IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
IN1190A diode
an 80771
hfa30pa60
SCR gate drive circuit
A6F diode
HFA120FA60
HF50A060
DT93-1
HFA16PB120
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PDF
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SCR gate drive circuit
Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Text: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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Original
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
SCR gate drive circuit
an 80771
IN1190A diode
20509
Diode 31DQ
HFA25TB60
SD400N
IR 31DQ 03
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PDF
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mbrf1060ctl
Abstract: No abstract text available
Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1
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OD-123
BAT54W
OT-323
BAT54WS
BAT54A
OT-23
BAT54C
BAT54S
mbrf1060ctl
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PDF
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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OCR Scan
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.396 rev. C 08/00 10BQ015 1 Amp SCHOTTKY RECTIFIER SMB Major Ratings and Characteristics Description/Features Characteristics 10BQ015 Units IF AV Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @1.0 Apk, TJ=125°C 0.32 V
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10BQ015
10BQ015
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PDF
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IR1B
Abstract: No abstract text available
Text: PD-2.396 rev. B 02/2000 10BQ015 1 Amp SCHOTTKY RECTIFIER SMB Major Ratings and Characteristics Description/Features The 10BQ015 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk
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10BQ015
10BQ015
IR1B
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PDF
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AN-994
Abstract: 10BQ015PBF JA marking
Text: Bulletin PD-20782 07/04 10BQ015PbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C
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PD-20782
10BQ015PbF
10BQ015PbF
12-Mar-07
AN-994
JA marking
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PDF
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10BQ015
Abstract: 10BQ015TR AN994
Text: Bulletin PD-2.396 rev. D 02/01 10BQ015 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Description/Features Characteristics 10BQ015 Units IF AV Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @1.0 Apk, TJ=125°C 0.32 V
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10BQ015
10BQ015
10BQ015TR
AN994
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PDF
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ir1c
Abstract: DIODE IR1C 10BQ015 10BQ015TR AN-994
Text: Bulletin PD-2.396 rev. H 03/03 10BQ015 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Description/ Features Characteristics 10BQ015 Units IF AV Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C 0.32
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Original
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10BQ015
10BQ015
10BQ015TR
ir1c
DIODE IR1C
AN-994
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.396 rev. G 05/02 10BQ015 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Description/Features The 10BQ015 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier
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10BQ015
10BQ015
10BQ015TR
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PDF
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10BQ015
Abstract: 10BQ015TR AN-994 IR 10BQ015
Text: Bulletin PD-2.396 rev. E 05/01 10BQ015 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Description/Features Characteristics 10BQ015 Units IF AV Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @1.0 Apk, TJ=125°C 0.32 V
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Original
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10BQ015
10BQ015
10BQ015TR
AN-994
IR 10BQ015
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PDF
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DIODE IR1C
Abstract: ir1c
Text: Bulletin PD-20783 07/04 10BQ015PbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C
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PD-20783
10BQ015PbF
10BQ015PbF
DIODE IR1C
ir1c
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PDF
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DIODE IR1C
Abstract: ir1c ir1c 04 10BQ015 AN-994
Text: Bulletin PD-2.396 rev. I 07/04 10BQ015 SCHOTTKY RECTIFIER 1 Amp IF AV = 1 Amp VR = 15V Major Ratings and Characteristics Description/ Features The 10BQ015 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very
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Original
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10BQ015
10BQ015
DIODE IR1C
ir1c
ir1c 04
AN-994
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PDF
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DIODE IR1C
Abstract: 10BQ015PBF ir1c AN-994
Text: Bulletin PD-20782 07/04 10BQ015PbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C
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Original
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PD-20782
10BQ015PbF
10BQ015PbF
DIODE IR1C
ir1c
AN-994
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PDF
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DIODE IR1C
Abstract: No abstract text available
Text: Bulletin PD-20782 07/04 10BQ015PbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 15V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular waveform 1.0 A VRRM 15 V IFSM @ tp = 5 µs sine 140 A VF @ 1.0 Apk, TJ=125°C
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Original
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PD-20782
10BQ015PbF
10BQ015PbF
08-Mar-07
DIODE IR1C
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.396 rev. I 07/04 10BQ015 SCHOTTKY RECTIFIER 1 Amp IF AV = 1 Amp VR = 15V Major Ratings and Characteristics Description/ Features The 10BQ015 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very
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Original
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10BQ015
10BQ015
125ded
08-Mar-07
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PDF
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10BQ015PBF
Abstract: MARKING V1C VS-10BQ015
Text: VS-10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES Cathode • • • • • Anode SMB • • • • PRODUCT SUMMARY IF AV 1.0 A VR 15 V 125 °C TJ operation (VR < 5 V) Optimized for OR-ing applications Ultralow forward voltage drop
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
VS-10BQ015PbF
18-Jul-08
10BQ015PBF
MARKING V1C
VS-10BQ015
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PDF
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Untitled
Abstract: No abstract text available
Text: 10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • 125 °C TJ operation VR < 5 V Available • Optimized for OR-ing applications RoHS* • Ultra low forward voltage drop COMPLIANT • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term
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10BQ015PbF
10BQ015PbF
18-Jul-08
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PDF
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10BQ015PBF
Abstract: No abstract text available
Text: 10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • 125 °C TJ operation VR < 5 V • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term
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Original
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10BQ015PbF
2002/95/EC
10BQ015PbF
18-Jul-08
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PDF
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MARKING V1C
Abstract: 10BQ015PbF
Text: 10BQ015PbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • 125 °C TJ operation VR < 5 V • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term
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Original
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10BQ015PbF
10BQ015PbF
18-Jul-08
MARKING V1C
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PDF
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VS-10BQ015
Abstract: 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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Original
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
VS-10BQ015PbF
18-Jul-08
VS-10BQ015
10BQ015PbF
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PDF
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MARKING V1C
Abstract: VS-10BQ015PBF VS-10BQ015 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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Original
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
11-Mar-11
MARKING V1C
VS-10BQ015PBF
VS-10BQ015
10BQ015PbF
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PDF
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VS-10BQ015
Abstract: 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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Original
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
VS-10BQ015PbF
11-Mar-11
VS-10BQ015
10BQ015PbF
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PDF
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VS-10BQ015
Abstract: 10BQ015PbF
Text: VS-10BQ015PbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Cathode • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation VR < 5 V • High frequency operation
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Original
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VS-10BQ015PbF
J-STD-020,
2002/95/EC
DO-214AA)
VS-10BQ015PbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-10BQ015
10BQ015PbF
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PDF
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