transistor d 331
Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten
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331-JK
Q62702-P1634
transistor d 331
D F 331 TRANSISTOR
d 331 TRANSISTOR equivalent
switching transistor 331
Q62702-P1634
phototransistor 650 nm
phototransistor peak 550 nm
transistor d 331 data
c 331 transistor
transistor C 331
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transistor h 331
Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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331-JK
Q62702-P1634
GPLY6924
transistor h 331
c 331 transistor
331 transistor
switching transistor 331
phototransistor 650 nm
transistor 331
d 331 Transistor
Q62702-P1634
phototransistor 550 nm
phototransistor peak 550 nm
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phototransistor 650 nm
Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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Q62702-P1634
OHF01924
GPL06924
phototransistor 650 nm
Q62702-P1634
fototransistor led
c 331 transistor
transistor d 331
331 transistor
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phototransistor 650 nm
Abstract: phototransistor peak 550 nm
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
2006-0y
phototransistor 650 nm
phototransistor peak 550 nm
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL REF. : SF0602□□□□L□-□□□ ABC'S DWG NO. PROD. SMD Line Filter NAME REV. 20130927-F 1 PAGE B 331 Ⅰ﹒Configuration and dimensions： Marking C A D G 1.0 2.5 3 E W 2 1.5 6.6 1 PCB Pattern 4 F Unit：m/m A 6.50 max.
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SF0602â
20130927-F
30sec
60sec
150sec
MIL-STD-202
JESD22-B111
JIS-C-6429
AR-001C
J-STD-002
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transistor d-331
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
transistor d-331
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SMD 392
Abstract: MLCC bias TCC K5-001
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in C0G dielectric are
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AUK 821
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in C0G dielectric are
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CR1218
Abstract: CR0603 CR0805 CR1206 CR1210 CR2010 CR2030 CR2512
Text: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application
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Untitled
Abstract: No abstract text available
Text: ATC GENERAL PURPOSE CAPACITORS: NPO COG DIELECTRIC ELECTRICAL CHARACTERISTICS CAPACITANCE RANGE: 0.5 pF to 0.10 µF. TEMPERATURE CHARACTERISTIC: 0 ± 30ppm/°C. W L OPERATING TEMPERATURE RANGE: -55°C to +125°C. T (MAX.) DISSIPATION FACTOR: 0.1% (max.) @ + 25°C and + 125°C @ 1.0 Vrms
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30ppm/
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cal-chip GMC21 Series
Abstract: No abstract text available
Text: Cal-Chip Electronics, Incorporated Multilayer Ceramic Chip Capacitors GMC SERIES Introduction Multilayer Surface Mount Ceramic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceramic dielectric materials and firing into a concrete monolithic body, then completed by application of
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473 capacitor
Abstract: No abstract text available
Text: Cal-Chip Electronics, Incorporated Multilayer Ceramic Chip Capacitors GMC SERIES Introduction Multilayer Surface Mount Ceramic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceramic dielectric materials and firing into a concrete monolithic body, then completed by application of
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Untitled
Abstract: No abstract text available
Text: Cal-Chip Electronics, Incorporated Multilayer Ceramic Chip Capacitors GMC SERIES Introduction Multilayer Surface Mount Ceramic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceramic dielectric materials and firing into a concrete monolithic body, then completed by application of
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transistor h 331
Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
Text: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten
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Q62702-P1634
hotocurrent/pCE//pCE250
transistor h 331
D F 331 TRANSISTOR
C 331 Transistor
transistor d 331
d 331 Transistor
transistor 331 p
331 transistor
y 331 Transistor
transistor 331
VQE 22 led
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Untitled
