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    IRF734 Price and Stock

    Infineon Technologies AG IRF7343TRPBF

    MOSFET N/P-CH 55V 4.7A/3.4A 8SO
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    DigiKey IRF7343TRPBF Reel 36,000 4,000
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    Avnet Americas IRF7343TRPBF Reel 36,000 18 Weeks 4,000
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    IRF7343TRPBF Bulk 16 Weeks, 3 Days 1
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    IRF7343TRPBF Reel 10 Weeks 4,000
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    Mouser Electronics IRF7343TRPBF 13,619
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    IRF7343TRPBF 8,498 51
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    Arrow Electronics IRF7343TRPBF 24,000 18 Weeks 4,000
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    Newark IRF7343TRPBF Bulk 16,551 1
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    TME IRF7343TRPBF 3,726 1
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    Win Source Electronics IRF7343TRPBF 25,500
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    Infineon Technologies AG IRF7341TRPBFXTMA1

    MOSFET 2N-CH 55V 4.7A 8DSO-902
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    DigiKey IRF7341TRPBFXTMA1 Reel 16,000 4,000
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    Avnet Americas IRF7341TRPBFXTMA1 Ammo Pack 16 Weeks, 3 Days 1
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    IRF7341TRPBFXTMA1 Reel 8 Weeks 4,000
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    Mouser Electronics IRF7341TRPBFXTMA1 4,799
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    Arrow Electronics IRF7341TRPBFXTMA1 Cut Strips 3,154 8 Weeks 1
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    EBV Elektronik IRF7341TRPBFXTMA1 324,000 9 Weeks 4,000
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    New Advantage Corporation IRF7341TRPBFXTMA1 260,000 1
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    Infineon Technologies AG IRF7341GTRPBF

    MOSFET 2N-CH 55V 5.1A 8SO
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    DigiKey IRF7341GTRPBF Digi-Reel 5,716 1
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    IRF7341GTRPBF Cut Tape 5,716 1
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    IRF7341GTRPBF Ammo Pack 18 Weeks, 3 Days 1
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    Mouser Electronics IRF7341GTRPBF 36,452
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    EBV Elektronik IRF7341GTRPBF 11 Weeks 4,000
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    Win Source Electronics IRF7341GTRPBF 48,000
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    Infineon Technologies AG IRF7341TRPBF

    MOSFET 2N-CH 55V 4.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7341TRPBF Reel 4,000 4,000
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    Verical IRF7341TRPBF 20,000 4,000
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    IRF7341TRPBF 3,802 26
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    Quest Components IRF7341TRPBF 1,349
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    Rochester Electronics IRF7341TRPBF 1
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    UMW IRF7341TR

    MOSFET 2N-CH 55V 4.7A 8SOP
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    DigiKey IRF7341TR Reel 3,000 3,000
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    IRF734 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF734 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF734 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 450V 4.9A TO-220AB Original PDF
    IRF734 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF734 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF734 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF7341 International Rectifier Dual N-CHANNEL HEXFET Power MOSFET Original PDF
    IRF7341 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF
    IRF7341GTRPBF Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N-CH 55V 5.1A Original PDF
    IRF7341IPBF International Rectifier Original PDF
    IRF7341(N) International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7341PBF International Rectifier Original PDF
    IRF7341Q International Rectifier 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7341Q International Rectifier HEXFET Power MOSFET Original PDF
    IRF7341QPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRF7341QTR International Rectifier 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7341QTRPBF International Rectifier 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7341Q with Lead-Free Packaging shipped on Tape and reel. Original PDF
    IRF7341TR International Rectifier 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7341TRPBF International Rectifier Original PDF
    IRF7341UPBF International Rectifier Original PDF
    IRF7342 International Rectifier Dual P-CHANNEL HEXFET Power MOSFET Original PDF

    IRF734 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ic 94101

    Abstract: innovative dro IRF7342D2
    Text: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V


    Original
    IRF7342D2 ic 94101 innovative dro IRF7342D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95973 IRF734PbF • Lead-Free Document Number: 91049 12/20/04 www.vishay.com 1 IRF734PbF Document Number: 91049 www.vishay.com 2 IRF734PbF Document Number: 91049 www.vishay.com 3 IRF734PbF Document Number: 91049 www.vishay.com 4 IRF734PbF Document Number: 91049


    Original
    PD-95973 IRF734PbF O-220AB PDF

    IRF7342

    Abstract: No abstract text available
    Text: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V


    Original
    IRF7342 IRF7342 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96109A IRF7342QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V


    Original
    6109A IRF7342QPbF EIA-481 EIA-541. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96088 IRF7343IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description


