Untitled
Abstract: No abstract text available
Text: Intrinsic Safety Circuit Design Making instruments intrinsically safe need not seem like a nightmare. Here, the basics of intrinsic safety circuit design are discussed. Paul S. Babiarz Intrinsically Safe Apparatus Intrinsically Safe Applications % Switching
|
Original
|
Z-142
|
PDF
|
inductive proximity sensor transistor schematic
Abstract: schematic AC inductive proximity sensor INTRINSIC SAFE CIRCUIT SMB30S HP 9714 SMB30MM VOC sensor schematic DC inductive proximity sensor 27030 smicc-330
Text: SMI30 Series Intrinsically Safe Sensors Rugged, NEMA 6P-plus sensors in 30 mm threaded PBT barrel housings • • • • • • • Designed for use with approved amplifiers and intrinsically safe barriers in explosive environments SMI30 Series sensors, shown with Intrinsic Safety Kit
|
Original
|
SMI30
inductive proximity sensor transistor schematic
schematic AC inductive proximity sensor
INTRINSIC SAFE CIRCUIT
SMB30S
HP 9714
SMB30MM
VOC sensor
schematic DC inductive proximity sensor
27030
smicc-330
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INTRINSIC SAFETY HAZARDOUS AREA 3 INTRODUCTION Intrinsically safe equipment is defined as “equipment and wiring which is incapable of releasing sufficient electrical or thermal energy under normal or abnormal conditions to cause ignition of a specific hazardous
|
Original
|
ISA-RP12
K-104
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQAF22P10 FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area
|
OCR Scan
|
FQAF22P10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQA22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area
|
OCR Scan
|
FQA22P10
|
PDF
|
EN60079-11
Abstract: ATEX 2033 EN6007911 EN60079-1
Text: CNY65Exi www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, ATEX Certified FEATURES Top view A ± • ATEX certificate: PTB 03 ATEX 2033 U www.vishay.com/doc?85361 C • Suitable for intrinsic safe circuits for gas • Gas safety provision: II (1) G (EX ia) IIC
|
Original
|
CNY65Exi
EN60079-11
0303/DIN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
ATEX 2033
EN6007911
EN60079-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA6N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area
|
Original
|
FQA6N70
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area
|
Original
|
FQAF34N20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area
|
Original
|
FQPF6N50
O-220F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area
|
Original
|
FQPF6N25
O-220F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF5N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. • Extended Safe Operating Area
|
Original
|
FQPF5N20
O-220F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ. • Extended Safe Operating Area
|
Original
|
FQP8N25
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area
|
Original
|
FQP6N25
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP4N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. • Extended Safe Operating Area
|
Original
|
FQP4N50
O-220
|
PDF
|
|
|
FQP6N50
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area
|
Original
|
FQP6N50
O-220
FQP6N50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP4N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 7.0nC Typ. • Extended Safe Operating Area
|
Original
|
FQP4N20L
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area
|
Original
|
FQA16N25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA85N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 86nC Typ. • Extended Safe Operating Area
|
Original
|
FQA85N06
|
PDF
|
FQA34N20
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area
|
Original
|
FQA34N20
FQA34N20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area
|
Original
|
FQAF19N20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area
|
Original
|
FQP19N20
O-220
|
PDF
|
FQPF7N60
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area
|
Original
|
FQPF7N60
O-220F
FQPF7N60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area
|
Original
|
FQP16N25
O-220
|
PDF
|
FQP11N40
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. • Extended Safe Operating Area
|
Original
|
FQP11N40
O-220
FQP11N40
|
PDF
|
