TYP 513 309
Abstract: Q62702-P1001 Q62702-P1002 Q62702-P860 SFH409 IR 409 K
Text: SFH 409 SFH 409 fex06250 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren ● Hohe Zuverlässigkeit
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fex06250
TYP 513 309
Q62702-P1001
Q62702-P1002
Q62702-P860
SFH409
IR 409 K
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GEXY6250
Abstract: Q62702-P1002 Q62702-P860
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 487
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GEX06250
Abstract: OHLY0598 SFH 409 SFH 487
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger
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GEX06250
Abstract: Q62702-P1001 Q62702-P1002 Q62702-P860
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 487
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OHR01887
GEX06250
GEX06250
Q62702-P1001
Q62702-P1002
Q62702-P860
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SFH 200 optokoppler
Abstract: GEXY6250 Q62703-Q1095 Q62703-Q2174
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 Wesentliche Merkmale Features • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 409
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Q62703-Q1095
Abstract: Q62703-Q2174 GEX06250
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 Wesentliche Merkmale • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 409
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OHR01895
GEX06250
Q62703-Q1095
Q62703-Q2174
GEX06250
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OPTOKOPPLER
Abstract: SFH 200 optokoppler GEXY6250 Q62703-Q1095 Q62703-Q2174
Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 Wesentliche Merkmale Features • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 409
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GEXY6250
OPTOKOPPLER
SFH 200 optokoppler
GEXY6250
Q62703-Q1095
Q62703-Q2174
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BZ 1106
Abstract: smd code s4 BC 511 A361
Text: CD 293 BZ Series 4 000h at 85°C CD 296 KC CD 294 BW • Standard 85°C 105°C 105°C longer life CD 293 BZ higher current CD 295 BC CD 29D HR larger size higher current CD 29L QL Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V)
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120Hz)
v2006
BZ 1106
smd code s4
BC 511
A361
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AMI+729/829
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and
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Untitled
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and
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X2 MKP SH
Abstract: mkt gpf k 40/085/21 capacitor x2 mkp 40/100/21 MKP X2 GPF gpf CAPACITOR gpf k x2 MKP x2 SH 275 capacitor x2 GMF 40/100/21 X2 MKP gmf capacitor x2 GMF 40/085/21
Text: A KYOCERA GROUP COMPANY TPC Suppressor Capacitors Classes X & Y Contents General Technical Information on Interference Suppression . . . . . 2 Ordering Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 QX Series Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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S-SCCXY10M698-N
X2 MKP SH
mkt gpf k 40/085/21
capacitor x2 mkp 40/100/21
MKP X2 GPF
gpf CAPACITOR
gpf k x2
MKP x2 SH 275
capacitor x2 GMF 40/100/21
X2 MKP gmf
capacitor x2 GMF 40/085/21
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capacitor jianghai cd 293
Abstract: A361 bc 136 radial capacitor Jianghai Europe GmbH
Text: CD 29D HR Series 7 000h at 85°C CD 296 KC • Small Size · Long Useful Life · High Ripple Current · Industrial Power Supplies and Inverters 105°C longer life CD 293 BZ longest life CD 295 BC highest current larger size higher current CD 29D HR CD 29L QL
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120Hz)
v2006
capacitor jianghai cd 293
A361
bc 136 radial capacitor
Jianghai Europe GmbH
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capacitor jianghai cd 293
Abstract: Jianghai CD 261X QX highest currents Jianghai Europe SMD CODE M8 A361 T4 560 35x80 Jianghai Europe GmbH T4 1060 SMD
Text: CD 29H QH Series 5 000 h at 105°C CD 299 PG CD 29H QH • Long Useful Life · Highest Ripple Current · Miniaturized · Industrial Power Supplies and Inverters longest life higher current highest current CD 294 BW longer life CD 296 KC longer life CD 297 BB
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120Hz)
v2006
capacitor jianghai cd 293
Jianghai
CD 261X QX highest currents
Jianghai Europe
SMD CODE M8
A361
T4 560
35x80
Jianghai Europe GmbH
T4 1060 SMD
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DA811A
Abstract: DA811K 8110A gem 65 da814a
Text: DA811A/K … DA8110A/K 1.2 W Rectifier Arrays Gleichrichter Sätze Version 2004-10-01 Nominal power dissipation Nenn-Verlustleistung ±0.2 4.5 2.6 Repetitive peak reverse voltage 100.1000 V Periodische Spitzensperrspannung Type / Typ 9 Pin-Plastic case
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DA811A/K
DA8110A/K
DA811A.
