Untitled
Abstract: No abstract text available
Text: 808nm Laser Diode 808nm IR Laser Diode LCU80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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808nm
LCU80E041A-preliminary
500mW
lcu80e041a
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808nm 500mw laser diode
Abstract: No abstract text available
Text: 808nm Laser Diode 808nm IR Laser Diode LCU80E046D-preliminary •Specifications 1 Device: (2) Structure: (3) Power Output: Laser Diode TO-5（ 9.0mm ）,With Pb free glass cap, no PD 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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808nm
LCU80E046D-preliminary
500mW
lcu80e046d
808nm 500mw laser diode
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808nm laser diode
Abstract: 808nm 500mw laser diode 808nm 500mw 808nm 300 mw laser diode u-ld-80 808nm laser diode 808nm 80E04
Text: U-LD-80E045A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E045A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With no glass cap, PD,easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)
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U-LD-80E045A-preliminary
808nm
500mW
808nm laser diode
808nm 500mw laser diode
808nm 500mw
808nm 300 mw laser diode
u-ld-80
laser diode 808nm
80E04
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808nm laser diode
Abstract: 808nm 808nm 500mw 300 mw IR Laser Diode 808nm 300 mw laser diode 808nm laser 820 nm laser diode 808 nm 1000 mw 808nm 500mw laser diode
Text: U-LD-80E041A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm)
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U-LD-80E041A-preliminary
808nm
500mW
808nm laser diode
808nm 500mw
300 mw IR Laser Diode
808nm 300 mw laser diode
808nm laser
820 nm laser diode
808 nm 1000 mw
808nm 500mw laser diode
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U-LD-80E044D-preliminary
Abstract: 808nm 500mw u-ld-80 500MW 808nm laser diode
Text: U-LD-80E044D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E044D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With no glass cap, no PD, easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)
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U-LD-80E044D-preliminary
808nm
500mW
808nin
U-LD-80E044D-preliminary
808nm 500mw
u-ld-80
500MW
808nm laser diode
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808nm 500mw
Abstract: 808 nm 1000 mw laser diode u-ld-80 808nm laser diode laser diode 808nm 808nm 500mw laser diode
Text: U-LD-80E046D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, no PD, easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)
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U-LD-80E046D-preliminary
808nm
500mW
808nm 500mw
808 nm 1000 mw laser diode
u-ld-80
808nm laser diode
laser diode 808nm
808nm 500mw laser diode
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TO18 Laser 808nm 300 mw
Abstract: IR Laser diode laser diode bare chip
Text: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80E0075-preliminary
808nm
886-3-g
TO18 Laser 808nm 300 mw
IR Laser diode
laser diode bare chip
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LCU83E051A
Abstract: laser diodes 300 mW
Text: Laser Diodes 830nm IR Laser Diode LCU83E051A-preliminary ϮSpecifications 1 Device: (2) Structure: Laser Diode TO-18ΰ 5.6mm ),With Pb free glass cap, PD ϮExternal dimensions(Unit : mm) ϮAbsolute Maximum Ratings(Tc=25к) Parameter Symbols Optical Output
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830nm
LCU83E051A-preliminary
divers-vis/lcu/lcu83e051a
LCU83E051A
laser diodes 300 mW
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 850nm IR Laser Diode LCU85E051A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18（ 5.6mm ),With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbols Optical Output
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850nm
LCU85E051A-preliminary
divers-vis/lcu/lcu85e051a
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IR-Laser-Diode 808nm 300mw
Abstract: 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode 808nm 300mW 8052-1313-AU 500MW ir laser
Text: 8052-1313-AU 808nm 500mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature
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8052-1313-AU
808nm
500mW
500mW
200mW
300mW)
IR-Laser-Diode 808nm 300mw
808nm 500mw
IR-Laser-Diode 500mW
IR-Laser-Diode 808nm
IR-Laser-Diode
808nm 300mw laser diode
808nm 300mW
8052-1313-AU
ir laser
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808nm 1000mW
Abstract: 1000mW laser diode IR-Laser-Diode 808nm 1000mW laser 808nm 808nm laser diode 1000mw IR-Laser-Diode IR-Laser-Diode 500mW 1000-mW 808nm 500mw
Text: 8013-2323-AU 808nm 1000mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature
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8013-2323-AU
808nm
1000mW
1000mW
500mW
808nm 1000mW
1000mW laser diode
IR-Laser-Diode 808nm
1000mW laser
808nm laser diode 1000mw
IR-Laser-Diode
IR-Laser-Diode 500mW
1000-mW
808nm 500mw
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Untitled
Abstract: No abstract text available
