IPB70N10S3-12 Search Results
IPB70N10S3-12 Price and Stock
Infineon Technologies AG IPB70N10S312ATMA1MOSFET N-CH 100V 70A TO263-3 |
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IPB70N10S312ATMA1 | Cut Tape | 459 | 1 |
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IPB70N10S312ATMA1 | 862 |
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IPB70N10S312ATMA1 | 8,000 | 1,000 |
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IPB70N10S312ATMA1 | 5,000 | 12 Weeks | 1,000 |
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IPB70N10S312ATMA1 | 1,440 | 1 |
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IPB70N10S312ATMA1 | Cut Tape | 870 |
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IPB70N10S312ATMA1 | 10,100 |
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Infineon Technologies AG IPB70N10S312ATMA2MOSFET_(75V 120V( |
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IPB70N10S312ATMA2 | Reel | 1,000 |
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IPB70N10S312ATMA2 | Reel | 12 Weeks | 1,000 |
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IPB70N10S312ATMA2 |
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IPB70N10S312ATMA2 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB70N10S3-12MOSFETs N-Ch 100V 70A D2PAK-2 OptiMOS-T |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB70N10S3-12 | 290 |
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IPB70N10S3-12 | 59 | 2 |
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IPB70N10S3-12 | 298 |
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IPB70N10S3-12 | 10,100 |
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IPB70N10S3-12 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB70N10S3-12 |
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Single: N-Channel 100V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 100.0 V; RDS (on) (max) (@10V): 11.3 mOhm; ID (max): 70.0 A; RthJC (max): 1.2 K/W; | Original | |||
IPB70N10S312ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 70A TO263-3 | Original |