irf520 mosfet
Abstract: IRF520 circuit diagram irf520 irf520 switch transistor equivalent irf520 MOSFET IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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IRF520
O-220
irf520 mosfet
IRF520
circuit diagram irf520
irf520 switch
transistor equivalent irf520
MOSFET IRF520
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circuit diagram irf520
Abstract: GC233
Text: SGS-THOMSON IRF520 IRF520FI IttJtSTMtKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI Voss R d S o ii Id 100 V 100 V 0.27 Q 0.27 Q 10 A 7 A • . ■ . . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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IRF520
IRF520FI
IRF520FI
O-220
ISOWATT220
IRF520/FI
GC2339G
GC20260
GC20270
circuit diagram irf520
GC233
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irf520 mosfet
Abstract: irf520 switch IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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IRF520
O-220
irf520 mosfet
irf520 switch
IRF520
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IRF520 mosfet
Abstract: IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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O-220
IRF520
O-220
IRF520 mosfet
IRF520
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PDF
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IRF520
Abstract: transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
Text: IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.27 Ω < 0.27 Ω 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF520
IRF520FI
100oC
175oC
O-220
ISOWATT220
IRF520
transistor IRF520
circuit diagram irf520
IRF520 application note
IRF520FI
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PDF
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Untitled
Abstract: No abstract text available
Text: 7^237 G G M S b 4 b 50b • S G T H SGS-THOMSON [MOœmigTOôfflDûi IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI . . ■ . . . . V d ss RDS on Id 100 V 100 V < 0.27 a < 0.27 Q 10 A 7 A TYPICAL RDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY
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IRF520
IRF520FI
IRF520/FI
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PDF
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IRF520
Abstract: irf521 IRF523 F522
Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF520/521/522/523
IRF520
IRF521
IRF522
IRF523
IRF520/5217522/523
F522
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PDF
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1RF520
Abstract: IRFS20 1rf520 transistor RF521 transistor IRF520 IRF522 mosfet 1000 amper IRFS22 IRF520 IRF521
Text: -F ile N u m b e r Standard Power MOSFETs IRF520, IRF521, IRF522, IRF523 1574 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL ENHA N C EM EN T MODE
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IRF520,
IRF521,
IRF522,
IRF523
0V-100V
IRF522
IRF523
1RF520
IRFS20
1rf520 transistor
RF521
transistor IRF520
mosfet 1000 amper
IRFS22
IRF520
IRF521
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irf52 0
Abstract: No abstract text available
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()
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IRF520
IRF52
O220AB
IRF520
irf52 0
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irf521
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF520/521
IRF520
IRF521
002fl7SD
irf521
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PDF
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TP10N10E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF520
b3b725H
TP10N10E
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRF520
O-220AB
TB334
TA09594.
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PDF
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Power MOSFETs Application Notes irf520
Abstract: IRF520 application note irf520 mosfet IRF520 TB334
Text: IRF520 Data Sheet January 2002 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF520
TA09594.
Power MOSFETs Application Notes irf520
IRF520 application note
irf520 mosfet
IRF520
TB334
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PDF
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IRF520
Abstract: irf520 mosfet mosfet irf520 irf521 power MOSFET IRF520
Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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IRF520/521/522/523
O-220
IRF520
IRF521
IRF522
IRF523
IRF520/521Z522/523
irf520 mosfet
mosfet irf520
power MOSFET IRF520
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PDF
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IRF520
Abstract: International Rectifier IRF520 IRF52
Text: PD-9.313K International S Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V R DS on = 0 .2 7 Q
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OCR Scan
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IRF520
0-27Q
O-220
IRF520
International Rectifier IRF520
IRF52
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PDF
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IRF521
Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
Text: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)
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773STS
IRF520
IRF521
IRF522
IRF523
O-220
IRF522
IRF523
RP523
R520
R521
irf520 power
G-D-S TO-92
TO-220 3 lead bend
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PDF
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irf520 mosfet
Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
O-220
O-220
18-Jul-08
irf520 mosfet
IRF520
Power MOSFETs Application Notes irf520
SiHF520-E3
1IRF520
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PDF
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transistor IRF520
Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF520
TA09594.
transistor IRF520
irf520 mosfet
37ag
transistor equivalent irf520
IRF520
TB334
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PDF
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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PDF
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1RF520
Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
Text: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2
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OCR Scan
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IRF520
T0-220
1RF520
AVW smd
smd ht1
AN-994
IRF520S
SMD-220
ScansUX1012
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PDF
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM
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OCR Scan
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71TMHD
IRF520
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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PDF
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IRF520 application note
Abstract: IRF520 IRF520P 910170
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF520 application note
IRF520
IRF520P
910170
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PDF
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International Rectifier IRF520
Abstract: No abstract text available
Text: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRF520
O-220
S54S2
International Rectifier IRF520
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PDF
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