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    IR S28 Price and Stock

    Infineon Technologies AG IRS2807DSTRPBF

    IC GATE DRVR HI/LOW SIDE 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRS2807DSTRPBF Cut Tape 2,485 1
    • 1 $1.07
    • 10 $0.77
    • 100 $0.6136
    • 1000 $0.53158
    • 10000 $0.53158
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    IRS2807DSTRPBF Digi-Reel 2,485 1
    • 1 $1.07
    • 10 $0.77
    • 100 $0.6136
    • 1000 $0.53158
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    IRS2807DSTRPBF Reel 2,500
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    Avnet Americas IRS2807DSTRPBF Reel 20 Weeks 2,500
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    • 10000 $0.5029
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    Mouser Electronics IRS2807DSTRPBF 2,500
    • 1 $1.07
    • 10 $0.695
    • 100 $0.613
    • 1000 $0.532
    • 10000 $0.472
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    Infineon Technologies AG IRS2817DSTRPBF

    IC HVIC 8SOIC N
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    DigiKey IRS2817DSTRPBF Cut Tape 2,390 1
    • 1 $1.8
    • 10 $1.141
    • 100 $1.8
    • 1000 $0.55388
    • 10000 $0.55388
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    IRS2817DSTRPBF Digi-Reel 2,390 1
    • 1 $1.8
    • 10 $1.141
    • 100 $1.8
    • 1000 $0.55388
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    IRS2817DSTRPBF Reel 2,500
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    Avnet Americas IRS2817DSTRPBF Reel 20 Weeks 2,500
    • 1 -
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    • 1000 -
    • 10000 $0.5029
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    Mouser Electronics IRS2817DSTRPBF 2,424
    • 1 $1.44
    • 10 $0.97
    • 100 $0.68
    • 1000 $0.508
    • 10000 $0.452
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    EBV Elektronik IRS2817DSTRPBF 21 Weeks 2,500
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    Infineon Technologies AG IRS2890DSTRPBF

    IC GATE DRVR HALF-BRIDGE 14SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRS2890DSTRPBF Cut Tape 1,254 1
    • 1 $1.47
    • 10 $1.072
    • 100 $0.8635
    • 1000 $0.75402
    • 10000 $0.75402
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    IRS2890DSTRPBF Digi-Reel 1,254 1
    • 1 $1.47
    • 10 $1.072
    • 100 $0.8635
    • 1000 $0.75402
    • 10000 $0.75402
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    IRS2890DSTRPBF Reel 2,500
    • 1 -
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    • 10000 $0.72668
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    Avnet Americas IRS2890DSTRPBF Reel 20 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.72197
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    Mouser Electronics IRS2890DSTRPBF 2,473
    • 1 $1.47
    • 10 $0.972
    • 100 $0.863
    • 1000 $0.754
    • 10000 $0.649
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    Verical IRS2890DSTRPBF 26,506 443
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    • 1000 $0.7665
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    IRS2890DSTRPBF 2,505 34
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    • 100 $0.9313
    • 1000 $0.9275
    • 10000 $0.9275
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    Newark IRS2890DSTRPBF Cut Tape 1
    • 1 $1.73
    • 10 $1.22
    • 100 $0.954
    • 1000 $0.813
    • 10000 $0.813
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    Rochester Electronics IRS2890DSTRPBF 26,506 1
    • 1 $0.7214
    • 10 $0.7214
    • 100 $0.6781
    • 1000 $0.6132
    • 10000 $0.6132
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    Chip1Stop IRS2890DSTRPBF Cut Tape 2,505
    • 1 $0.734
    • 10 $0.731
    • 100 $0.726
    • 1000 $0.723
    • 10000 $0.723
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    EBV Elektronik IRS2890DSTRPBF 21 Weeks 2,500
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    Infineon Technologies AG IRS2807DSPBF

    IC GATE DRVR HI/LOW SIDE 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRS2807DSPBF Tube
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    Rochester Electronics LLC IRS2890DSPBF

    IRS2890 - GATE DRIVER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRS2890DSPBF Bulk 233
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    • 1000 $1.29
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    IR S28 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRS2890DSPBF Infineon Technologies Integrated Circuits (ICs) - PMIC - Gate Drivers - IC DRIVER HALF-BRIDGE 14SOIC Original PDF
    IRS2890DSTRPBF Infineon Technologies Integrated Circuits (ICs) - PMIC - Gate Drivers - IC DRIVER HALF-BRIDGE 14SOIC Original PDF

    IR S28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEMIC S289P

    Abstract: S289P Telefunken Phototransistor
    Text: S289P Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp >850nm. A plastic


    Original
    PDF S289P S289P 850nm. D-74025 15-Jul-96 TEMIC S289P Telefunken Phototransistor

    Untitled

    Abstract: No abstract text available
    Text: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally


    Original
    PDF S289P S289P 850nm. D-74025 20-May-99

    S289P

    Abstract: phototransistor, 850nm
    Text: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally


    Original
    PDF S289P S289P 850nm. D-74025 20-May-99 phototransistor, 850nm

    S289P

    Abstract: Telefunken Phototransistor
    Text: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally


    Original
    PDF S289P S289P 850nm. D-74025 20-May-99 Telefunken Phototransistor

    phototransistor no s289p

    Abstract: S289P s289
    Text: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally


