AN-994
Abstract: irf 210a
Text: IRF1405S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T HE AS S E MB L Y L INE "L " INT E RNAT IONAL RE CT IF IER L OGO Note: "P" in as s embly line
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IRF1405S/LPbF
F530S
AN-994.
AN-994
irf 210a
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irf 210a
Abstract: IRF 120A IRF 840 MOSFET irf 210 mosfet IRF 504 irf 840 if IRF 150a IRFB3206 smps 48v 12v irf 48v mosfet
Text: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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97097B
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
O-220AB
O-262
EIA-418.
irf 210a
IRF 120A
IRF 840 MOSFET
irf 210 mosfet
IRF 504
irf 840 if
IRF 150a
IRFB3206
smps 48v 12v
irf 48v mosfet
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Untitled
Abstract: No abstract text available
Text: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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97097B
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
O-220AB
O-262
EIA-418.
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PDF
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IRF 840 MOSFET
Abstract: IRFB3206PbF AN-994 IRFB3206 IRF Power MOSFET code marking irf 210a
Text: PD - 97097 IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ.
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Original
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IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
O-220AB
O-262
EIA-418.
IRF 840 MOSFET
IRFB3206PbF
AN-994
IRFB3206
IRF Power MOSFET code marking
irf 210a
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PDF
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IRF 840 MOSFET
Abstract: irf 210 mosfet irf 840 if irf 1040 IRFB3206
Text: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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7097A
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
O-220AB
IRFB3206PbF
IRFS3206PbF
O-262
10lbxin
IRF 840 MOSFET
irf 210 mosfet
irf 840 if
irf 1040
IRFB3206
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PDF
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IRF 840 MOSFET
Abstract: IRF 120A irf 210 mosfet irf 840 if irf 210a IRF 150a AN-994 97097B
Text: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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97097B
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
O-220AB
O-262
EIA-418.
IRF 840 MOSFET
IRF 120A
irf 210 mosfet
irf 840 if
irf 210a
IRF 150a
AN-994
97097B
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PDF
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irf 210 mosfet
Abstract: IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040
Text: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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7097A
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
O-220AB
O-262
EIA-418.
irf 210 mosfet
IRFB3206
AN-994
IRF 150a
IRF 840 MOSFET
irf 1040
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IRF GATE LOGIC
Abstract: AN-994 IRFR120 IRLR024N IRLU024N R120 U120 HEXFET POWER MOSFET IRF irf 210a
Text: PD - 95551B IRLR014NPbF IRLU014NPbF l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A
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95551B
IRLR014NPbF
IRLU014NPbF
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
IRF GATE LOGIC
AN-994
IRFR120
IRLR024N
IRLU024N
R120
U120
HEXFET POWER MOSFET IRF
irf 210a
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Untitled
Abstract: No abstract text available
Text: PD - 95551 IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description
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IRLR/U014NPbF
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
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F530S
Abstract: irf 5210 AN-994 irf 680
Text: IRF1405S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
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IRF1405S/L
AN-994.
F530S
irf 5210
AN-994
irf 680
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IRF540N
Abstract: IRFP140N
Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343B
IRFP140N
O-247
IRF540N
IRFP140N
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AN-994
Abstract: IRFR120 IRFU120 IRLR024N IRLU024N U120 U014
Text: PD - 95551A IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description
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5551A
IRLR/U014NPbF
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
information12/04
AN-994
IRFR120
IRFU120
IRLR024N
IRLU024N
U120
U014
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*lu024n
Abstract: irfu 210a
Text: PD - 95551A IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description
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Original
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IRLR/U014NPbF
5551A
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
information12/04
*lu024n
irfu 210a
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PDF
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irf 210a
Abstract: IRF 850 mosfet
Text: PD - 95490A IRF2204PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features l l l l l l l VDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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5490A
IRF2204PbF
irf 210a
IRF 850 mosfet
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AN-1005
Abstract: irf 5210 irf 131A
Text: PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D VDSS = 55V Benefits l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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PD-95331A
IRF1405SPbF
IRF1405LPbF
AN-994.
