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    IPB021N04N

    Abstract: IEC61249-2-21 JESD22
    Text: IPB021N04N OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 40 V R DS(on),max 2.1 mΩ ID 160 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPB021N04N PG-TO263-7 IEC61249-2-21 21N04N IPB021N04N IEC61249-2-21 JESD22 PDF