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    IRF150 MOSFET Search Results

    IRF150 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    IRF150 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    circuits of IRF150

    Abstract: MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764
    Text: PD - 90337F IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International


    Original     		90337F IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) parallelin52-7105 circuits of IRF150 MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764 PDF

    IRF 543 MOSFET

    Abstract: irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G
    Text: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International


    Original     		90337G IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) --TO-204AE IRF 543 MOSFET irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G PDF

    IRF150

    Abstract: circuits of IRF150
    Text: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International


    Original     		90337G IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) O-204AE IRF150 circuits of IRF150 PDF

    IRF150

    Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
    Text: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 | “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, |RF152, IRF153


    OCR Scan     		7S001 IRF150, IRF151, RF152, IRF153 IRF152 IRF153 IRF150 R01E MOSFET IRF150 IRF151 IRF162 IRF160 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF150 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


    Original     		IRF150 300ms, PDF

    IRF150 To220 package

    Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
    Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232


    OCR Scan     		Q0D01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF150 To220 package irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V PDF

    IRF150

    Abstract: IRF151 IRF150 MOSFET MOSFET IRF150 IRF150-152 IRF150 "on semiconductor"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF150 IRF151 IRF152 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		IRF150 IRF151 IRF152 IRF151. IRF150 MOSFET MOSFET IRF150 IRF150-152 IRF150 "on semiconductor" PDF

    irf150

    Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
    Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150 PDF

    MOSFET IRF150

    Abstract: irf150 IRF150 MOSFET
    Text: IRF150 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


    Original     		IRF150 state3700 300ms, MOSFET IRF150 irf150 IRF150 MOSFET PDF

    irf150

    Abstract: IRF150 MOSFET LS 5087 MOSFET IRF150 IRF150 To3 package IRF150 "on semiconductor" IRF151 IRF152 IRF153 IRF-150
    Text: 98D 0 5084 7964142 S A M SUNG SEMICONDUCTOR. INC : deJlTTbMma DD0SDÛ4 a D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 ti414E IRF150 MOSFET LS 5087 MOSFET IRF150 IRF150 To3 package IRF150 "on semiconductor" IRF-150 PDF

    IRF150

    Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
    Text: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		7Tti414E IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 00GS435 IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi PDF

    power 22D

    Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
    Text: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233


    OCR Scan     		QDD01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 power 22D irf64d IRF740 IRFP240 IRFP450 bridge IRF350 PDF

    TRANSISTORS 132 GD

    Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
    Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150 PDF

    DJ38

    Abstract: MOSFET IRF150
    Text: im SEM E IRF150 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 38A I D(cont) 0.055Q ^D S (on) FEATURES M * 20.32 (0.800) 118.80 a an in ia < w (0.740) • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ • SIMPLE DRIVE REQUIREMENTS


    OCR Scan     		IRF150 150mJ DJ38 MOSFET IRF150 PDF

    IRF150

    Abstract: IRF150 MOSFET MOSFET IRF150 IRF-150
    Text: IRF150, IRF151, IRF152, IRF153 HARRIS S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF150, IRF151, IRF152, IRF153 TA17421. RF152, IRF150 IRF150 MOSFET MOSFET IRF150 IRF-150 PDF

    IRF150

    Abstract: MOSFET IRF150 12V 40A voltage regulators IRF152
    Text: IRF150, IRF151, IRF152, IRF153 S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF150, IRF151, IRF152, IRF153 TA17421. IRF150 MOSFET IRF150 12V 40A voltage regulators IRF152 PDF

    IRF162

    Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
    Text: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		IRF150, IRF151, IRF152, IRF153 IRF152 IRF153 75BVDSS IRF162 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 PDF

    IRF150

    Abstract: IRF250 irf054 IRF350
    Text: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR N-CHANNEL HERMETIC SURFACE MOUNT POWER MOSFETS TYPE NUMBER BVDSS DRAIN TO SOURCE BREAKDOWN VOLTAGE VOLTS <D CONTINUOUS DRAIN CURRENT (AMPS) PD MAXIMUM POWER DISSIPATION (WATTS) r DS (ON) STATIC DRAIN TO SOURCE ON


    OCR Scan     		SHD2301 SHD2191 SHD2181 SHD2181A SHD2181B SHD2302 SHD2192 SHD2182 SHD2182A SHD2182B IRF150 IRF250 irf054 IRF350 PDF

    71 DT4

    Abstract: SHD2251 IRFY044 IRFY140 IRFY240 IRFY340 IRFY440 SHD2261 SHD2262 SHD2263
    Text: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE ~ ~ CONTINUOUS DRAIN CURRENT MAXIMUM POWER DISSIPATION 'd PD 60 100 200 400 500 800 900 1000 100 100 100 200


    OCR Scan     		O-254, O-257) SHD2261 IRFY044 SHD2262 IRFY140 SHD2263 IRFY240 SHD2264 IRFY340 71 DT4 SHD2251 IRFY044 IRFY140 IRFY240 IRFY340 IRFY440 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4302571 00530^3 AMI • S] HARRIS HAS IRF15 0 /1 5 1 /1 5 2 /1 53 IRF15 OR/151R/152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Q 4A E • 33A and 40A, 60V - 100V • r0S on = 0 .0 5 5 fl and 0 .0 8 il y SOURCE


    OCR Scan     		IRF15 OR/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, PDF

    circuits of IRF150

    Abstract: IRF150-152
    Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*


    OCR Scan     		IBM50/151/152/153 IRF150R/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, IRF153R circuits of IRF150 IRF150-152 PDF

    MOSFET IRF150

    Abstract: IRF150 MOSFET HA711
    Text: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International


    OCR Scan     		T-39-13 IRF15Ü IRF151 IRF15S IRF153 MOSFET IRF150 IRF150 MOSFET HA711 PDF

    IRF150 MOSFET AMP circuit

    Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
    Text: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given


    Original     		IRF150 IRF150 MOSFET AMP circuit forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 PDF

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		IRF9140 IRF9230 IRF9240 irf440 PDF