    Original
    IRF7343IPbF EIA-481 EIA-541. PDF

    F8707G

    Abstract: f8707 IRF8707G
    Text: IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free VDSS 55V Description These HEXFET Power MOSFET’s in a Dual SO-8 package


    Original
    IRF7341GPbF D-020D F8707G f8707 IRF8707G PDF

    IRF7342D2

    Abstract: No abstract text available
    Text: PD- 94101A IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D D VDSS = -55V


    Original
    4101A IRF7342D2 EIA-481 EIA-541. IRF7342D2 PDF

    10-150TC

    Abstract: No abstract text available
    Text: PD- 95299 IRF7342D2PbF TM Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l SO-8 Footprint l Lead-Free Description FETKY MOSFET & Schottky Diode l 1 8 K A 2 7 K S


    Original
    IRF7342D2PbF EIA-481 EIA-541. 10-150TC PDF

    IRF7342PbF

    Abstract: No abstract text available
    Text: PD - 95200 IRF7342PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2


    Original
    IRF7342PbF EIA-481 EIA-541. IRF7342PbF PDF

    IRF P CHANNEL MOSFET

    Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
    Text: PD - 96110 IRF7343QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET


    Original
    IRF7343QPBF EIA-481 EIA-541. IRF P CHANNEL MOSFET MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet PDF

    51A SO8

    Abstract: No abstract text available
    Text: IRF7341QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original
    IRF7341QPbF EIA-481 EIA-541. 51A SO8 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7342QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original
    IRF7342QPbF EIA-481 EIA-541. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96108A IRF7341QPbF HEXFET Power MOSFET Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿ Lead-Free VDSS RDS on max


    Original
    6108A IRF7341QPbF EIA-481 EIA-541. PDF

    irf734p

    Abstract: IRF734 SiHF734-E3
    Text: IRF734, SiHF734 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 45 Qgs (nC) 6.6 Qgd (nC) 24 Configuration • Repetitive Avalanche Rated 1.2 • Simple Drive Requirements • Lead (Pb)-free


    Original
    IRF734, SiHF734 O-220 18-Jul-08 irf734p IRF734 SiHF734-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7342QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = -55V RDS on = 0.105Ω


    Original
    IRF7342QPbF D-020D PDF

    IRF734

    Abstract: No abstract text available
    Text: IRF734, SiHF734 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 45 Qgs (nC) 6.6 Qgd (nC) 24 Configuration • Repetitive Avalanche Rated 1.2 • Simple Drive Requirements • Lead (Pb)-free


    Original
    IRF734, SiHF734 O-220 12-Mar-07 IRF734 PDF

    IRF7343QPBF

    Abstract: No abstract text available
    Text: PD - 96110A IRF7343QPBF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2


    Original
    6110A IRF7343QPBF aval61 EIA-481 EIA-541. IRF7343QPBF PDF

    95087

    Abstract: No abstract text available
    Text: PD-95087 IRF7341IPbF l l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V


    Original
    PD-95087 IRF7341IPbF EIA-481 EIA-541. 95087 PDF

    IRF7343IPBF

    Abstract: NCH 60V 20A mosfet p-channel 12v
    Text: PD - 96088 IRF7343IPbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description Fifth Generation HEXFETs from International Rectifier


    Original
    IRF7343IPbF EIA-481 EIA-541. IRF7343IPBF NCH 60V 20A mosfet p-channel 12v PDF

    IRF7341Q

    Abstract: 7-D-13 4.5V TO 100V INPUT REGULATOR
    Text: PD - 94391B IRF7341Q HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • • • • • • VDSS RDS(on) max ID 55V 0.050@VGS = 10V 0.065@VGS = 4.5V 5.1A 4.42A Advanced Process Technology


    Original
    94391B IRF7341Q EIA-481 EIA-541. IRF7341Q 7-D-13 4.5V TO 100V INPUT REGULATOR PDF

    IRF7343

    Abstract: IR*343
    Text: PD - 9.1709 IRF7343 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 2 7 3 6 4 5 P -C H A N N E L M O S FE T


    Original
    IRF7343 IRF7343 IR*343 PDF

    IRF7343

    Abstract: IR*343
    Text: PD -91709 IRF7343 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P -C H A N N E L M O S F E T


    Original
    IRF7343 IRF7343 IR*343 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96110A IRF7343QPBF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2


    Original
    6110A IRF7343QPBF EIA-481 EIA-541. PDF

    IRF1010

    Abstract: IRF734 SS452
    Text: PD-9.999 International H ü Rectifier IRF734 HEXFET Pow er M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration H E X F E T s from International R ectifier provide the de sig ner


    OCR Scan
    IRF734 O-220 Dra720403 D-6380 IRF1010 IRF734 SS452 PDF