AN30182A
Abstract: LDO16
Text: DATA SHEET Part No. AN30182A Package Code No. XBGA025-W-2222AEL Publication date: April 2012 Ver. AEB 1 AN30182A Contents Overview …………………………………………….……………………………………………………………… 3
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AN30182A
XBGA025-W-2222AEL
AN30182A
LDO16
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Untitled
Abstract: No abstract text available
Text: 32E D • â23b320 0017103 7 H S IP NPN Silicon Switching Transistors PZT 2222;PZT 2222A SIEMENS/ SPCLi SEMICONDS _ • High DC current gain: 0.1 to 500 mA • Low collector -emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907A (PNP)
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23b320
12-mm
Q62702-Z2026
OT-223
PZT2222A
Q62702-Z2027
150Hz
200ns
10Mfi
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mpq2222 motorola
Abstract: transistor 2222a q2222 MPQ2222A ip 2222A 2222A MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MPQ2222 MPQ2222A* [u i iip [ip n il nói m i t i NPN Silicon L /S J lf \ i ‘ Motorola Preferred Device NPN r v i. r v i Lil tU 111 UJ LU [ü LÜ MAXIMUM RATINGS Rating MPQ2222A Unit 40
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MPQ2222
MPQ2222A*
MPQ2222A
O-116
Q0T3232
mpq2222 motorola
transistor 2222a
q2222
ip 2222A
2222A MOTOROLA
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Untitled
Abstract: No abstract text available
Text: STP2200ABGA S un M ic r o e l e c t r o n ic s July 1997 use Uniprocessor System Controller DATA SHEET D e s c r ip t io n The Uniprocessor System Controller USC has a DRAM m em ory controller and functions to regulate the flow of requests and data on the UPA bus. It also controls the resets going to all UPA clients.
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STP2200ABGA
SS-10/S
-20-type
128-MB
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N2222A
Abstract: PW 2N 218A n2222a2 2N2219A ip 2222A
Text: S G S -T H O M S O N 2 N 2 2 1 8 A -2 N 2 2 1 9 A R fflD is œ iL iO ÏÏM iD g i 2 N 2 2 2 1 A -2 N 2 2 2 2 A HIGH SPEED SWITCHES D E S C R IP T IO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec
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2N2218A,
2N2219A,
2N2221A
2N2222A
2N2218A
2N2219A)
2N2222A)
2N2218A/2N2219A
2N2221A/2N2222A
N2222A
PW 2N
218A
n2222a2
2N2219A
ip 2222A
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2n h 2222a
Abstract: 2N2218 2222a 2N5581 ip 2222A
Text: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s
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2N2218A
2N2219
2N2222
2N2218,
/2N2219
O-205AD)
2N2218
/19/19A/22/22A
2n h 2222a
2222a
2N5581
ip 2222A
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k27 vishay
Abstract: NPN2222A K27 pnp MMDT2227 k27 transistor MARKING K27 K27 npn PNP2907A
Text: PRODUCT NEW MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP Ideal for Low Power Amplification and
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/litem317
MMDT2227
222A-Type
907A-Type
OT-363,
MIL-STD-202,
PNP2907A
NPN2222A
OT-363
-150mA,
k27 vishay
K27 pnp
MMDT2227
k27 transistor
MARKING K27
K27 npn
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transistor 2222a
Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially
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t2222
Abstract: NT2222 NT2222A I/NT2222 NT2907 t2222a ICB01
Text: NEC NPN SILICON TRANSISTORS NT2222,NT2222A ELECTRON DEVICE GENERAL PU RPO SE A M P L IF IE R A N D H IG H -S P E E D , M E D IU M -P O W E R S W IT C H IN G N P N S IL IC O N E P IT A X IA L T R A N S IS T O R DESCRIPTION The N T2222, N T 2222A are NPN transistors, designed fo r general purpose am plifier and high-speed, mediumpower sw itching applications, feature injection-m olded plastic package fo r high re lia b ility .
