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    IRF614 Price and Stock

    Vishay Siliconix IRF614SPBF

    MOSFET N-CH 250V 2.7A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF614SPBF Tube 800 1
    • 1 $2.46
    • 10 $1.583
    • 100 $2.46
    • 1000 $0.8673
    • 10000 $0.8673
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    Bristol Electronics IRF614SPBF 650
    • 1 -
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    Quest Components IRF614SPBF 520
    • 1 $2.236
    • 10 $2.236
    • 100 $2.236
    • 1000 $1.0342
    • 10000 $1.0342
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    Vishay Siliconix IRF614

    MOSFET N-CH 250V 2.7A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF614 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $1.4136
    • 10000 $1.4136
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    Rochester Electronics LLC IRF614

    ADVANCED POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF614 Bulk 695
    • 1 -
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    • 1000 $0.44
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    Vishay Siliconix IRF614L

    MOSFET N-CH 250V 2.7A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF614L Tube
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    Vishay Siliconix IRF614S

    MOSFET N-CH 250V 2.7A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF614S Tube 1,000
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    • 1000 $1.68
    • 10000 $1.68
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    Find more IRF614 price and stock on Findchips.com

    IRF614 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF614 Intersil 2.0A, 250V, 2.0 ?, N-Channel Power MOSFET Original PDF
    IRF614 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF614 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.7A TO-220AB Original PDF
    IRF614 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF614 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 2.7A, Pkg Style TO-220AB Scan PDF
    IRF614 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF614 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF614 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF614 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF614 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF614 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF614 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF614 Unknown FET Data Book Scan PDF
    IRF614A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF614A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF614B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    IRF614B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRF614B_FP001 Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRF614 & IRF614A Original PDF
    IRF614L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.7A TO-262 Original PDF
    IRF614L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRF614 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF614

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration


    Original     		PDF IRF614, SiHF614 O-220 O-220 18-Jul-08 IRF614

    IRF614

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF614 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRF614 O-220 IRF614

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 11-Mar-11

    IRFS614B

    Abstract: IRF614B
    Text: IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF614B/IRFS614B O-220 IRFS614B IRF614B

    MOSFET 200v 20A n.channel

    Abstract: IRF614 TB334
    Text: IRF614 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF614 TA17443 MOSFET 200v 20A n.channel IRF614 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF614S, SiHF614S SMD-220 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements


    Original     		PDF IRF614, SiHF614 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF614 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V) I(D) Max. (A)2.7 I(DM) Max. (A) Pulsed I(D)1.7 @Temp (øC)100õ IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)36 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF614

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF614A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRF614A O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements


    Original     		PDF IRF614, SiHF614 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) O-26electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF614S, SiHF614S SMD-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration


    Original     		PDF IRF614, SiHF614 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF614S A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 . 0 Q. ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614S

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF GG17273 IRF614/615 IRF614 IRF615 IBF615

    IRF614A

    Abstract: No abstract text available
    Text: IRF614A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q 00 evi ^DS on = II ♦ Rugged Gate Oxide Technology 2 .0 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614A IRF614A

    Untitled

    Abstract: No abstract text available
    Text: IRF614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 250V


    OCR Scan     		PDF IRF614A Ran06

    CI LA 4303

    Abstract: LA 4301 irf614
    Text: 2î H A R R IRF614 I S SEMICONDUCTOR N-Channel Power MOSFETs Avalanche Energy Rated M ay 1992 Package Features • 2.0A, 250V T0-220AB TOP VIEW • rDS ON = • Single Pulse Avalanche Energy Rated DRAIN (FLANGE) • SOA Is Power-Dlsslpation Limited u • Nanosecond Switching Speeds


    OCR Scan     		PDF IRF614 T0-220AB 200Vv IRF614 CI LA 4303 LA 4301

    Untitled

    Abstract: No abstract text available
    Text: IRF614A Advanced Power MOSFET FEATURES B^DSS - ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology 00 evi Q II ♦ Lower Input Capacitance 250 V 2.0Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF614 FEATURES • Low er R d s j o n • Improved inductive ruggedness • Fast switching tim es • Rugged polysilicon gate cell structure • Low er input ca p acita nce • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		PDF IRF614 7TL4142

    smd 42t

    Abstract: No abstract text available
    Text: PD-9.1003 International k R ectifier IRF614S HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 250V


    OCR Scan     		PDF IRF614S SMD-220 465S4S2 DD21451 smd 42t

    Untitled

    Abstract: No abstract text available
    Text: IRF614 HARRIS S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Description Features 2.0A, 250V Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET


    OCR Scan     		PDF IRF614

    IRF614S

    Abstract: No abstract text available
    Text: IRF614S A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^D S o n = ♦ Lower Input Capacitance _Q ♦ Improved Gate Charge CO c\i II ♦ Rugged Gate Oxide Technology 250 V 2.0 a A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614S IRF614S