MBR360
Abstract: No abstract text available
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: MBR360 Single Anode 3A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current
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MBR360
14mil)
MBR360
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MBR340
Abstract: No abstract text available
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR340 Single Anode General Description: 40 V 3 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current
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MBR340
14mil)
MBR340
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SMBR360
Abstract: No abstract text available
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: SMBR360 Single Anode 3A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current
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SMBR360
14mil)
SMBR360
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MBR3100
Abstract: No abstract text available
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR3100 Single Anode General Description: 100 V 3 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current
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MBR3100
12Volt
14mil)
MBR3100
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SMBR340
Abstract: No abstract text available
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR340 Single Anode General Description: 40 V 3 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current
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SMBR340
14mil)
SMBR340
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Untitled
Abstract: No abstract text available
Text: MBR 3100 SCHOTTKY DIE SPECIFICATION TYPE: MBR3100 RSingle □Dual Anode General Description: 100 V 3 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
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MBR3100
25mil)
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MBR360
Abstract: No abstract text available
Text: MBR 360 SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: MBR360 RSingle □Dual Anode 3A ( Low Ir) ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage
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MBR360
25mil)
MBR360
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Untitled
Abstract: No abstract text available
Text: MBR 340 SCHOTTKY DIE SPECIFICATION TYPE: MBR340 RSingle □Dual Anode General Description: 40 V 3 A (Low Ir) SYM ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) IFAV Average Rectified Forward Current Maximum Instantaneous Forward Voltage
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MBR340
25mil)
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TRANSISTOR SMD MARKING CODE 3401
Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Text: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111
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GEMY6050
TRANSISTOR SMD MARKING CODE 3401
Q65110A6342
TRANSISTOR SMD MARKING CODE 702
fototransistor BPW 39
SFH415U
sidelooker smd DIODE
transistor smd 3401
SFH 4740
LPT80
BPY62
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Untitled
Abstract: No abstract text available
Text: SMA - 50 Ohm Connectors PC Mount INCHES MILLIMETERS • CUSTOMER DRAWINGS AVAILABLE ON REQUEST Right Angle Jack Receptacle - Moisture Seal* FREQ. RANGE NICKEL BODY, GOLD INTERFACE IR COMPATIBLE* 0-18 GHz 142-0701-335* * Tin/Lead solder dipped legs and Moisture Sealed for IR Reflow Compatibility.
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FDC37C665GT
Abstract: ide pin functions FDC37C665IR 44 pin ide to 40 pin ide FDC37C665 SA10 FDC37 FDC37C93X
Text: APPLICATION NOTE 5.6 FDC37C93x / FDC37C665GT/IR DUAL FOOTPRINT This document describes a dual footprint layout for the FDC37C93x and the FDC37C665GT/IR. The FDC37C93x is a 160 pin QFP and the FDC37C665GT/IR is a 100 pin QFP. The FDC37C93x supports all of the REQUIREMENTS and RECOMMENDATIONS of WINDOWS 95. Specifically, it provides the
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FDC37C93x
FDC37C665GT/IR
FDC37C665GT/IR.
FDC37C93x
FDC37C665GT
ide pin functions
FDC37C665IR
44 pin ide to 40 pin ide
FDC37C665
SA10
FDC37
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ide pin functions
Abstract: FDC37C665 FDC37C665GT FDC37C665IR SA10
Text: APPLICATION NOTE 5.6 FDC37C93x / FDC37C665GT/IR DUAL FOOTPRINT This document describes a dual footprint layout for the FDC37C93x and the FDC37C665GT/IR. The FDC37C93x is a 160 pin QFP and the FDC37C665GT/IR is a 100 pin QFP. The FDC37C93x supports all of the REQUIREMENTS and RECOMMENDATIONS of WINDOWS 95. Specifically, it provides the
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FDC37C93x
FDC37C665GT/IR
FDC37C665GT/IR.
