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    IRF5801 Search Results

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    IRF5801 Price and Stock

    Infineon Technologies AG IRF5801TRPBF

    MOSFET N-CH 200V 600MA MICRO6
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    DigiKey IRF5801TRPBF Digi-Reel 7,766 1
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    IRF5801TRPBF Cut Tape 7,766 1
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    IRF5801TRPBF Reel 6,000 3,000
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    Avnet Americas IRF5801TRPBF Reel 10 Weeks 3,000
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    Mouser Electronics IRF5801TRPBF 30,350
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    Verical IRF5801TRPBF 23,530 71
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    IRF5801TRPBF 9,000 2,348
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    IRF5801TRPBF 6,000 2,348
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    IRF5801TRPBF 3,000 3,000
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    IRF5801TRPBF 487 51
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    Arrow Electronics IRF5801TRPBF 3,000 10 Weeks 3,000
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    IRF5801TRPBF Cut Strips 487 10 Weeks 1
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    Newark IRF5801TRPBF Cut Tape 6,289 5
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    IRF5801TRPBF Reel 3,000
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    RS IRF5801TRPBF Bulk 10
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    Bristol Electronics IRF5801TRPBF 151,755
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    Rochester Electronics IRF5801TRPBF 15,000 1
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    TME IRF5801TRPBF 3,054 1
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    Chip1Stop IRF5801TRPBF Cut Tape 23,530
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    EBV Elektronik IRF5801TRPBF 11 Weeks 3,000
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    International Rectifier IRF5801TR

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    Quest Components IRF5801TR 2,094
    • 1 $1.4805
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    • 1000 $0.5922
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    International Rectifier IRF5801TRPBF

    HEXFET SMPS POWER MOSFET Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IRF5801TRPBF 1,980
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    IRF5801 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF5801 International Rectifier HEXFET POWER SMPS MOSFET Original PDF
    IRF5801TR International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    IRF5801TRPBF International Rectifier Original PDF

    IRF5801 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-94044A IRF5801 AN1001) IRF5801TRPBF 18-Sep-2009 PDF

    IRF MOSFET 100A 200v

    Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
    Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


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    IRF5801PbF 10sec. IRF MOSFET 100A 200v IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806 PDF

    TSOP-6 .54

    Abstract: AN1001 IRF5801
    Text: PD-94044 IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-94044 IRF5801 AN1001) 10sec. TSOP-6 .54 AN1001 IRF5801 PDF

    AN1001

    Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
    Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-95474A IRF5801PbF AN1001) 10sec. AN1001 IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-95474B IRF5801PbF AN1001) 10sec. PDF

    IRFTS9342TRPBF

    Abstract: No abstract text available
    Text: IRF5801PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 V 2.20 Ω 3.9 0.6 D 1 6 D nC D 2 5 D A G 3 4 S TSOP-6 Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free


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    IRF5801PbF-1 IRF5801TRPbF-1 TD-020D IRFTS9342TRPBF PDF

    IRF580

    Abstract: No abstract text available
    Text: PD- 94044 PROVISIONAL IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


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    IRF5801 AN1001) IRF580 PDF

    AN1001

    Abstract: IRF5801 TSOP 48 thermal resistance junction to case
    Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-94044A IRF5801 AN1001) 10sec. AN1001 IRF5801 TSOP 48 thermal resistance junction to case PDF

    AN1001

    Abstract: No abstract text available
    Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-95474B IRF5801PbF AN1001) 10sec. AN1001 PDF

    IRF 511 MOSfet

    Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
    Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


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    IRF5805PbF OT-23. IRF 511 MOSfet IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6 PDF

    mosfet p-channel 300v irf

    Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
    Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier


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    PD-95240 Si3443DVPbF OT-23. mosfet p-channel 300v irf P-Channel 200V MOSFET TSOP6 IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V PDF

    IRf 334

    Abstract: No abstract text available
    Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


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    IRF5804PbF OT-23. IRf 334 PDF

    irf MOSFET p-CH

    Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
    Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description


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    PD-95341 IRF5851PbF irf MOSFET p-CH IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    IRF Power MOSFET code marking

    Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
    Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


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    5476A IRF5806PbF OT-23. IRF Power MOSFET code marking IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852 PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET


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    6411A IRFTS9342PbF IRFTS9342TRPbF D-020D PDF

    0.5-4A

    Abstract: AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
    Text: PD- 95475A IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    5475A IRF5802PbF AN1001) 0.5-4A AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV PDF

    IRFTS9342TRPBF

    Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
    Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET


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    6411A IRFTS9342PbF IRFTS9342TRPbF D-020D IRFTS9342TRPBF 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803 PDF

    IRLTS6342TRPBF

    Abstract: IRLTS6342 m4570 irlts6342tr irf5850
    Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits


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    IRLTS6342PbF IRLTS6342TRPBF D-020D IRLTS6342TRPBF IRLTS6342 m4570 irlts6342tr irf5850 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


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    PD-95262 IRF5803PbF OT-23. PDF

    IRF5800

    Abstract: IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
    Text: IRF5852PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


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    IRF5852PbF IRF5803 IRF5802 IRF5800 IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV PDF

    Light Dimmer 800 watt with Schematic

    Abstract: zero crossing dimmer zigbee Voltech dimmer 2250u busch dimmer 2250u 3 volt dimmer circuit light dimmer working circuit using triac TMK316B7106KL-TD 220 volt dimmer circuit 1210 LED
    Text: User's Guide SLUU523 – July 2011 Using the TPS92070EVM-648 Integrated Dimming LED Lighting Driver Converter for 230 VAC Input The TPS92070EVM-648 evaluation module EVM is a low power isolated flyback converter that provides 5 on-board LEDs with 370 mA of drive current from a nominal 230 VAC input. This EVM is designed to


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    SLUU523 TPS92070EVM-648 TPS92070 Light Dimmer 800 watt with Schematic zero crossing dimmer zigbee Voltech dimmer 2250u busch dimmer 2250u 3 volt dimmer circuit light dimmer working circuit using triac TMK316B7106KL-TD 220 volt dimmer circuit 1210 LED PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS92410EVM-002 Offline LED Driver Evaluation Module User's Guide Literature Number: SLVUA46 May 2014 Contents 1 2 3 Introduction . 4 Warnings and Cautions . 4


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    TPS92410EVM-002 SLVUA46 PDF