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    IRF9520 P CHANNEL Search Results

    IRF9520 P CHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TLP293-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP292-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    IRF9520 P CHANNEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF9520

    Abstract: VG 9523 g a 9523 g IRF9523 9523 IRF9521 9521
    Text: IRF9520/9521 /9522/9523 C Z ”S ilico n ix <A Jf in c o rp o ra te d P-Channel Enhancement Mode Transistors TQ-220AB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS IRF9520 r DS(ON) •d (il) (A) -100 0.60 -6.0 IRF9521 -60 0.60 -6.0 IRF9522 -100 0.80 -5.0


    OCR Scan     		IRF9520/9521 TQ-220AB IRF9520 IRF9521 IRF9522 IRF9523 VG 9523 g a 9523 g IRF9523 9523 9521 PDF

    irf9520

    Abstract: IRF9522 9521z irf9521
    Text: P-CHANNEL POWER MOSFETS IRF9520/9521Z9522/9523 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		IRF9520/9521Z9522/9523 IRF9520 IRF9512 IRF9523 C520/9521 IRF9520/9521/9522/9523 IRF9522 9521z irf9521 PDF

    1RF9520

    Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
    Text: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -


    OCR Scan     		IRF9520 -100V O-220 T0-220 1RF9520S 1RF9520 diode S68a 68A diode IRF9520S UI5 321 ScansUX102 d68a SMD MARKING "68A" PDF

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


    OCR Scan     		O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE PDF

    irf9520

    Abstract: IRF9520 equivalent
    Text: IRF9520 Data Sheet January 2002 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET Features • 6A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		IRF9520 TA17501. irf9520 IRF9520 equivalent PDF

    f9520

    Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
    Text: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability


    OCR Scan     		IRF9520/9521/9522/9523 IRF9520 IRF9521 F9522 IRF9523 IRF9520/9521 f9520 GS 9521 IRF9520 Samsung 9521 ltsj PDF

    IRF9520

    Abstract: PJ 63 MM diode DIODE marking CJSS kic 125 MJ 68A diode pj 84
    Text: PD-9.319G International S Rectifier IRF9520 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = - 1 0 0 V


    OCR Scan     		IRF9520 O-220 T0-220 -100V 60Qs- IRF9520 PJ 63 MM diode DIODE marking CJSS kic 125 MJ 68A diode pj 84 PDF

    IRF9520

    Abstract: No abstract text available
    Text: IRF9520 Data Sheet Title F95 bt ,0V, 00 m, an- 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		IRF9520 TA17501. IRF9520 PDF

    irf9520 p channel

    Abstract: IRF9520
    Text: IRF9520 Data Sheet July 1999 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET • 6A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance


    Original     		IRF9520 TA17501. O-220AB irf9520 p channel IRF9520 PDF

    Untitled

    Abstract: No abstract text available
    Text: International ic?r Rectifier m 1,4551,52 om^d HEXFET Power M O S F E T • • • • • • • •»* PD'9-319G IRF9520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling


    OCR Scan     		IRF9520 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9520 S e m iconductor April 1999 Data Sheet -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are PChannel enhancement mode silicon gate power field effect


    OCR Scan     		IRF9520 -100V, O-220AB -100V PDF

    IRF9120

    Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
    Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET


    OCR Scan     		IRF9120/912110122/9123 IRFP9120/9121 IRF9520/9521 D0054DE IRF/IRFP9120, IRF9520 IRF/IRFP9121, IRF9521 IRF/IRFP9122, IRF9522 IRF9120 IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRFP9121 PDF

    IRF9521

    Abstract: f9520 IRF9520 Samsung
    Text: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure


    OCR Scan     		DP12S4Ã IRF9520/9521/9522/9523 F9520 F9512 F9523 IRF9520 IRF9521 IRF9522 IRF9523 IRF9521 f9520 IRF9520 Samsung PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9520/9521 FEATURES • L o w e r R ds o n • Im proved inductive ruggedness • Fast sw itching tim es • R u gge d polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Im proved high temperature reliability