DA811K.
8110K"
DA811A
DA811K
8110A
gem 65
da814a
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ls 487
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 4.0 3.6 0iffei 5 2 9 - ^ 6.3 27 5.9 ^ C a th o d e S F H 409 Anode (SFH 487) — (3.5) Chip position . _0.6 ,.v^ V 0.4 GEX06250 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GEX06250
ls 487
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sfh 309 fr
Abstract: No abstract text available
Text: SIEM EN S GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat* M f 0 .4 oo^ öö V 4.1 I—-3 .9 § .? !_ 4.0 3.6 -ífeÆ sa o -r Mw , 3.5 I Chip positio n X m 0 .4 — 29— 27 C athode=SFH 409 Anode =SFH487 A p p ro x. w e ig h t 0 .3 g
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SFH487
950nmK
023Sb05
sfh 309 fr
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i448
Abstract: No abstract text available
Text: E2P0051-37-X3 This version: Jan. 1998 Previous version: May. 1997 O K I electronic components OCM4D8, 4D 9 SERIES_ Dual-Channel/Package General-purpose Type Optical MOS Relay For AC/DC Load GENERAL DESCRIPTION The OCM4D8 and OCM4C9 Series are dual-channel, optical MOS relays for AC /DC load. The
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E2P0051-37-X3
i448
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC 5 bE D • 5 S b 5 TGS G G Q 1 1 7 G Q ■ T 64 x 8- and 9-bit FIFO with Flags + OE L8C408/409 DESCRIPTION FEATURES □ First-In/First Out FIFO using Dual-Port Memory □ Maximum Shift Rate— 45 MHz □ Asychronous and Simultaneous Read and Write
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L8C408/409
CV7C408/409
28-pin
L8C4Q8/409
L8C40S
L8C409
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ot 409
Abstract: UPC 1035
Text: CD 293 BZ Series 2000h a t 85°C la rg e r size h ig h e r c u rre n t| C D 2 9 LQ L Item C h aracteristics O p era tin g Tem perature R a n g e ”C -40 ' V o lta g e R a n g e (V) +85 -25 ' 10 - 400 +85 450 - 500 C a p a c it a n c e R a n g e (pF) 68 - 82000
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2000h
120Hz)
120Hz
ot 409
UPC 1035
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4093 N
Abstract: 4093 4093 be 4091 d 4093 Vgsoff -6V 4092 40921 esm 4092 ESM4091
Text: *ESM 4091 *ESM 4092 *ESM 4093 FIELD-EFFECT TRANSISTORS, SILICON, N CHANNEL T R A N S IS T O R S A E F F E T D E C H AM P, S IL IC IU M , C A N A L N % Preferred device D isp o sitif recommandé Fast switching C o m m u ta tio n rapide Chopper 30 mA 15 mA 8 mA
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CB-76
4093 N
4093
4093 be
4091
d 4093
Vgsoff -6V
4092
40921
esm 4092
ESM4091
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408A2
Abstract: No abstract text available
Text: DG408/409 Vishay Siliconix 8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers FE ATU R E S B E N E F IT S A P P L IC A T IO N S • • • • • • • • • • • • • • • • • • • • Low On-Resistance— ros on : 100 Q Low Charge Injection—Q: 20 pC
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DG408/409
DG408
DG409
DM7493
S-52433--
06-Sep-99
408A2
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Untitled
Abstract: No abstract text available
Text: 'A * kA •■ ^ " r l fl In « inc. . yO*"* POWER Specialists 1601 N- Clancy, Visalia, CA 93291 209 651-2222 Fax (209) 651-0188 ITT Telex Number: 4994462 -Cable -Address: "TRIMAG' TDB4 SERIES 3 Watt DC-DC CONVERTER 24 Pin DIP Single & Dual Output
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DIODE T25 4 do
Abstract: bb409 DIODE T25 4 DIODE T25 DIODE 409 Q62702-B112 IR 409 H DIODE T25 4 C
Text: SIEMENS Silicon Variable Capacitance Diode BB 409 • For VHF tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BB 409 green Q62702-B112 DO-35 DHD o - ^ -o EHA07001 Maximum Ratings Parameter Symbol
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Q62702-B112
EHA07001
DO-35
aZ35b05
0235bOS
535b05
DIODE T25 4 do
bb409
DIODE T25 4
DIODE T25
DIODE 409
Q62702-B112
IR 409 H
DIODE T25 4 C
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EM 4093
Abstract: No abstract text available
Text: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )
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Q4titi07
EM 4093
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