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    transistor irf250

    Abstract: IRF251 IRF250..251 D86FN2 25 fmr 160 IRF250 C063
    Text: M U T FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF250.251 D86FN2.M2 30 AMPERES


    OCR Scan     		PDF IRF250 D86FN2 Excell00 00A//US, transistor irf250 IRF251 IRF250..251 25 fmr 160 C063