IRF3415
Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
Text: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
91477D
IRF3415
O-220
IRF3415
IRF3415 circuit
IRF3415 equivalent
1810ms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
91477E
IRF3415
O-220
O-220AB
|
PDF
|
IRF34
Abstract: IRF3415 mosfet irf3415
Text: FOR REVIEW ONLY IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
IRF3415
O-220
O-220AB
IRF34
IRF3415
mosfet irf3415
|
PDF
|
AM 22A
Abstract: 1477B IRF3415
Text: Previous Datasheet Index Next Data Sheet PD 9.1477B IRF3415 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description
|
Original
|
1477B
IRF3415
O-220
AM 22A
1477B
IRF3415
|
PDF
|
IRF3415
Abstract: K 9008
Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
91477E
IRF3415
O-220
poIRF3415
O-220AB
IRF3415
K 9008
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
91477E
IRF3415
O-220
O-220AB
|
PDF
|
IRFZ44N complementary
Abstract: IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent
Text: 108872 UltraFet LC 00045 8/29/00 11:16 AM Page 1 Fall 2000 Update UltraFET Summary Don’t Forget Intersil’s popular UltraFET family of over 200 products, from 30V to 200V. Find the perfect match for your circuit on our Line Cards: Automotive LC-00005.1,
|
Original
|
LC-00005
LC-00011
HUF75823D3
HUF75823D3S
HUF75829D3
HUF75829D3S
HUF75831SK8
HUF75842P3
HUF75842S3S
HUF75852G3
IRFZ44N complementary
IRFz44n equivalent
HRF3205 equivalent
IRF3710 equivalent
IRF3205 equivalent
IRFP064N equivalent
IRFP064N
IRF3205 COMPLEMENTARY
IRF3205
IRF3415 equivalent
|
PDF
|
IRG41BC20W
Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles
|
Original
|
O-220
IR2130
230VAC
IR2133
460VAC
IR2233
IR2137/IR2171
IRG41BC20W
IRG41BC20UD
Drive circuit for IGBT using IR2130
IR2184 application notes
IR2110 driver CIRCUIT FOR INVERTERS
DC MOTOR SPEED CONTROL USING IGBT
IRG41BC30W
IR2181 application notes
IR2103 bldc driver
1KW dc motor
|
PDF
|
IRF3415S
Abstract: AN-994 IRF3415 IRF3415L
Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A
|
Original
|
91509C
IRF3415S/L
IRF3415S)
IRF3415L)
IRF3415S
AN-994
IRF3415
IRF3415L
|
PDF
|
AN-994
Abstract: IRF3415 IRF3415S IRF530S st ld 33 22A17
Text: Previous Datasheet Index Next Data Sheet PD- 9.1509A IRF3415S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 150V
|
Original
|
IRF3415S
AN-994
IRF3415
IRF3415S
IRF530S
st ld 33
22A17
|
PDF
|
AN-994
Abstract: IRF3415 IRF3415L IRF3415S
Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A
|
Original
|
91509C
IRF3415S/L
IRF3415S)
IRF3415L)
AN-994
IRF3415
IRF3415L
IRF3415S
|
PDF
|
GA400GD25S
Abstract: ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137
Text: +200 / -460 mA 12.5 - 25V 12.5 - 25V with with UnderUnderVoltage Voltage Lockout Lockout UP TO 1200V — IR2233 / 2235 10 - 25V 10 - 25V with with +200 / -420 UVLO UVLO mA 12 - 25V 12 - 25V with with UVLO UVLO Output Swing = Supply Voltage Output Swing = Supply
|
Original
|
IR2108
IRFBA1404P
IRF1404S
IRF1404
IRF1404L
IRF1405S
IRF1405
IRF1405L
IRFP2907
IRFPS3810
GA400GD25S
ir2184 circuit
IR211X
IRG4BC30KD-S
IR2213 DIE
600V 20A 50KHz
IR2136
GA250
IRFP3415
IR2137
|
PDF
|
IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
|
Original
|
O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
|
PDF
|
STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
|
Original
|
100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
|
PDF
|
|
|
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|
PDF
|
b-bios
Abstract: No abstract text available
Text: PD 9.1477C International ICR Rectifier IRF3415 PRELIMINARY HEXFET^ Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS= 150V R DS on = Description Id = 0.042Í2
|
OCR Scan
|
1477C
IRF3415
O-220
b-bios
|
PDF
|
RF1010
Abstract: diode body marking A 4
Text: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V
|
OCR Scan
|
IRF3415
O-220
RF1010
diode body marking A 4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2
|
OCR Scan
|
PD-91477D
IRF3415
O-220
|
PDF
|
IRF3415 equivalent
Abstract: IRFI3415 IRF1
Text: P D - 9.1624 International IG R Rectifier IRFI3415 PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated VDss = 150V
|
OCR Scan
|
IRFI3415
IRF3415 equivalent
IRFI3415
IRF1
|
PDF
|
IRF3415 equivalent
Abstract: pn 222A IRFI3415 IRF3415 IRFI840G
Text: International IOR Rectifier pd-9.1624 IRFI3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS D Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V Ds s = 1 5 0 V
|
OCR Scan
|
IRFI3415
O-220
IRF3415 equivalent
pn 222A
IRFI3415
IRF3415
IRFI840G
|
PDF
|
MARKING J9B
Abstract: No abstract text available
Text: PD- 9.1509B International I R Rectifier IRF3415S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description V d s s = 15 0 V
|
OCR Scan
|
1509B
IRF3415S
MARKING J9B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91509C International IGR Rectifier IRF3415S/L HEXFET Power MOSFET • • • • • • A dvanced Process Technology Surface M ount IRF3415S Low-profile through-hole (IRF3415L) 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated
|
OCR Scan
|
PD-91509C
IRF3415S/L
IRF3415S)
IRF3415L)
|
PDF
|
