irf520 mosfet
Abstract: IRF520 circuit diagram irf520 irf520 switch transistor equivalent irf520 MOSFET IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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IRF520
O-220
irf520 mosfet
IRF520
circuit diagram irf520
irf520 switch
transistor equivalent irf520
MOSFET IRF520
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circuit diagram irf520
Abstract: GC233
Text: SGS-THOMSON IRF520 IRF520FI IttJtSTMtKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI Voss R d S o ii Id 100 V 100 V 0.27 Q 0.27 Q 10 A 7 A • . ■ . . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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IRF520
IRF520FI
IRF520FI
O-220
ISOWATT220
IRF520/FI
GC2339G
GC20260
GC20270
circuit diagram irf520
GC233
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irf520 mosfet
Abstract: irf520 switch IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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IRF520
O-220
irf520 mosfet
irf520 switch
IRF520
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IRF520 mosfet
Abstract: IRF520
Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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O-220
IRF520
O-220
IRF520 mosfet
IRF520
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PDF
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IRF520
Abstract: transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
Text: IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.27 Ω < 0.27 Ω 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF520
IRF520FI
100oC
175oC
O-220
ISOWATT220
IRF520
transistor IRF520
circuit diagram irf520
IRF520 application note
IRF520FI
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PDF
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Untitled
Abstract: No abstract text available
Text: 7^237 G G M S b 4 b 50b • S G T H SGS-THOMSON [MOœmigTOôfflDûi IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI . . ■ . . . . V d ss RDS on Id 100 V 100 V < 0.27 a < 0.27 Q 10 A 7 A TYPICAL RDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY
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IRF520
IRF520FI
IRF520/FI
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PDF
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IRF520
Abstract: irf521 IRF523 F522
Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF520/521/522/523
IRF520
IRF521
IRF522
IRF523
IRF520/5217522/523
F522
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PDF
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irf521
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF520/521
IRF520
IRF521
002fl7SD
irf521
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PDF
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TP10N10E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF520
b3b725H
TP10N10E
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRF520
O-220AB
TB334
TA09594.
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PDF
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IRF520
Abstract: irf520 mosfet mosfet irf520 irf521 power MOSFET IRF520
Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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IRF520/521/522/523
O-220
IRF520
IRF521
IRF522
IRF523
IRF520/521Z522/523
irf520 mosfet
mosfet irf520
power MOSFET IRF520
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PDF
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IRF520
Abstract: International Rectifier IRF520 IRF52
Text: PD-9.313K International S Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V R DS on = 0 .2 7 Q
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IRF520
0-27Q
O-220
IRF520
International Rectifier IRF520
IRF52
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PDF
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1RF520
Abstract: IRFS20 1rf520 transistor RF521 transistor IRF520 IRF522 mosfet 1000 amper IRFS22 IRF520 IRF521
Text: -F ile N u m b e r Standard Power MOSFETs IRF520, IRF521, IRF522, IRF523 1574 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL ENHA N C EM EN T MODE
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IRF520,
IRF521,
IRF522,
IRF523
0V-100V
IRF522
IRF523
1RF520
IRFS20
1rf520 transistor
RF521
transistor IRF520
mosfet 1000 amper
IRFS22
IRF520
IRF521
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PDF
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irf52 0
Abstract: No abstract text available
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()
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IRF520
IRF52
O220AB
IRF520
irf52 0
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1RF520
Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
Text: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2
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IRF520
T0-220
1RF520
AVW smd
smd ht1
AN-994
IRF520S
SMD-220
ScansUX1012
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PDF
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Power MOSFETs Application Notes irf520
Abstract: IRF520 application note irf520 mosfet IRF520 TB334
Text: IRF520 Data Sheet January 2002 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF520
TA09594.
Power MOSFETs Application Notes irf520
IRF520 application note
irf520 mosfet
IRF520
TB334
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PDF
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International Rectifier IRF520
Abstract: No abstract text available
Text: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRF520
O-220
S54S2
International Rectifier IRF520
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PDF
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Power MOSFETs Application Notes irf520
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Power MOSFETs Application Notes irf520
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IRF521
Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
Text: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)
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773STS
IRF520
IRF521
IRF522
IRF523
O-220
IRF522
IRF523
RP523
R520
R521
irf520 power
G-D-S TO-92
TO-220 3 lead bend
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PDF
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irf520 mosfet
Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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IRF520,
SiHF520
O-220
O-220
18-Jul-08
irf520 mosfet
IRF520
Power MOSFETs Application Notes irf520
SiHF520-E3
1IRF520
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PDF
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transistor IRF520
Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF520
TA09594.
transistor IRF520
irf520 mosfet
37ag
transistor equivalent irf520
IRF520
TB334
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PDF
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irf5205
Abstract: IRF520 IRF521 IRF523 IRF522
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF520
IRF521
IRF522
IRF523
IRF520,
IRF522,
irf5205
IRF523
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PDF
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IRF50
Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Text: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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IRF520
IRF521
IRF522
IRF523
IRF620
IRF523
O-220
IRF50
pin configuration IRF521
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PDF
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM
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71TMHD
IRF520
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PDF
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