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    IRF73 Price and Stock

    Infineon Technologies AG IRF7316TRPBF

    MOSFET 2P-CH 30V 4.9A 8SO
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    DigiKey IRF7316TRPBF Reel 36,000 4,000
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    Newark IRF7316TRPBF Cut Tape 14,595 5
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    RS IRF7316TRPBF Bulk 20
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    Rochester Electronics IRF7316TRPBF 1
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    TME IRF7316TRPBF 7,635 1
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    Chip1Stop IRF7316TRPBF Cut Tape 3,995
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    EBV Elektronik IRF7316TRPBF 19 Weeks 4,000
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    Infineon Technologies AG IRF7319TRPBF

    MOSFET N/P-CH 30V 8SO
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    DigiKey IRF7319TRPBF Cut Tape 17,882 1
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    IRF7319TRPBF Digi-Reel 17,882 1
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    IRF7319TRPBF Reel 16,000 4,000
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    Avnet Americas IRF7319TRPBF Reel 4,000 18 Weeks 4,000
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    IRF7319TRPBF Ammo Pack 17 Weeks, 5 Days 1
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    IRF7319TRPBF Reel 10 Weeks 4,000
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    Mouser Electronics IRF7319TRPBF 11,252
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    RS IRF7319TRPBF Bulk 20
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    Rochester Electronics IRF7319TRPBF 14,160 1
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    Ameya Holding Limited IRF7319TRPBF 4,000
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    Chip1Stop IRF7319TRPBF Cut Tape 35,417
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    EBV Elektronik IRF7319TRPBF 19 Weeks 4,000
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    Win Source Electronics IRF7319TRPBF 167,000
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    Infineon Technologies AG IRF7303TRPBFXTMA1

    MOSFET 2N-CH 30V 4.9A 8DSO-902
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    DigiKey IRF7303TRPBFXTMA1 Cut Tape 10,710 1
    • 1 $1.4
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    IRF7303TRPBFXTMA1 Digi-Reel 10,710 1
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    • 1000 $0.41764
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    IRF7303TRPBFXTMA1 Reel 8,000 4,000
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    Avnet Americas IRF7303TRPBFXTMA1 Reel 10 Weeks 4,000
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    Newark IRF7303TRPBFXTMA1 Cut Tape 3,703 1
    • 1 $0.935
    • 10 $0.771
    • 100 $0.608
    • 1000 $0.432
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    Infineon Technologies AG IRF7324TRPBF

    MOSFET 2P-CH 20V 9A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7324TRPBF Digi-Reel 10,288 1
    • 1 $2.07
    • 10 $1.325
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    • 10000 $0.60482
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    IRF7324TRPBF Cut Tape 10,288 1
    • 1 $2.07
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    IRF7324TRPBF Reel 8,000 4,000
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    Avnet Americas IRF7324TRPBF Reel 4,000 12 Weeks 4,000
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    IRF7324TRPBF Ammo Pack 19 Weeks, 1 Days 1
    • 1 $1.44
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    Mouser Electronics IRF7324TRPBF 7,137
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    Rochester Electronics IRF7324TRPBF 4,912 1
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    Chip1Stop IRF7324TRPBF Cut Tape 11,880
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    EBV Elektronik IRF7324TRPBF 4,000 13 Weeks 4,000
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    New Advantage Corporation IRF7324TRPBF 4,000 1
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    Win Source Electronics IRF7324TRPBF 169,292
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    UMW IRF7301TR

    MOSFET 2N-CH 20V 5.2A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7301TR Cut Tape 2,980 1
    • 1 $0.62
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    IRF7301TR Digi-Reel 2,980 1
    • 1 $0.62
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    IRF73 Datasheets (450)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF730 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF730 Intersil 5.5A, 400V, 1.000 ?, N-Channel Power MOSFET Original PDF
    IRF730 Philips Semiconductors PowerMOS transistor Avalanche energy rated Original PDF
    IRF730 STMicroelectronics N-CHANNEL 400V - 0.75 ? - 5.5A - TO-220 POWERME Original PDF
    IRF730 STMicroelectronics N-channel power MOSFET, 5.5 A, 400V. Original PDF
    IRF730 STMicroelectronics N - CHANNEL 400V - 0.75 W - 5.5A - TO-220 PowerMESH MOSFET Original PDF
    IRF730 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220 Original PDF
    IRF730 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF730 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220AB Original PDF
    IRF730 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350 V/400V Scan PDF
    IRF730 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF730 FCI POWER MOSFETs Scan PDF
    IRF730 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF730 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF730 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. Scan PDF
    IRF730 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF730 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF730 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF730 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF730 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, 5.5A, Pkg Style TO-220AB Scan PDF
    ...