FDC37C93x
ide pin functions
FDC37C665
FDC37C665GT
FDC37C665IR
SA10
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MIL-G-83528
Abstract: LMR-100 LMR-195 LMR-200 LMR-240 RG-142
Text: SMA 50 Ohm Right Angle PC Mount Jack Receptacle - Moisture Seal* VSWR & FREQ. RANGE NICKEL BODY, GOLD INTERFACE IR COMPATIBLE* VSWR: N/A 0-18 GHz 142-0701-335* INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST * Tin/Lead solder dipped legs and Moisture Sealed for IR Reflow Compatibility.
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QQ-B-613,
MIL-G-45204
QQ-N-290
QQ-B-626
ZZ-R-765
MIL-G-83528,
MIL-C-39012
MIL-G-83528
LMR-100
LMR-195
LMR-200
LMR-240
RG-142
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NTE504
Abstract: NTE505
Text: NTE504 and NTE505 High Voltage Selenium Rectifier for TV Applications Absolute Maximum Ratings: Breakdown Voltage tvj ≤ tvjmax, iR = 200µA, fo = 50Hz, tp(iR ≤ 2.5ms, t ≤ 5s), VBR NTE504 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≥31kV
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NTE504
NTE505
NTE504
16kHz)
NTE505
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Untitled
Abstract: No abstract text available
Text: SMA 50 Ohm Straight PC Mount Jack Receptacle VSWR & FREQ. RANGE GOLD PLATED NICKEL PLATED IR COMPATIBLE "A" VSWR: N/A 0-18 GHz 142-0701-231 142-0701-236 142-0701-235* .110 2.79 INCHES (MILLIMETERS) CUSTOMER DRAWINGS AVAILABLE UPON REQUEST * Tin/Lead solder dipped legs for IR Reflow Compatibility.
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MIL-G-45204
QQ-N-290
QQ-B-626
QQ-B-613,
ZZ-R-765
MIL-G-83528,
MIL-C-39012
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Untitled
Abstract: No abstract text available
Text: SB 3100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 3 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
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SB3100
25mil)
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Untitled
Abstract: No abstract text available
Text: TSOP14838 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP14838 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP14838
TSOP14838
D-74025
22-Jan-07
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TSAL6200
Abstract: TSOP14838
Text: TSOP14838 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP14838 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP14838
TSOP14838
08-Apr-05
TSAL6200
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SB360 diode
Abstract: SB360
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: SB360 Single Anode 3A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current
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SB360
14mil)
SB360 diode
SB360
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TSAL6200
Abstract: TSOP14838
Text: TSOP14838 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP14838 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP14838
TSOP14838
18-Jul-08
TSAL6200
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SB3100
Abstract: No abstract text available
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB3100 Single Anode General Description: 100 V 3 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current
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SB3100
14mil)
SB3100
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Untitled
Abstract: No abstract text available
Text: SB 340 SCHOTTKY DIE SPECIFICATION General Description: 40 V 3 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage
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SB340
25mil)
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SB320
Abstract: No abstract text available
Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB320 Single Anode General Description: 20 V 3 A Standard VF ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA for wafer form VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current
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SB320
14mil)
SB320
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IRV60
Abstract: 5MO 165 IRV200W IRH150W IRH300W IRV300W IRV500 IRH200 IRV500L IRH100
Text: = j g g r .= = - P C N R ESISTO R S= Compliance n HIGH POWER TYPE METAL CLAD WIRE-WOUND RESISTORS m IRH, IRV Shape & Dimensions mm A AA IR H 6 0 -IR H 1 5 0 x‘! 10 (IRH60:13) * VH » '& g L2 °'81^ / g \ \ A 2 5 l 12.5 = 15 10_ / IR H 2 0 0 -IR H 5 0 0
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IRH60
IRH60L
IRH60W
IRV60L
IRV60W
IRH80
IRH80L
IRH80W
IRV80L
IRV80W
IRV60
5MO 165
IRV200W
IRH150W
IRH300W
IRV300W
IRV500
IRH200
IRV500L
IRH100
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