Text: SLD1332V Preliminary 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W
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SLD1332V
670nm,
500mW
SLD1332V
M-248
LO-11)
M-248
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Untitled
Abstract: No abstract text available
Text: SLD1332V Preliminary 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W
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SLD1332V
670nm,
500mW
SLD1332V
M-248
LO-11)
M-248
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laser diode lifetime
Abstract: SLD1332V C6802 IEC60825-1 ld 670nm
Text: SLD1332V 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W
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SLD1332V
670nm,
500mW
SLD1332V
M-248
LO-11)
laser diode lifetime
C6802
IEC60825-1
ld 670nm
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Untitled
Abstract: No abstract text available
Text: SLD1332V 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W
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SLD1332V
670nm,
500mW
SLD1332V
W/100
SS00259,
SS-00259
net/SonyInfo/procurementinfo/ss00259/
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LU96A74E-10R
Abstract: 974nm Oclaro 430mW 980 pump laser 940 nm 300mW laser diode
Text: Data Sheet High Power Uncooled 980nm Pump Laser Module in 10-Pin mini-BTF Package LU96*-10R Series Features: • Up to 500mW kink-free power over full operating temperature range Operating temperature range from -5°C to +75°C case Polarization maintaining (PM) fibre
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980nm
10-Pin
500mW
14pin
976nm
GR-468-CORE
970nm
D00355-PB
LU96A74E-10R
974nm
Oclaro
430mW
980 pump laser
940 nm 300mW laser diode
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SLD300
Abstract: SLD322V SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-25 SLD322V-3
Text: SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD322V
SLD322V
SLD300
M-248
LO-11)
SLD322V-1
SLD322V-2
SLD322V-21
SLD322V-24
SLD322V-25
SLD322V-3
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SLD322XT-24
Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-25 SLD322XT-3
Text: SLD322XT High Power Density 0.5W Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD322XT
SLD322XT
SLD300
65MAX
M-273
LO-10)
SLD322XT-24
SLD322XT-1
SLD322XT-2
SLD322XT-21
SLD322XT-25
SLD322XT-3
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Untitled
Abstract: No abstract text available
Text: S o n y _SLD303V 500mW High Power Laser Diode Description S L D 3 0 3 V are gain-guided, high-power laser diodes fabricated by MOCVD. M O C V D : Metal O rganic Chem ical V apor Deposition Features • High power Recommended power output • Sm all operating current
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SLD303V
500mW
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Untitled
Abstract: No abstract text available
Text: SLD303XT Sony. 500mW High Power Laser Diode D escription SLD303XT is a gain-guided, high-power laser diode w ith a built-in TE cooler. A new flat, square package w ith a low therm al resistance and an in-line pin configuration is employed. Fine tuning o f the wavelength is possible by
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500mW
SLD303XT
SLD303XT
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sony ic cx 770
Abstract: No abstract text available
Text: SLD303WT Sony, 500mW High Power Laser Diode D e s c r ip tio n S L D 3 0 3 W T is a gain-guided, high-power laser diode with a built-in T E cooler. Fine tuning of the w avelength is possible by controlling the laser chip temperature. Features • High power
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SLD303WT
500mW
sony ic cx 770
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laser diode sony cd
Abstract: laser diode 780 nm cd SLD303V SLD303V-1 SLD303V-2 SLD303V-21 SLD303V-3 300 mw IR Laser Diode
Text: SLD303V SONY, 500mW High Power Laser Diode For the availability of this product, please contact the sales office. D e s c rip tio n P a cka g e O u tlin e U n it: m m SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition
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SLD303V
500mW
SLD303V
450mW
laser diode sony cd
laser diode 780 nm cd
SLD303V-1
SLD303V-2
SLD303V-21
SLD303V-3
300 mw IR Laser Diode
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JD 803
Abstract: laser diode cd sony sl 803 A SLD303XT SLD303XT-1 SLD303XT-2 SLD303XT-21 SLD303XT-3 11SSI diode 4j
Text: SLD303XT SONY 500mW High Power Laser Diode_ For the availability of this product, please contact the sales office? D e scrip tio n S ID 3 0 3 X T is a gain-guided, high-power laser diode with a built-in T E cooler, A new fiat, square package
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SLD303XT
500mW
SLD303XT
450mW
JD 803
laser diode cd sony
sl 803 A
SLD303XT-1
SLD303XT-2
SLD303XT-21
SLD303XT-3
11SSI
diode 4j
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Untitled
Abstract: No abstract text available
Text: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current
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SLD303V
500mW
SLD303V
500mW
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