IRF 501
Abstract: IRF500N IRF500NC irf 260 IRF 530 125mm2 200NC W103 irf 150 irf free
Text: POWER 06.2002 PCN RESISTORS MAX. 500W TOL. 0.5% TC. 260ppm/ ЊC IRF FLAT TYPE METAL CLAD WIRE-WOUND RESISTORS Winding Method : Non Inductive Winding Type Wattage Rating Chassis Mounted W Resistance Range (V) IRF 100 NC 100 1ϳ560 Resistance Tolerance (%)
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260ppm/
55C155C
IRF100NCIRF250NC
3053053t
IRF300NCIRF500NC
4004003t
IRF 501
IRF500N
IRF500NC
irf 260
IRF 530
125mm2
200NC
W103
irf 150
irf free
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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irf 249 A
Abstract: No abstract text available
Text: IRFW/I720A Advanced Power MOSFET FEATURES B^DSS 400 V - ♦ Avalanche Rugged Technology 1 .8 Q CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFW/I720A
irf 249 A
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IRF 344
Abstract: IRF n 30v
Text: IRFW/I710A A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFW/I710A
IRF 344
IRF n 30v
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IRF MOSFET 100A 200v
Abstract: MOSFET 150 N IRF
Text: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFW/I740A
IRF MOSFET 100A 200v
MOSFET 150 N IRF
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D78C10
Abstract: PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36
Text: N E C ELECTRONICS INC Tfi D Ë J fc>457S2S 0D133ñfl ¿/PD78C10/C11/C14 8-BIT, SIN G LE-CH IP CMOS M ICROCOM PUTERS WITH A /D CO N VER TER NEC NEC Electronics Inc. -— 6427525 N E C S ELECTRO N ICS Description The/7PD78C10, A/PD78C11, and/nPD78C14 single-chip
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457S2S
0D133
uPD78C10
uPD78C11
uPD78C14
16-bit
256-byte
D78C10
PD78C10
PD78C11
PD78C10CW
78C10
irf 4110
13412
capacitor MKL
PD78C14G-36
PD78C11G-36
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pd7810
Abstract: PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480
Text: 4 ^ /X Y "* //PD7810/11 8-BIT, S IN G L E -C H IP n m o s m ic r o c o m p u te r s W ITH A / D C O N V E R T E R NEC Electronics Inc. Description Pin Configuration T h e ¿/PD7810 and ¿/PD7811 sin gle-chip m icro com puters integrate sophisticated on-chip peripheral
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uPD7810
uPD7811
/PD7810
/PD7811
16-bit
PD7810/11
256-byte
pd7810
PD7811
PD7810G-36
PD7811G-36
PD7811G
7810 NEC
R2M 45
F147
nec uPD7811
irf 480
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IRF530
Abstract: IRF532.533
Text: MICRO ELE CT RONICS-CO RP 1TE » bQTlTôfl QQQ07Ö1 1 »REUMINARY B l° |- ü IRF530 IRF531 IRF532 IRF533 I HIGH POWER MOSFETs PartNunfaw IRFS3Q IRF531 IRF532 IRFS33 APPLICATIONS l AI• .SWITCHING REGULATORS • I I I I • CONVERTERS VDS ^OS on 100V man
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QQQ07
IRF530
IRF531
IRF532
IRF533
IRF532.533
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se 140
Abstract: SE140 F3J48 SF3G48 SF3J48 USF3G48 USF3J48
Text: TOSHIBA SF3G48,SF3J48,USF3G48,USF3J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3G48, SF3J48, USF3G48, USF3J48 MEDIUM POWER CONTROL APPLICATIONS. Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
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SF3G48
SF3J48
USF3G48
USF3J48
SF3G48,
SF3J48,
USF3G48,
SF3G48-SF3J48
13-10J1B
se 140
SE140
F3J48
USF3J48
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1rf830
Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
Text: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS
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1RF830
1RF831
IRF832
IRF833
IRFS30
IRF631
IRFS32
IRF833
LG diode 831
IRF830.831
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Untitled
Abstract: No abstract text available
Text: SSH17N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V
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SSH17N60A
O-220-F-4L
0G3b333
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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NEC 7808
Abstract: 7809 A PI 505 7808 A PD7808 7809 pi uPD7809 PD7811 7808 nec
Text: SEC NEC Electronics Inc. yuP D 7807/08/09 HIGH-END, 8-B IT, SINGLE-CHIP NMOS MICROCOMPUTERS WITH COMPARATOR AND 8K ROM PRELIMINARY INFORMATION D escription Pin Configuration The yuPD7807//uPD7808///PD7809 single chip m icro com puter augm ents the high-end NEC fam ily of 8 -b it
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uPD7807
uPD7808
uPD7809
the//PD7811,
16-bit
//PD7808
NEC 7808
7809 A PI 505
7808 A
PD7808
7809 pi
PD7811
7808 nec
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MOSFET IRF 713
Abstract: No abstract text available
Text: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)
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M302271
F710/711/712/713
IRF71
OR/711R/712R/713R
IRF710,
