IRF530
Abstract: tr irf530
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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O-220
IRF530
O-220
IRF530
tr irf530
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PDF
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irf530
Abstract: IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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Original
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IRF530
O-220
irf530
IRF530 mosfet
datasheet of irf530
IRF530 marking
OF IRF530
tr irf530
irf530 circuit
airbag
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PDF
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IRF530
Abstract: tr irf530
Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
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IRF530
O-220
IRF530
tr irf530
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PDF
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RF1S540
Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power
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Original
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IRF530,
RF1S530SM
IRF53
O220AB
O263AB
RF1S540
RF1S540SM9A
RF1S530SM
OF IRF530
530uH
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PDF
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IRF530 mosfet
Abstract: TA17411 IRF530 TB334 irf530g
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power
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Original
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IRF53
O220AB
O263AB
IRF530
IRF530 mosfet
TA17411
IRF530
TB334
irf530g
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PDF
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IRF530
Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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Original
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IRF530
O-220AB
IRF530
IRF530T
IRF530 fairchild
929e1
980E3
IRF530 mosfet
ON semiconductor N51
IRF530 application
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PDF
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cds photo diode
Abstract: IRF530 marking
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
cds photo diode
IRF530 marking
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PDF
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91019-04
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
91019-04
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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Untitled
Abstract: No abstract text available
Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF530,
SiHF530
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF530
300ns,
530nH,
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PDF
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TT220
Abstract: transistor IRF 531 IRF 530 transistor 531
Text: rZ 7 SGS-THOMSON A T Æ . IRF 530/FI-531/FI IRF 532/FI-533/FI IH D Ê IM ÎIlL U tô M K O D È S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA • • • • TYPE V DSS R DS on IRF530 IRF530FI 100 V 100 V 0.16 0.16 IRF531 IRF531FI
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OCR Scan
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530/FI-531/FI
532/FI-533/FI
IRF530
IRF530FI
IRF531
IRF531FI
IRF532
IRF532FI
IRF533
IRF533FI
TT220
transistor IRF 531
IRF 530
transistor 531
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PDF
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IRF 260 N
Abstract: transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 IRF530FI ISOWATT220 IRF530 530FI IRF532
Text: 1 SGS-THOMSON 3QE D 7^237 0 02 ^77 3 S -TH O M S O N • • • • • "'P '3 > °ì~ \1 [RF 530/FI-531/FI IRF 532/FI-533/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V qss f*DS on IRF530 IRF530FI 100 V 100 V 0.16 ß 0.16 ß Id ' 14 A 9 A
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OCR Scan
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530/FI-531/FI
532/FI-533/FI
IRF530
IRF530FI
IRF531
IRF531FI
IRF532
IRF532FI
IRF533
IRF533FI
IRF 260 N
transistor IRF 531
transistor 531
IRF 530
ISOWATT-220
ISOWATT220
530FI
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PDF
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IRF 260 N
Abstract: transistor IRF 531 IRF 850 transistor 531 IRF 530
Text: ¿ = 7 IRF 530/FI-531/FI IRF 532/FI-533/FI S G S -T H O M S O N ^ 7 # „ HlOiaiSiiBliaïUCTMMIKcül; N • CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DATA TYPE V DSS ^DS on 'd ' IRF530 IRF530FI 100 V 100 V 0.16 n 0.16 n 14 A 9 A IRF531 IRF531FI
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OCR Scan
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530/FI-531/FI
532/FI-533/FI
IRF530
IRF530FI
IRF531
IRF531FI
IRF532
IRF532FI
IRF533
IRF533FI
IRF 260 N
transistor IRF 531
IRF 850
transistor 531
IRF 530
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PDF
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IRF530
Abstract: No abstract text available
Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing
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Original
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HV301/HV311
HV301
HV311
IRF530
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PDF
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Untitled
Abstract: No abstract text available
Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information HV301, PWRGD is Active HIGH HV311, PWRGD is Active LOW 8 Lead SO Package Few External Components 10V to 90V Input Voltage Range
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Original
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HV301/HV311
HV301
HV311
HV301,
HV311,
100ms
HV301LG
HV311LG
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PDF
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IRF530 application
Abstract: hv301 hv311 HV311 HV301 HV301LG HV311LG IRF530 dc to dc converter 48v to 12v 10a diagram
Text: HV301/HV311 HV301/HV311 Hot Swap Controller Negative Supply Rail Ordering Information Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing
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Original
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HV301/HV311
A092605
IRF530 application
hv301 hv311
HV311
HV301
HV301LG
HV311LG
IRF530
dc to dc converter 48v to 12v 10a diagram
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PDF
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IRF530 application
Abstract: pwm 555 timer mosfet driver HV301 HV311 IRF530 circuit diagram of PWM USING IC 555 TIMER transistor irf530
Text: HV301/HV311 HV301 HV311 Demo Kit Available Hotswap, Controllers with Circuit Breaker Negative Supply Rail Features General Description ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ The Supertex HV301 and HV311 Hotswap Controllers provide control of power supply connection during insertion of cards or
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Original
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HV301/HV311
HV301
HV311
HV301
HV311
IRF530 application
pwm 555 timer mosfet driver
IRF530
circuit diagram of PWM USING IC 555 TIMER
transistor irf530
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PDF
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A0926
Abstract: 10v ZENER DIODE
Text: HV301/HV311 HV301/HV311 Hot Swap Controller Negative Supply Rail Ordering Information Features ! ! ! ! ! ! ! ! ! ! ! ! ! ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing
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Original
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HV301/HV311
HV301/HV311
A092605
A0926
10v ZENER DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information HV301, PWRGD is Active HIGH HV311, PWRGD is Active LOW 8 Lead SO Package Few External Components ±10V to ±90V Input Voltage Range
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Original
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HV301/HV311
HV301
HV311
HV301,
HV311,
100ms
Pin192
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PDF
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Untitled
Abstract: No abstract text available
Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail d e d n e m m o ! c s e n R g i t s o e N D w e N r Fo Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information ? 10V to ? 90V Operation Built-in “normally on” turn-on clamp eliminates components
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Original
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HV301/HV311
HV301
HV311
HV301LG
HV311LG
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PDF
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