progress towards a
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AD8622
ADA4062-2
CN-0127
AN1556
com/data/an/an1556
ISL28107,
ISL28207
FN6631
com/data/fn/fn6631
AN1580
8th order highpass butterworth filter
CN-0127
100hz lowpass filter
intersil application note
an1548
ISL28107
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hp5082-2810
Abstract: MARKING D53 HA-5160 uncompensated operational amplifier d54 marking 2N4416 HA2-5160-5
Text: HA-5160 Data Sheet November 30, 2005 FN2911.6 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier Features The HA-5160 is a wideband, uncompensated, operational amplifier with FET/Bipolar technologies and Dielectric Isolation. This monolithic amplifier features superior high
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HA-5160
FN2911
100MHz,
HA-5160
hp5082-2810
MARKING D53
uncompensated operational amplifier
d54 marking
2N4416
HA2-5160-5
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ISL223x4
Abstract: spo2 sensor SPO2 cable PR40-Precision-SOI ISL12057 body temperature sensor Zero Drift Amplifiers ISL22512 SPO2 ISL28210
Text: INTERSIL SELECTION GUIDE PRECISION Precision Op Amps, Precision Instrumentation Amplifiers, Precision Voltage References, Real Time Clocks, Switches/MUXes, Digital Potentiometers, Interface High-performance analog products: low-power, space-efficient solutions.
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D-85737
1-888-INTERSIL
LC-096
ISL223x4
spo2 sensor
SPO2 cable
PR40-Precision-SOI
ISL12057
body temperature sensor
Zero Drift Amplifiers
ISL22512
SPO2
ISL28210
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ICL8049CCJE
Abstract: antilog amplifier ICL4049BC ICL8048 ICL8049 ICL8049BCJE
Text: ICL8049 UCT NT ROD ACEME at P E r L T OLE REP rt Cente tsc / O BS E NDE D o p m p o MM nical Su tersil.c O C E h .in NO R our Tec or www t L c I a cont -INTERS 8 1-88 July 1999 Features Antilog Amplifier Description • Full Scale Accuracy . . . . . . . . . . . . . . . . . . . . . . . . . 0.5%
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ICL8049
ICL8049
ICL8049CCJE
antilog amplifier
ICL4049BC
ICL8048
ICL8049BCJE
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Sharp amplifier SM30
Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power
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-55oC
175oC.
Sharp amplifier SM30
Spice Model for TMOS Power MOSFETs
NMOS depletion pspice model
RFH75N05 datasheet
Spice 2 computer models for hexfets
RFH75N05
Hal Ronan
AN9210
TRANSFORMER ERL 35
VDMOS DEVICE
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LSK489
Abstract: No abstract text available
Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits • Reduced Noise due to process improvement Monolithic Design High slew rate
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LSK489
25-year-old,
LSK489
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