IRF711,
IRF712,
IRF713
IRF710R,
IRF711R,
MOSFET IRF 713
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smd diode sm i7
Abstract: m33 tf 130 AF1EA
Text: Ip j .0 p p Q t i o n a l Provisional Data Sheet No. PD-9.1548 IOR Rectifier HEXFET POWER MOSFET IRFN240 N -C H A N N E L 200 Volt, 0.180 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The effi
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irf332
Abstract: IRF331 IRF3302
Text: H E D I 4ÖS5M52 G0Cm3t. Q | Data Sheet No. PD-9.302H INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF330 IRF331 IRF332 IRF333 Product Summary 400 Volt, 1.0 Ohm HEXFET TO-204AlA TO-3 Hermetic Package
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S5M52
T-39-11
IRF330
IRF331
IRF332
IRF333
O-204
G-119
IRF330,
IRF331,
IRF3302
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IC8048
Abstract: cwt 235 atx D78C1 78C17 HS1ND JRC 8048B UPD78C17CW 78C18 citi coil UPD7801
Text: M O S *W 5]S& M O S Integrated Circuit / ¿ P D 7 8 C 1 7 , 7 8 C 18 8 t y h " > > ? \ s ? - 'V 7 ° ' — 9 (A/D n > '< — f i t à ) //PD78C18Ü, 16 h* >y h ALU, ROM, RAM, A / D n > /< - ^ , >f r? /> f -<> h • fj ^ > ÿ , ïüffl U $ & { 3 ^ { z 3 1 K ^ M t ' i t i o / ï ' J (ROM/RAM) £
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uPD78C18
//PD78C18fi,
//PD78C17
//PD78C18
IEU-738
159ffico^
IC8048
cwt 235 atx
D78C1
78C17
HS1ND
JRC 8048B
UPD78C17CW
78C18
citi coil
UPD7801
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RA5E
Abstract: SRFE 1126 IRF 024 RY 227 Tf 227 10A 016T NEC CPUii k7d7 upd78cp14 ZPD* ITT mkad
Text: M O S Integrated C irc u it PD78C14A pPD 7 8C 14 A iil6b y h A L U , ROM, RAM, A /D n 's*<—9, 7/u • -i § !> CMOS 8 t' v 1- •-v-f 1“ * ', %M.tt9 4 -v/'f ' O o n > h° ^ X7 f- • t ^ > 9 , tilfflx 'J h &X'<T>9 i ij RO M /R A M ) £t£3ftT" 1 ^ T 't o ^ P D 7 8 C 1 4 A i± C M O S i» j t ^ ^ * f im # 'l*
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uPD78C14A
78C18
IEU-738
87AD->
16384WX
256WX
RA5E
SRFE 1126
IRF 024
RY 227 Tf 227 10A
016T
NEC CPUii
k7d7
upd78cp14
ZPD* ITT
mkad
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ZTE MF 180 circuit
Abstract: JVC 0J HCJ crystal PD-50p ntl9 kyx 28 lt024 sumi jo 87AD uPD78C18
Text: A Ü *> oo ^ co Cd al I M I °» Cd M t—* Kl o< oj O 3 oo > S [NJ O r>i $* C/3 4 üSl4 V njg <5 V' V 'S ►d ö •O OO O i—i oo > a 4* X > Ö s U V » X1 1 Oi 4^- « A s wT- 00 -X» 4 ^ >*' ^ rj Pt m s V >i 4 V -A V' x >i A sil ^ K' \r ■fc r V 00 t
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Untitled
Abstract: No abstract text available
Text: H A R R IS sem iconductor IR F R 4 2 0 , IR F R 42 1 , IR F R 4 2 2 , ¡R F U 4 2 0 , IR F U 4 2 1 , IR F U 4 2 2 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance
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IRF 250
Abstract: MAX365CPE
Text: 19-0181; Rev 0; 9/93 Precision, Quad, SPST Analog S w itches The MAX364/MAX365 are fabricated with Maxim's new improved 44V silicon-gate process. Design improve m ents g u a ra n te e e xtre m e ly low c h a rg e in je c tio n 10pC , low power consumption (35nW), and electro
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MAX364/MAX365
MAX364
MAX365
500pA
250ns
170ns)
X364/M
IRF 250
MAX365CPE
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irf 4903
Abstract: irf 250n 114-5042
Text: A M Application Specification R m m m 114-5042 28 JAN 00 m Rev. E2 Crim ping of “250” Series, Positive Lock Receptacle Contact 25 0 v h X -Jl v f l f ' U y ì - m 0 Contents First 7 pages following this top sheet English version Next 7 pages Japanese version
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FJOO-OI59-00
J-002
irf 4903
irf 250n
114-5042
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diode U1J
Abstract: NE83Q92 NE83Q92A NE83Q92D NE83Q92N NE83Q93
Text: Philips Semiconductors Data Communications Products " • bbS3=124 o c m b f l l 31fl ■ SIC3 Preliminary specification “ ■— ■■■ m m m m m m w— mmm Low-power coaxial Ethernet transceiver NE83Q92 DESCRIPTION FEATURES The NE83Q92 is a low power coaxial
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bb53T24
NE83Q92
NE83Q92
10base5)
10base2)
100ns
diode U1J
NE83Q92A
NE83Q92D
NE83Q92N
NE83Q93
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NE83Q93
Abstract: NE83Q94DK QQR471 QQT4712 ethernet transformer 10base-2 "Ethernet Transceiver"
Text: • bbsg^M o c m 7 ii iss « s i c s Philips Semiconductors Data Communications Products Preliminary specification Miniature coaxial Ethernet transceiver DESCRIPTION NE83Q94 PIN CONFIGURATION The NE83Q94 is a low power coaxial transceiver interface CTI for
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NE83Q94
NE83Q94
10base5)
10base2)
100ns
00T4720
NE83Q93
NE83Q94DK
QQR471
QQT4712
ethernet transformer 10base-2
"Ethernet Transceiver"
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