AN-1005
irf 5210
irf 131A
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Untitled
Abstract: No abstract text available
Text: PD-95331A IRF1405SPbF IRF1405LPbF HEXFET Power MOSFET Typical Applications l Industrial Motor Drive D VDSS = 55V Benefits l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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PD-95331A
IRF1405SPbF
IRF1405LPbF
AN-994.
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IRF1405L
Abstract: IRF1405S 95331 irf 131A
Text: PD-95331 IRF1405SPbF IRF1405LPbF AUTOMOTIVE MOSFET Typical Applications O O O O O O Electric Power Steering EPS Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Lead-Free Benefits O O O O O O HEXFET Power MOSFET D VDSS = 55V RDS(on) = 5.3mΩ
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PD-95331
IRF1405SPbF
IRF1405LPbF
AN-994.
IRF1405L
IRF1405S
95331
irf 131A
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2SD798
Abstract: toshiba TLX
Text: TOSHIBA 2SD798 V V=1 > NPNHfiffiitffê # - V> h > 2SD798 o -f o ¡SjltEE^ -f 7 51 > íñ X : mm ^ / : hFE = 1 5 0 0 (ft/h ( V c E = 2V , I e = 2A ) & ft± Æ fê (T a = 25°C) ijr @ p2 77 /E _ â i â £ ïd V : W ä to irf fH #r , i a u 9 ^ ^ - X fkl Ü J±
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OCR Scan
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2SD798
O-22QAB
SC-46
2-10A1A
100Xl00X2mm
2SD798
toshiba TLX
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KA-3022EC-4
Abstract: KA-3022YC-4 KA-3022SGC
Text: 6 2 . 0 - 9 2 3x2.2m m SING LE COLOR SURFACE Kingbright M O UNT LED LAMPS KA-3022-4.5SF Package Dimensions Features •R ECTANG ULAR PACKAGE, 3MM BY 2.2 MM BY 1.5MM THICKNESS. r~ <£ O to „ — \T> O O 0in oo ^ c m r- o z i 01 - •W H IT E REFLECTOR TO MAXIMIZE REFLECTION
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KA-3022-4
KA-3022SGT-4
KA-3022SGC-4
KA-3022EC-4
KA-3022YC-4
KA-3022SGC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TO SHIBA D I S C R E T E /OPTO TO SH IBA SEMICONDUCTOR TT DE § T D T O S O OOlbflfc.5 □ 99D 16862 F IE L D EFFEC T D” F 3 R-|/ TRA N SISTO R Y T F 6 2 1 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E (T T -M O S E )
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500nA
250uA
00A/us
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PDF
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2sc2562
Abstract: 2SA1012 A101 AC75 2SC2562 Toshiba
Text: 2SA1012 TOSHIBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.)
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2SA1012
2SC2562.
O-220AB
SC-46
2-10A1A
100Xl00X2mm
2sc2562
2SA1012
A101
AC75
2SC2562 Toshiba
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PDF
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UPS TOSHIBA
Abstract: 2SA1293 2SC3258 AC75
Text: TO SH IBA 2SA1293 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 293 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm ^3.6±0.2 ,1 0 .3 MAX. Low Collector Saturation Voltage : v CE(sat)= - ° - 4V (Max-)at :C = ~ 3A
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2SA1293
2SC3258.
UPS TOSHIBA
2SA1293
2SC3258
AC75
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2SA1293
Abstract: 2SC3258 AC75
Text: 2SA1293 TOSHIBA 2 S A 1 293 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at Ie = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.) Complementary to 2SC3258.
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2SA1293
2SC3258.
O-220AB
SC-46
2-10A1A
2SA1293
2SC3258
AC75
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PDF
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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