IPP80N06S2-09 Search Results
IPP80N06S2-09 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPP80N06S2-09 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 9.1 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W; | Original | |||
IPP80N06S209AKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO220-3 | Original | |||
IPP80N06S209AKSA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO220-3 | Original |