    Original
    PDF S289P S289P 850nm. 18-Jul-08 phototransistor no s289p s289

    S289P

    Abstract: Telefunken Phototransistor
    Text: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally


    Original
    PDF S289P S289P 850nm. D-74025 20-May-99 Telefunken Phototransistor

    phototransistor no s289p

    Abstract: S289P
    Text: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally


    Original
    PDF S289P S289P 850nm. 08-Apr-05 phototransistor no s289p

    GP1U281Q

    Abstract: s28 sharp sharp ir sensor for TV sharp remote GP1U260R GP1U261R GP1U26R GP1U27R GP1U28Q GP1U28R
    Text: GP1U26R/27R/28R/28Q Series Anti Electromagnetic Induction Noise Type Compact IR Detecting Unit for Remote Control GP1U26R/GP1U27R Series GP1U28R/GP1U28Q Series • Features ■ Applications 1. Anti electromagnetic induction noise type 2. Compact case volume


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    PDF GP1U26R/27R/28R/28Q GP1U26R/GP1U27R GP1U28R/GP1U28Q GP1U28Q GP1U78Q) GP1U281Q s28 sharp sharp ir sensor for TV sharp remote GP1U260R GP1U261R GP1U26R GP1U27R GP1U28Q GP1U28R

    aeha

    Abstract: GP1U281R GP1U281Q GP1U271R home appliances with remote control GP1U27R GP1U28Q GP1U260R GP1U261R GP1U26R
    Text: GP1U26R/27R/28R/28Q Series Anti Electromagnetic Induction Noise Type Compact IR Detecting Unit for Remote Control GP1U26R/GP1U27R Series GP1U28R/GP1U28Q Series • Features ■ Applications 1. Anti electromagnetic induction noise type 2. Compact case volume


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    PDF GP1U26R/27R/28R/28Q GP1U26R/GP1U27R GP1U28R/GP1U28Q GP1U28Q GP1U78Q) aeha GP1U281R GP1U281Q GP1U271R home appliances with remote control GP1U27R GP1U28Q GP1U260R GP1U261R GP1U26R

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


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    PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    PDF S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    PDF G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE

    S1133-02

    Abstract: S1133-11 S1133-03 S2216 02 S2164 S1190 hamamatsu S1087 Hamamatsu S1087 light S2357 Hamamatsu S1133
    Text: HAMAMATSU Silicon CORP 1TE D • 42SU0*! 00 DE S 2t . 5 ■ 'p*|-S\ P h O tO d lO d e S Visible Light/Visible Light to IR Photometry Photosensitive surface Spectral Response Outlines Type No. Features S1087-01 For visible light to near IR S1087 For visible light


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    PDF 42SU0* S1087-01 S1087 S1087-03 S2164 S2164-01 S2357 S1133-01 S1133-11 S1133 S1133-02 S1133-03 S2216 02 S1190 hamamatsu Hamamatsu S1087 light Hamamatsu S1133

    54S38

    Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
    Text: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S


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    PDF 38510/M D012510 D011520 D011510 54S38 SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A

    Untitled

    Abstract: No abstract text available
    Text: _ S289P w m m f _ ▼ Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epi­ taxial planar Darlington phototransistor in a standard T-1 0 3 mm package. The epoxy package itself is an IR filter, spectrally


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    PDF S289P S289P 850nm. 20-May-99 S289P_

    LG color tv Circuit Diagram schematics

    Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
    Text: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS


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    PDF MIL-M-38510 38510/MACH 3186J Z501201 Z012510 Z011510 D022110 D022130 D021110 D021130 LG color tv Circuit Diagram schematics texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243

    ir remote power meter

    Abstract: spectrophotometer G1746
    Text: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry


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    PDF S1336/S S1226/S 1227ngth S2381, S2382 S5139, S6045 S5343, S5344 S5345 ir remote power meter spectrophotometer G1746

    d 6283 ic

    Abstract: da- 6286 hvr7
    Text: Microsemi High Voltage Rectifiers Part Number M icrosem i Division Package Outline ¡Type | Mil < Spec Data Sheet ID VR Volts IO IFSM ! V F @ 10 IR (Amps) (Amps) 1 (Volts) I (uA) trr (nsec) t LHV34H56 CHV34H56 JHV34H56 JHV36H56 CHV37H56 JHV37H56 PHV360 CHV21H60


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    PDF LHV34H56 CHV34H56 JHV34H56 JHV36H56 CHV37H56 d 6283 ic da- 6286 hvr7

    Untitled

    Abstract: No abstract text available
    Text: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3


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    PDF S1087 S1133 S1133-01 S1133-14 S1787-04 S1787-08 S1787-12 S4011 S2833 S5493

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


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    PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    S2833-01

    Abstract: S3407 S1087
    Text: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional Outline Package (P.43-46)/ Window Material*1 (mm) Active Effective Area Size Active Area (mm) (mm2) (nm) 320 — 730 1.3X1.3 1.6 S1133 /v 2.4X2.8 6.6 S1 087-01 ® /R


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    PDF S2164 S1133 S2833 S5493 S5627 S4011-02 S2833-01 S4797-01 S3407-01 560nm S3407 S1087

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


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    PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    S5557

    Abstract: S1087
    Text: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730


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    PDF S1087 S1133 S1087-01 S1787-12 S4011 S2833 S5493 S5627 S4011-02 S5557

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


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    PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01