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    IR IRF640 Search Results

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    IR IRF640 Price and Stock

    Infineon Technologies AG IRF640NPBF

    MOSFETs MOSFT 200V 18A 150mOhm 44.7nC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF640NPBF 22,456
    • 1 $1.6
    • 10 $0.789
    • 100 $0.682
    • 1000 $0.509
    • 10000 $0.431
    Buy Now

    Infineon Technologies AG IRF640NSTRLPBF

    MOSFETs MOSFT 200V 18A 150mOhm 44.7nC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF640NSTRLPBF 21,198
    • 1 $1.9
    • 10 $1.25
    • 100 $0.887
    • 1000 $0.58
    • 10000 $0.575
    Buy Now

    Vishay Intertechnologies IRF640PBF-BE3

    MOSFETs TO220 200V 18A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF640PBF-BE3 5,334
    • 1 $2.06
    • 10 $1.36
    • 100 $1.07
    • 1000 $1.05
    • 10000 $1.05
    Buy Now

    Vishay Intertechnologies IRF640PBF

    MOSFETs TO220 200V 18A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF640PBF 3,106
    • 1 $1.88
    • 10 $1.5
    • 100 $1.2
    • 1000 $1.19
    • 10000 $1.06
    Buy Now

    Vishay Intertechnologies IRF640SPBF

    MOSFETs N-Chan 200V 18 Amp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF640SPBF 2,443
    • 1 $2.56
    • 10 $1.29
    • 100 $1.27
    • 1000 $1.24
    • 10000 $1.21
    Buy Now

    IR IRF640 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


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    OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    IRF734

    Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
    Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


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    FA38SA50LC OT-227 FA57SA50LC FB180SA10 IRC530 O-220 IRC540 IRF734 irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


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    May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    D2Pak Package dimensions

    Abstract: AN-994
    Text: IRF640NPbF/SPbF/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L "


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    IRF640NPbF/SPbF/LPbF EIA-418. O-220AB AN-994. D2Pak Package dimensions AN-994 PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


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    BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    International Rectifier irf640n

    Abstract: irf640n N-Channel MOSFET 200v
    Text: PD - 94007 IRF640N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.15Ω G ID = 18A


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    IRF640N O-220 International Rectifier irf640n irf640n N-Channel MOSFET 200v PDF

    IRF640FI

    Abstract: GC525
    Text: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 4 0 IR F 6 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V IRF640 IRF640FI dss 200 V 200 V R DS on < 0.18 < 0.18 a a Id 18 A 10 A . TYPICAL RDs(on) = 0.145 Q . . AVALANCHE RUGGED TECHNOLOGY


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    IRF640 IRF640FI O-220 ISOWATT220 IRF640FI IRF640/FI ISOWATT22Q GC525 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V IR F 6 4 0 IR F 6 4 0 F P dss 200 V 200 V R D S o n Id < 0.1 8 Q. < 0.1 8 Q. 18 A 18 A . TYPICAL Ros(on) =0.1 50 £1 . EXTREMELY H IG H dV /dt CAPABILITY . VERY LOW INTRINSIC CAPACITANCES


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    IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP PDF

    f640

    Abstract: IR 643 643R
    Text: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*


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    F640/641/642/643 F640R/641R/642R /643R IRF640, IRF641, IRF642, IRF640R, IRF641R, IRF642R IRF643R f640 IR 643 643R PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*


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    QDS4033 F640/641/642/643 F640R /641R /642R /643R T0-22QAB IRF640, IRF641, IRF642, PDF

    irf640

    Abstract: IRF640FI
    Text: = 7 kT # S G S -T H O M S O N IRaO CœillLI(B,flB(S MD(Ëi IRF640 IRF640FI N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S . . . . 00 00 ö Ö R DS(on) A 200 V 200 V O O V dss IR F 640 IR F 640 F I A TYPE Id 18 A 10 A TY P IC A L R DS(on) = 0.145 Q


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    IRF640 IRF640FI IRF640FI O-220 ISOWATT220 IRF640/FI ISOWATT220 PDF

    RF640

    Abstract: No abstract text available
    Text: International 3X3R Rectifier PD-9S02# IR F 6 4 0 S /L p r e l im in a r y HEXFET Power MOSFET • • • • • • • Surface Mount I RF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature


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    RF640S) IRF640L) IRF640S) RF640 PDF

    IRF460 in TO220

    Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
    Text: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of


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    T0-240AA IRF460 in TO220 IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL PDF

    ATK Power Supply Schematic Diagram

    Abstract: No abstract text available
    Text: IRF640S N - C H A N N E L 2 0 0 V - 0 .1 50Í2 - 18A TO-263 MESH OVERLAY MOSFET TYPE V IR F 640 S . . . . d ss 200 V R d Id S o ii < 0 .1 8 Q. 18 A TYPICAL R D S (on) = 0.150 £2 EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


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    IRF640S N-CHANNEL200V-0 O-263 O-263 SC0B440 ATK Power Supply Schematic Diagram PDF

    RF640

    Abstract: IRF 640
    Text: *57 S G S -T H O M S O N !LiO T iQ £I TY PE IRF640 IRF640FI • . ■ . i r F 640 IR F 6 4 0 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS(on Id 200 V 200 V < 0.18 £2 < 0 .1 8 a 18 A 10 A TYPICAL RDs(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY


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    IRF640 IRF640FI IRF640FI RF640 IRF 640 PDF

    ld18a

    Abstract: No abstract text available
    Text: IR F640A Advanced Power MOSFET FEATURES B V DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V


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    F640A IRF640A QQ3b32fl O-220 7Tb4142 DD3b33D ld18a PDF

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 PDF

    FL110

    Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
    Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case


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    OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    1rf740

    Abstract: 1RF642 1rf730 1RF640 1RFD110 1RF840 IRF643 IRF644 IRF711 IRF712
    Text: - 254 - f M £ tt € ft X £ Vd s or Vd g Vg s fé <Ta=25cC Id Pd * /CH * /CH ÏI Ig s s V g s th) Id s s min 1D nA) (Ta=25‘C ) Id (on) D s(o n ) Vi>s= Vg s max ft g fs Ciss Coss Crss $1- B m % V g s =0 (max) *typ V g s (V) (0) *lyp (A) (nA) IRF642 IR


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    1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1rf730 1RF640 1RFD110 1RF840 IRF711 IRF712 PDF

    MO-D36AB

    Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
    Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for


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    MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542 PDF

    linear applications of power MOSFET IRF640

    Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
    Text: - Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


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    IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 PDF