Abstract: No abstract text available
Text: 13 C IR C U IT S IZ E 6 8 I0 10 D IM . •A" D IM . 'B ' .331 8 .4 0 .4 9 6 (1 2 .6 0 ) .6 6 1 (1 6 .8 0 ) .7 6 (19.2) I4 I6 I8 20 22 24 .5 5 IM£LQUL3£!iS 1.25 (31.8) 1.42 ( 3 6 .0 ) l ■I65 (4 .2 0 ) ■31 (7 .9 ) ■287 _ (7 .3 0 ) .22 (5 .6 ) R EF'
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SDA-42417-*
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Untitled
Abstract: No abstract text available
Text: 13 C IR C U IT S IZ E 2 4 6 8 I0 I2 I4 I6 I8 20 22 24 10 D IM . •A" — .165 4 .2 0 .331 (8 .4 0 ) .4 9 6 (1 2 .6 0 ) .6 6 1 (1 6 .8 0 ) .8 2 7 (2 1 .0 0 ) .9 9 2 (2 5 .2 0 ) 1.157 (2 9 .4 0 ) 1.323 (3 3 .6 0 ) 1.488 (3 7 .8 0 ) 1.654 (4 2 .0 0 ) 1.819
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Untitled
Abstract: No abstract text available
Text: 13 10 D IM . •A" D IM . 'B ' .331 8 .4 0 .4 9 6 (1 2 .6 0 ) .6 6 1 (1 6 .8 0 ) .7 6 (19.2) C IR C U IT S IZ E 6 8 I0 I2 I4 I6 I8 20 22 24 .8 2 7 (2 1 .0 0 ) .9 9 2 (2 5 .2 0 ) 1.157 (2 9 .4 0 ) 1.323 (3 3 .6 0 ) 1.488 (3 7 .8 0 ) 1.654 (4 2 .0 0 ) 1.819
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Untitled
Abstract: No abstract text available
Text: 13 10 D IM . "A" D IM . "B" D IM . "C" D IM . "D" .6 0 6 1 5 .4 0 .7 7 2 (1 9 .6 0 ) .9 3 7 (2 3 .8 0 ) .3 5 4 (9 .0 0 ) .5 2 0 (1 3 .2 0 ) .6 8 5 (1 7 .4 0 ) .213 (5 .4 0 ) .3 7 8 (9 .6 0 ) .5 4 3 (1 3 .8 0 ) .165 (4 .2 0 ) .331 (8 .4 0 ) C IR C U IT S IZ E
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SD-44130-001
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Untitled
Abstract: No abstract text available
Text: 13 10 D IM . "A" C IR C U IT S IZ E "A" REF. l.8 0 ± .0 5 D IA.- .165 (4 .2 0 ) .331 (8 .4 0 ) .3 7 8 (9 .6 0 ) .5 4 3 (1 3 .8 0 ) .7 0 9 .4 9 6 (1 2 .6 0 ) (1 8 .0 0 ) .6 6 1 .8 7 4 (1 6 .8 0 ) (2 2 .2 0 ) .8 2 7 1.039 (2 1 .0 0 ) (2 6 .4 0 ) .9 9 2 1.205
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SDA-43232-*
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IRF730
Abstract: 733 331 IRFP330 731 MOSFET IRF731 IRFP331 331Z Z012I IRF732 dd173d
Text: SA M S UN G E L E C T R O N I C S INC b7E D • V T b M l M S D G I T S T T 523 ■ SUCK N-CHANNEL POWER MOSFETS IRF730/731Z732/733 IRFP330/331/332/333 FEATURES • • • • • • • TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times
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IRF730/731Z732/733
IRFP330/331/332/333
IRF730/IRFP330
IRF731
/IRFP331
IRF732/IRFP332
IRF733/IRFP333
T0-220
IRF730/7
IRF730
733 331
IRFP330
731 MOSFET
IRFP331
331Z
Z012I
IRF732
dd173d
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HM 392 - 560
Abstract: TE MARKING CODE 6-PIN ic HM 392 - 560
Text: For technical assistance call the Networks Products number on the back cover. Top m arking standard Features • High profile offers increased pow er handling ■ C om patible w ith autom atic insertion equipm en t ■ S up erio r package integrity ■ M arkin g on contrasting background fo r
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4300H
100ppm/
250ppm/
50ppm/
HM 392 - 560
TE MARKING CODE 6-PIN
ic HM 392 - 560
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IR 331 G
Abstract: R331603
Text: T H T .2 0 series C ab le S T Y L E C O D E N o. > -O V max. 0a group 1 s i/i < n i/i 3 J 0> — c c tf “•I a. X ai a 5 REC EPTAC LES a 19 4 h o i n s 0 3.2 JL . 1-fCTTn R 331 405 m S q u a r e fl a n g e • P.T .F .E . in su la to r a31 - a 34 73 J7
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23/flnts
110mm
IR 331 G
R331603
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IRF420
Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Text: !R Selector Guide ] MOSPOWER Selector Guide B S ilic o n ix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350
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IRF450
IRF452
IRF440
IRF442
VNP002A*
VN5001A
IRF430
VN5002A
IRF432
IRF420
IRF420
IRF422
IRF430
IRF432
IRF440
IRF442
IRF450
IRF452
VN5001A
VN5002A
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Untitled
Abstract: No abstract text available
Text: FACTSHEET F-199 amtec TMM S^-T 2mm HEADER TMM SERIES S P E C IF IC A T IO N S Materials: Insulator Material: Black Liquid Crystal Polymer Term inal Material: Phosphor Bronze Operating Tem p Range: -65°C to +105°C with Tin; -65°C to +125°C with Gold Plating:
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F-199
1-800-SAMTEC-9
812-944-6733-Fax:
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