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NT2222
NT2222A
T2222,
T2907,
T2907A
T2222A
t2222
NT2222A
I/NT2222
NT2907
ICB01
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BD373
Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Text: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800
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NSDU07
2IM3700
2M6731
PM3638
PN3638A
BC239
BC309
BC368
BC369
O-236AB
BD373
2n 2222A 3904
NSDU55
National Semiconductor Discrete devices catalog
ITT+Semiconductors+saj+300+t
BC560
NSDU05
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100414DC
Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501
Text: FAIRMONT ELECTRONICS PTY. LTD. TE L.48-6421 4 8 -6 4 8 1 /2 /4 C AB LES ' FAIRTRONICS' C R A IG H A L L T E L E X 8-3227 S A . P O .BOX 41102, C R A IG H A LL 2024. I ouani v-ox 39! 262Bramley 2018 FAIRCHILD 464 Ellis Street, M ountain View, C alifornia 94042
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262Bramley
orporation/464
962-5011/TWX
19-PIN
100414DC
5401DM
Fairchild dtl catalog
fsa2719m
4727BPC
FCM7010
FCM7004
937DMQB
fairchild rtl
FSA2501
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2222a
Abstract: 5ns turnon time npn transistors 2907 GES MPS2222A PN2222A 2221A 22a ic GES2221A GES2906 MPS2906
Text: E SOLI» STATE DI dF 3875081 G E SOLID STATE | 3Û75DÛ1 DDlT^bM □ 01E 17964 D Signal Transistors GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A, 22A, MPS2222A, PN2222A Silicon Transistors Features: • Low leakage currents ■ High speed switching ■ Epoxy encapsulation with proved reliablity - excellent characteristic stability under
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GES2906,
MPS2906,
GES2221A,
MPS2222A,
PN2222A
PN2222A
GES2906
MPS2906
2222a
5ns turnon time npn transistors
2907 GES
MPS2222A
2221A
22a ic
GES2221A
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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2N3303
Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any
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Chiana56
2N3303
T1S57
RJh 3347
2N3680
LA 4301
transistor ITT 2907
2N3792
2N3574
BF173
transistor bf 175
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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NPN transistor 2n2222A plastic package to116
Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package
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SP3763Q0
sp3763qf
O-116
SP3725QDB
SP34G7ADB
O-116
BT2946
2N2946
BT3999
NPN transistor 2n2222A plastic package to116
BT2907A
2N5146
2N3244
2N3245
2N3252
2N3253
2N3444
2N3467
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0HF40
0HF60
0HF80
6FP10
6F100
70HF10
UAA2001
MC8500
micromodule m68mm19
1N9388
74ALS643
2N6058
MC145026
2N5160 MOTOROLA
MC3340 equivalent
pn3402
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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QN-2907-A
Abstract: LT735 ap d444 2501 optocoupler lm 2491 CJ 4148 ZENER NVP 1204 QN2907A PC-M05A CI 4011
Text: Internal Analog Programming APG Interface INSTRUCTION MANUAL (Option M5A) Release 1.0 (94/05/20) TM-6HM5-AEM Electronic Measurements Inc. 405 Essex Road Neptune, New Jersey USA 07753 Tel.: (908) 922-9300 FAX: (908) 922-9334 1-800-631-4298 ANALOG PROGRAMMING INTERFACE
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25-pin
UA-0358-N
TL431CLP
UR-0431-CP
UA-0351-N
DG444
UI-D444-N
UP-4N37
UC-4011-BN
DIP3423
QN-2907-A
LT735
ap d444
2501 optocoupler
lm 2491
CJ 4148 ZENER
NVP 1204
QN2907A
PC-M05A
CI 4011
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TRANSISTOR NPN BA RV SOT - 89
Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes
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CQ89N
CQ89DS
CQ89MS
CQ89NS
OT-89
CMPSS061
CMPS5062
CMPS5063
CMPS5064
CZS5064
TRANSISTOR NPN BA RV SOT - 89
bc816
transistor ZT 2222a
BO338
CMPSH-3SE
2222A transistors
NPN 800V 900 watt 3a
TR 3906 PNP SM
BG SOT26
CMPZ4124
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