photocell sensor
Abstract: No abstract text available
Text: DATASHEET Photon Detection VTT9812FH and VTT9814FH IR-Bloc Ambient Light Sensor IR-Blocking Silicon Phototransistor TM The IR-BlocTM family is the only ambient light sensor family on the market that comes in a low cost package with the IR-blocking feature incorporated in a
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VTT9812FH
VTT9814FH
VTT9814FH
VTT9812FH-Rev
xx-2012
photocell sensor
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IR phototransistor
Abstract: phototransistor application circuit IR transmission APP4467 MAX6848 4467
Text: Maxim > App Notes > Microprocessor supervisor circuits Keywords: Infrared, IR, phototransistor, microcontroller Jul 28, 2010 APPLICATION NOTE 4467 Wake up and hear the IR Abstract: Receiving infrared IR signals while conserving system power is difficult, and typically requires the inclusion of complex
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10kbps.
MAX6848
com/an4467
AN4467,
APP4467,
Appnote4467,
IR phototransistor
phototransistor application circuit
IR transmission
APP4467
4467
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methane gas sensor NDIR
Abstract: NDIR gas sensor NATURAL GAS SENSOR Thermopile ndir methane gas sensor "Pyroelectric Detectors" IR Sensor alarm circuit GAS SENSOR methane sensor pyroelectric sensor
Text: Overview The new IR Natural Gas Sensor by PerkinElmer was designed in response to OEMs’ needs for a highly reliable natural gas detection solution. The IR Natural Gas Sensor, part of PerkinElmer’s new GasDetect IR family, uses non-dispersive infrared radiation
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DTS0506P
methane gas sensor NDIR
NDIR gas sensor
NATURAL GAS SENSOR
Thermopile ndir
methane gas sensor
"Pyroelectric Detectors"
IR Sensor alarm circuit
GAS SENSOR
methane sensor
pyroelectric sensor
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Untitled
Abstract: No abstract text available
Text: QBED8160 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8160 Product: QBED8160 Date: March 27, 2014 Version# 1.0
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QBED8160
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Untitled
Abstract: No abstract text available
Text: QBED8340 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8340 Product: QBED8340 Date: March 27, 2014 Version# 1.0
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QBED8340
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5mm ir receiver
Abstract: IR 5MM receiver
Text: QBED8120 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8120 Product: QBED8120 Date: March 27, 2014 Version# 1.1
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QBED8120
5mm ir receiver
IR 5MM receiver
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SFH309
Abstract: SFH 30A
Text: SFH309 DAYLIGHT FILTER SFH309F SIEMENS SILICON NPN PHOTOTRANSISTOR FEATURES Daylight Filter-SFH309F Narrow Acceptance Angle, 24° High Reliability Low Cost Good Linearity No Testable Degradation Wide Temperature Range Matches IR Emitter SFH409 Same Package as IR Emitter SFH487
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SFH309
Filter-SFH309F
SFH409
SFH487
SFH309/F
SFH 30A
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Untitled
Abstract: No abstract text available
Text: NJL7302L-F3/F5 Ambient Light Sensor GENERAL DESCRIPTION The NJL7302L-F3/F5 is the phototransistor with spectral response similar to human eyes and wide directivity. FEATURES 1. High IR reduction IR reduction ratio 0.007 @850nm,λp=100% 2. Lead pin package
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NJL7302L-F3/F5
NJL7302L-F3/F5
850nm,
NJL7302L-F3
NJL7302L-F5
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BPV11F
Abstract: No abstract text available
Text: BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p 900nm .
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BPV11F
BPV11F
900nm)
D-74025
16-Oct-96
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Untitled
Abstract: No abstract text available
Text: NJL7302L-F3/F5 Ambient Light Sensor GENERAL DESCRIPTION The NJL7302L-F3/F5 is the phototransistor with spectral response similar to human eyes and wide directivity. FEATURES 1. High IR reduction IR reduction ratio 0.007 @850nm,λp=100% 2. Lead pin package
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NJL7302L-F3/F5
NJL7302L-F3/F5
850nm,
NJL7302L-F3
NJL7302L-F5
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BPV11F
Abstract: IC AN 8249
Text: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p
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BPV11F
BPV11F
900nm)
D-74025
20-May-99
IC AN 8249
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IR phototransistor
Abstract: AD672 INHX8M 009f 30D7 college Z 00103 PIC12C671 PIC12C672 0000004F
Text: Infra Red Infra Red Monitor Author: Mark Lemay Quebec, Canada email: [email protected] Block Diagram: PIC12C671 APPLICATION OPERATION The application of my IR monitor is to check an IR emitting device such as a TV Video remote controller. This IR monitor requires only 7 resistors, 4 LEDs, 1
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PIC12C671
PIC12C671
0000001E
0000008F
DS40160A/8
002-page
IR phototransistor
AD672
INHX8M
009f
30D7
college
Z 00103
PIC12C672
0000004F
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Untitled
Abstract: No abstract text available
Text: BPV11F VlSfrlAY Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-13A plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters X p ^ 900nm .
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BPV11F
BPV11F
900nm)
20-May-99
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p
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BPV11F
BPV11F
900nm)
D-74025
20-May-99
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BPV11F
Abstract: 8239 BPV11 Vishay Telefunken Phototransistor
Text: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p
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BPV11F
BPV11F
900nm)
D-74025
20-May-99
8239
BPV11
Vishay Telefunken Phototransistor
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p
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BPV11F
BPV11F
900nm)
D-74025
20-May-99
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Q62702-P1819
Abstract: NA010
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar
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BPV11F
Abstract: National 8250
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
2002/95/EC
2002/96/EC
18-Jul-08
National 8250
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Q62702-P1819
Abstract: 0083CA
Text: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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GPLY6965
Q62702-P1819
0083CA
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Q65110A2741
Abstract: SFH7250
Text: 2012-08-17 GaAlAs-Infrared-Emitter 880 nm and Si-Phototransistor GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor Version 1.0 (not for new design) SFH 7221 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (880 nm) and
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D-93055
Q65110A2741
SFH7250
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Q62702-P1819
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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OHF00312
GPL06965
Q62702-P1819
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
08-Apr-05
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TEMIC S289P
Abstract: S289P Telefunken Phototransistor
Text: S289P Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp >850nm. A plastic
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S289P
S289P
850nm.
D-74025
15-Jul-96
TEMIC S289P
Telefunken Phototransistor
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
D-74025
08-Mar-05
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