    IRF73 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    IRF730B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    f 1010

    Abstract: 7105 irf1010
    Text: PD - 95947 IRF737LCPbF • Lead-Free www.irf.com 12/20/04 IRF737LCPbF 2 www.irf.com IRF737LCPbF www.irf.com 3 IRF737LCPbF 4 www.irf.com IRF737LCPbF www.irf.com 5 IRF737LCPbF 6 www.irf.com IRF737LCPbF www.irf.com 7 IRF737LCPbF TO-220AB Package Outline TO-220AB Part Marking Information


    Original
    IRF737LCPbF O-220AB f 1010 7105 irf1010 PDF

    ic 94101

    Abstract: innovative dro IRF7342D2
    Text: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V


    Original
    IRF7342D2 ic 94101 innovative dro IRF7342D2 PDF

    F7101

    Abstract: IRF7101 IRF7311 MS-012AA
    Text: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier


    Original
    91435C IRF7311 F7101 IRF7101 IRF7311 MS-012AA PDF

    IRF7306

    Abstract: No abstract text available
    Text: PD - 9.1241C IRF7306 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 Description 1 8 2 7 3 6 4 5 D1 VDSS = -30V


    Original
    1241C IRF7306 IRF7306 PDF

    IRF7389

    Abstract: irf7389 application
    Text: PD - 91645 IRF7389 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 30V -30V


    Original
    IRF7389 IRF7389 irf7389 application PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original
    IRF737LC 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    IRF730A, SiHF730A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    P65 MOSFET

    Abstract: IRF7353D2
    Text: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint


    Original
    IRF7353D2 7353d2 P65 MOSFET IRF7353D2 PDF

    IRF7317

    Abstract: MS-012AA
    Text: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V


    Original
    1568B IRF7317 EIA-48 IA-541. IRF7317 MS-012AA PDF

    IRF7101

    Abstract: IRF7324D1
    Text: PD- 91789 IRF7324D1 PRELIMINARY FETKY MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V RDS on = 0.18Ω


    Original
    IRF7324D1 IRF7101 IRF7324D1 PDF

    IRF730B

    Abstract: No abstract text available
    Text: IRF730B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    IRF730B O-22ner IRF730B PDF

    IRF730FI

    Abstract: IRF730 OC470 irf730f
    Text: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original
    IRF730 IRF730FI 100oC O-220 ISOWATT220 IRF730FI IRF730 OC470 irf730f PDF

    91802A

    Abstract: IRF7353D1
    Text: PD- 91802A IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description


    Original
    1802A IRF7353D1 91802A IRF7353D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free


    Original
    IRF7309PbF-1 IRF7309TRPr D-020D PDF

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan
    DD3711b T-39-01 CMD8 PDF

    ld33a

    Abstract: LD33A SMD MARKING AN-994 IRF730S SMD-220 ld33
    Text: PD-9.1009 International m u Rectifier IRF730S HEXFET P o w er M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V


    OCR Scan
    IRF730S SMD-220 ld33a LD33A SMD MARKING AN-994 IRF730S ld33 PDF

    IRF730

    Abstract: 733 331 IRFP330 731 MOSFET IRF731 IRFP331 331Z Z012I IRF732 dd173d
    Text: SA M S UN G E L E C T R O N I C S INC b7E D • V T b M l M S D G I T S T T 523 ■ SUCK N-CHANNEL POWER MOSFETS IRF730/731Z732/733 IRFP330/331/332/333 FEATURES • • • • • • • TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times


    OCR Scan
    IRF730/731Z732/733 IRFP330/331/332/333 IRF730/IRFP330 IRF731 /IRFP331 IRF732/IRFP332 IRF733/IRFP333 T0-220 IRF730/7 IRF730 733 331 IRFP330 731 MOSFET IRFP331 331Z Z012I IRF732 dd173d PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan
    IRF730A PDF

    SEC IRF730

    Abstract: No abstract text available
    Text: IRF730 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan
    IRF730 SEC IRF730 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt­ age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and


    OCR Scan
    IRF730 O-220) GlD273b PDF