IRL2203N equivalent
Abstract: C564 c562
Text: PD - 9.1378B International IOR Rectifier IRLI2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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OCR Scan
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1378B
IRLI2203N
O-220
C-563
C-564
IRL2203N equivalent
C564
c562
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Untitled
Abstract: No abstract text available
Text: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated
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OCR Scan
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IRF840LC
D-6380
0021b21
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pal 011
Abstract: Ultra High Voltage Hexfets Pal011 mosfet ir 250 n ne 555 diode
Text: PD-9.1070 International ioR Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated
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OCR Scan
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IRFBC40LC
po883)
0718t
pal 011
Ultra High Voltage Hexfets
Pal011
mosfet ir 250 n
ne 555 diode
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f7101
Abstract: MOSFET IRF7101 f-7101 MS-012AA
Text: SO-8 MS-012AA EXAMPLE: THIS IS AN IRF7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER
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OCR Scan
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MS-012AA)
IRF7101
F7101
f7101
MOSFET
IRF7101
f-7101
MS-012AA
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irf5305
Abstract: .C36 marking
Text: International IOR Rectifier PD 9.1385A PRELIMINARY IRF5305 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175PC Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -55V RDS on = 0.060
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OCR Scan
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IRF5305
O-220
----25V
irf5305
.C36 marking
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PDF
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IRF3205 equivalent
Abstract: No abstract text available
Text: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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OCR Scan
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IRFI3205
0D2454T
IRF3205 equivalent
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PDF
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irfp3710
Abstract: RFPE30
Text: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2
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OCR Scan
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IRFP3710
O-247
irfp3710
RFPE30
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IRLZ44N equivalent
Abstract: MARKING CODE 2B5
Text: PD -9.1498 International IOR Rectifier IRLIZ44N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated
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OCR Scan
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IRLIZ44N
O-220
IRLZ44N equivalent
MARKING CODE 2B5
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PDF
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IRL3705N
Abstract: No abstract text available
Text: P D - 9.1502 International IOR Rectifier IRL3705NS PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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OCR Scan
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IRL3705NS
package039)
IRL3705N
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PDF
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1RFP150
Abstract: 441D IRFP150
Text: International ior Rectifier PD-9.441D IRFP150 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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IRFP150
O-247
T0-220
O-218
1RFP150
441D
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SMD MARKING XL
Abstract: No abstract text available
Text: PD - 9.1380A International IOR Rectifier IRLL2705 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance V dss = 55V
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OCR Scan
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IRLL2705
OT-223
C-603
C-604
SMD MARKING XL
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PDF
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C536
Abstract: DIODE C536 IOR 536 C535 C538 C537 F C535 B C537 DIODE
Text: PD - 9.1323B International IOR Rectifier IRL3303S/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3303S Low-profile through-hole (IRL3303L) 175°C OperatingTemperature Fast Switching
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OCR Scan
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IRL3303S)
IRL3303L)
1323B
IRL3303S/L
C-538
C536
DIODE C536
IOR 536
C535
C538
C537 F
C535 B
C537 DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: I , .• I International PD 9.1402 PRELIMINARY IOR Rectifier IRFR/U5305 HEXFET Power MOSFET • • • • • • Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated
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OCR Scan
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IRFR/U5305
IRFR5305)
IRFU5305)
4B55452
QQ243b2
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5S45S
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi
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IRFY9240CM
-200Volt,
5545S
DD24541
5S45S
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Untitled
Abstract: No abstract text available
Text: 4655452 DQmSflM Q4R • INR PD-9.455D International ioR R ectifier _ IRC830 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC830
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smd diode GW
Abstract: diode ESM 315 K451
Text: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =
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OCR Scan
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IRF7523D1
Rf7523d1
smd diode GW
diode ESM 315
K451
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PDF
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1RF540
Abstract: IRF540S 1RF540S smd diode 2ba smd diode JD 103S AN-994 SMD-220 smd marking JD marking AI
Text: PD-9.898 International ioR Rectifier IRF540S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Description
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OCR Scan
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IRF540S
SMD-220
50KtJ
1RF540
1RF540S
smd diode 2ba
smd diode JD
103S
AN-994
smd marking JD
marking AI
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PDF
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S4BV
Abstract: irl3103s
Text: PD -9.1338D International IOR Rectifier IRL3103S PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated VDSS = 30V
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OCR Scan
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1338D
IRL3103S
S4BV
irl3103s
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description
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OCR Scan
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IRF634S
SMD-220
SMD-220
D-6380
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PDF
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Untitled
Abstract: No abstract text available
Text: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated
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OCR Scan
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IRLI2203N
6598C
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature
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OCR Scan
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1326B
IRL2505S
4A55452
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PDF
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SD 57A
Abstract: ior 446h fa57sa50lc max5736 SD57a ir 446h
Text: PD-9.1650 International IOR Rectifier FA57SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Gate Charge Device
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OCR Scan
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OT-227
T-227contributeto
FA57SA50LC
SD 57A
ior 446h
fa57sa50lc
max5736
SD57a
ir 446h
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PDF
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U5305
Abstract: ior 481 mosfet 476 16q
Text: I , ,• I International IOR Rectifier PRELIMINARY PD 9.1402 IRFR/U5305 HEXFET Power MOSFET • • • • • • Vdss = "55 V Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated
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OCR Scan
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IRFR/U5305
IRFR5305)
IRFU5305)
f-481
EIA-541.
U5305
ior 481 mosfet
476 16q
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1360 International Rectifier IOR IRL2703S PRELIM INARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss RüS on
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OCR Scan
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IRL2703S
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