    OCR Scan     		IRF9520/9521 IRF9520 -100V IRF9521 7Tb4142 PDF

    f9520

    Abstract: irf9520 IRF9520 harris
    Text: h a r r i s IRF9520, IRF9521 IRF9522, IRF9523 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Package F e a tu re s T 0 -2 2 0 A B • -5 A and -6 A , -8 0 V and - 1 00V TOP VIEW • rD S O N = 0 .6 f l and 0 .8 H • Single Pulse Avalanche Energy Rated


    OCR Scan     		IRF9520, IRF9521 IRF9522, IRF9523 F9522, F9523 f9520 irf9520 IRF9520 harris PDF

    Untitled

    Abstract: No abstract text available
    Text: 430B271 0054552 47D • h a f r r i s HAS IR F9520, IRF9521 IR F 9 5 22 , IR F 9 5 23 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features TO -220A B • -5 A and -6 A , -8 0 V and -1 0 0 V TOP VIEW • rD S O N = 0 . 6 f l a n d 0 . 8 i l


    OCR Scan     		430B271 F9520, IRF9521 -220A IRF9520, IRF9521, IRF9522 IRF9523 IRF9522, IRF9523 PDF

    irf9630

    Abstract: T0-22Q IRF9Z34 IRF9Z14
    Text: International HEXFET Power MOSFETs T0-22QAB liQ R R ectifier Logic-level H E X F E T s are fully-enhanced with 4 or 5V applied to the gate. T0-220AB Logic Level N-Channel Part Number V BR DSS Drain-to-Source Boston) Iq Continuous Breakdown On-State Drain Current


    OCR Scan     		T0-22QAB T0-220AB IRL2203 IRL3705 IRLZ14 IRLZ24 IRLZ34 IRLZ44 IRL510 IRL520 irf9630 T0-22Q IRF9Z34 IRF9Z14 PDF

    IRFP040

    Abstract: IRFP141 IRFP142 IRFP143 IRF9613 irfp245 IRF9620 IRF9632 IRF9643
    Text: HEXFET Power MOSFETs International S Rectifier Plastic Insertable Package TO-220 P-Channel s Drain Source Voltage Volts Vq Part Number RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max


    OCR Scan     		O-220 IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9613 IRFP040 IRFP141 IRFP142 IRFP143 irfp245 IRF9620 IRF9632 IRF9643 PDF

    IRF9240

    Abstract: IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132
    Text: TH On SON / D I S T R I B U T O R SflE D TCSK Power MOSFETs Rugged-Series Power MOSFETs — P-Channel P aci ag e — • M axim u r n R a tin g s bvdss (V 60 100 150 20 0 <d s (A) r DS(O N) O HM S e AS (m i) 0.6 0.8 2.5 3 3.5 4 5 5.5 6 6.5 10 12 19 15 25


    OCR Scan     		O-204 O-205 T0-220 O-247 irfd9113 irfd9123 irf9513 irf9511 irff9123 irff9121 IRF9240 IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132 PDF

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet PDF

    IRF9521

    Abstract: IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32
    Text: PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D INTERNATIONAL. RECTIFIER MässMsa oüiassb s • IOR T - 3 ^ - 0 3 TO-220 Package N-CHANNEL Types VDS r D S 0N (max) Iq cont <0M PO T c - 2 5 °C pulsed max A W IRF840 0.85 8.0 3 2.0 125 IR F8 4 2 IRF83 0


    OCR Scan     		O-220 IRF840 IRF842 IRF830 IRF832 IRF820 IRF822 IRFBC40 IRFBC42 IRFBC30 IRF9521 IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32 PDF

    IRFBE40

    Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
    Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800


    OCR Scan     		IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 IRFK3D150 IRFK3D250 IRFK3D350 IRFBE40 IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034 PDF

    IRFC9130

    Abstract: IRFC9140
    Text: INTERN ATI ONAL RECTIFIER SbE D • 4flS54S2 QG1G101 fl ■ HEXFET Die N-Channel International l&R| Rectifier > Electrical Probe Specifications for P-Channel H E X F E T f & III Power M O S FE T Die Recommended Bond Wire S i n Hex Size 1 2 3 4 Part Number


    OCR Scan     		4flS54S2 QG1G101 IRFC9014 IRFC9110 IRFC9210 IRFC9024 IRFC9120 IRFG9220 IRFC9034 IRFC9130 IRFC9140 PDF

    FL110

    Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
    Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case


    OCR Scan     		OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc PDF