Equivalent IRF 740
Abstract: IRF P CHANNEL MOSFET 100v IRFR3911 IRF P CHANNEL MOSFET 10A 100V AN1001 EIA-541 IRFU120 IRFU3911 R120 U120
Text: PD - 95373A IRFR3911PbF IRFU3911PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5373A
IRFR3911PbF
IRFU3911PbF
AN1001)
IRFR3911
IRFU3911
AN-994.
Equivalent IRF 740
IRF P CHANNEL MOSFET 100v
IRFR3911
IRF P CHANNEL MOSFET 10A 100V
AN1001
EIA-541
IRFU120
IRFU3911
R120
U120
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AN1001
Abstract: EIA-541 IRFR3911 IRFU120 IRFU3911 R120 U120 4.5v to 100v input regulator
Text: PD - 95373A IRFR3911PbF IRFU3911PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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5373A
IRFR3911PbF
IRFU3911PbF
AN1001)
IRFR3911
IRFU3911
AN-994.
AN1001
EIA-541
IRFR3911
IRFU120
IRFU3911
R120
U120
4.5v to 100v input regulator
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IRF MOSFET 100A 200v
Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
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IRF5801PbF
10sec.
IRF MOSFET 100A 200v
IRF 100A
IRF n 30v
IRF5851
MOSFET 150 N IRF
IRF5802
IRF5803
IRF5804
IRF5805
IRF5806
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IRFR9120N
Abstract: IRFU9120N
Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω
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PD-95020A
IRFR9120NPbF
IRFU9120NPbF
IRFR9120N)
IRFU9120N)
-100V
IRFR/U9120NPbF
O-252AA)
EIA-481
EIA-541.
IRFR9120N
IRFU9120N
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irf 100v 300A
Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω
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PD-95020A
IRFR9120NPbF
IRFU9120NPbF
IRFR9120N)
IRFU9120N)
-100V
EIA-481
EIA-541.
EIA-481.
irf 100v 300A
MOSFET IRF 630
IRFR9120N
IRFU9120N
IRFR9120NPBF
IRF P-Channel mosfet
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Untitled
Abstract: No abstract text available
Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω
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PD-95020A
IRFR9120NPbF
IRFU9120NPbF
IRFR9120N)
IRFU9120N)
-100V
EIA-481
EIA-541.
EIA-481.
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AN1001
Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-95474A
IRF5801PbF
AN1001)
10sec.
AN1001
IRF5803
IRF5804
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF AN1001
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irf 540 mosfet
Abstract: MOSFET IRF 941 MOS-FET IRF 540 IRFS4310PBF AN-994 irf 418 e980 MOSFET 65V 75A MOSFET IRF 540 irfb4310pbf
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
EIA-418.
irf 540 mosfet
MOSFET IRF 941
MOS-FET IRF 540
IRFS4310PBF
AN-994
irf 418
e980
MOSFET 65V 75A
MOSFET IRF 540
irfb4310pbf
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irfp9140npbf
Abstract: IRF9540N
Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier
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IRFP9140NPbF
-100V
O-247
IRF9540N
-470A/
O-247AC
IRFPE30
irfp9140npbf
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IRF Power MOSFET code marking
Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076B IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple
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-95076B
IRFR430APbF
IRFU430APbF
IRFR430A
IRFU430A
EIA-481
EIA-541.
EIA-481.
IRF Power MOSFET code marking
IRF 50A
EIA-541
IRFR430A
IRFU430A
R120
IRF 250V 100A
4.5v to 100v input regulator
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IRF Power MOSFET code marking
Abstract: EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC
Text: PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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94356B
IRFR430A
IRFU430A
EIA-481
EIA-541.
EIA-481.
IRF Power MOSFET code marking
EIA-541
IRFR430A
IRFU430A
R120
IRF MOSFET 10A P
94356
IRF 250V 100A
IRF 50A
IRF GATE LOGIC
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Untitled
Abstract: No abstract text available
Text: PD - 96906C IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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96906C
IRFB4610
IRFS4610
IRFSL4610
O-220AB
O-262
Cur26)
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EIA-541
Abstract: IRFR420A IRFU120 IRFU420A R120 U120 U420
Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple
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5075A
IRFR420APbF
IRFU420APbF
IRFR420A
IRFU420A
EIA-481
EIA-541.
EIA-481.
EIA-541
IRFR420A
IRFU120
IRFU420A
R120
U120
U420
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MOSFET IRF 380
Abstract: IRF 504 IRFB4610PbF AN-994 IRF MOSFET 10A P IRF MOSFET 100A 100v IRF igbt gate driver
Text: PD - 95936A IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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5936A
IRFB4610PbF
IRFS4610PbF
IRFSL4610PbF
O-262
O-220AB
EIA-418.
MOSFET IRF 380
IRF 504
IRFB4610PbF
AN-994
IRF MOSFET 10A P
IRF MOSFET 100A 100v
IRF igbt gate driver
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AN-994
Abstract: MOSFET 65V 75A irf 540 mosfet IRFS4310PBF
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
AN-994.
AN-994
MOSFET 65V 75A
irf 540 mosfet
IRFS4310PBF
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IRFB4310
Abstract: irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A
Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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6894A
IRFB4310
IRFS4310
IRFSL4310
O-220
O-220AB
O-262
IRFB4310
irf 540 mosfet
IRFS4310
AN-994
IRFSL4310
irf 30A
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Untitled
Abstract: No abstract text available
Text: PD - 96906A IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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6906A
IRFB4610
IRFS4610
IRFSL4610
O-220AB
O-262
EIA-418.
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IRFB4310
Abstract: irf 540 mosfet AN-994 IRFS4310 IRFSL4310 irf 100v 100A
Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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6894A
IRFB4310
IRFS4310
IRFSL4310
O-220
O-220AB
O-262
IRFB4310
irf 540 mosfet
AN-994
IRFS4310
IRFSL4310
irf 100v 100A
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IRFS4310
Abstract: AN-994 SL4310 irf 540 mosfet IRFS4310PBF
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
EIA-418.
IRFS4310
AN-994
SL4310
irf 540 mosfet
IRFS4310PBF
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F9530
Abstract: 9533E IRF9530
Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated
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OCR Scan
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IRF9530,
IRF9533
-100V
IRF9531,
IRF9532
IRF9533
IRF9532,
F9533
92CS-43327
F9530
9533E
IRF9530
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1rf510
Abstract: 1RF51
Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ
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OCR Scan
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M3DE271
IRF510/511/512/513
IRF51OR/511R/512R/513R
IRF510,
IRF511,
IRF512,
IRF513
IRF510R,
IRF511R,
IRF512R
1rf510
1RF51
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Untitled
Abstract: No abstract text available
Text: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited
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OCR Scan
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IRF120,
IRF121
IRF122,
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Untitled
Abstract: No abstract text available
Text: 4 3 D5 2 7 1 0053003 TFT • SI HARRIS HAS IRF130/ 131/ 132/133 IRF130R/1 31 R /132R /133R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-2Q4AA • 12A and 14A, 80V - 100V • rDS on = 0 .1 6 fi and 0 .2 3 ft SOURCE • Single Pulse Avalanche Energy Rated*
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OCR Scan
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IRF130/
IRF130R/1
/132R
/133R
IRF130,
1RF131,
IRF132,
IRF133
IRF130R,
IRF131R,
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IRF9511
Abstract: No abstract text available
Text: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated
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OCR Scan
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IRF9510,
IRF9511
IRF9513
-220A
-100V
IRF9511,
IRF9512
IRF9513
92CS-43275
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