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    IRF9530* P-CHANNEL POWER MOSFET Search Results

    IRF9530* P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    IRF9530* P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF9530 mosfet

    Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		IRF9530, RF1S9530SM IRF95 530SM IRF9530 mosfet IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 PDF

    IRF9530 mosfet

    Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		IRF9530, RF1S9530SM TA17511. IRF9530 mosfet IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		IRF9530, RF1S9530SM -100V, PDF

    IRF9530

    Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		IRF9530, RF1S9530SM TA17511. IRF9530 dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 PDF

    f9530

    Abstract: No abstract text available
    Text: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, -100V f9530 PDF

    IRF9530

    Abstract: IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power
    Text: P-CHANNEL POWER MOSFETS IRF9530/9531/9532/9533 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		IRF9530/9531/9532/9533 IRF9530 IRF9531 IRF9532 F9533 IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power PDF

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


    OCR Scan     		O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF9530/9531 O-220 IRF9530 -100V IRF9531 PDF

    f9530

    Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
    Text: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area


    OCR Scan     		IRF9530/9531 /9532Z9533 IRFP9130/9131 O-220 F9530/9531 F9531 /IRFP91 IRFP9130/91 IRF9530/9531/9532/9533 IRFP9130/9131/9132/9133 f9530 IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133 PDF

    IRF9530

    Abstract: IRF9531 IRF9530 mosfet
    Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    Original     		IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9530 IRF9531 IRF9530 mosfet PDF

    irf9530

    Abstract: irf9532 JEDEC TO-263A IRF9531
    Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9532 irf9530 JEDEC TO-263A IRF9531 PDF

    IRF9530

    Abstract: IRF9530 mosfet IRF953Q 25Q 328 320G k17c IRF9530 international
    Text: PD-9.320G International S Rectifier IRF9530 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -100V ^DS on = 0.30Q


    OCR Scan     		IRF9530 O-220 -100V IRF9530 IRF9530 mosfet IRF953Q 25Q 328 320G k17c IRF9530 international PDF

    IRF9530 mosfet circuit diagram

    Abstract: IRF9530 mosfet irf9530 IRF9531 IRF9532 iaf9530 40C1 IRF9533 040c1 92CS-43262
    Text: Rugged Power MOSFETs File Number 2221 IRF9530, IRF9531 IRF9532, IRF9533 Avalanche-Energy-Rated P-Channel Power MOSFETs TE R M IN A L DIAGRAM -1 0 A , a n d -1 2 A , -6 0 V a n d -1 0 0 V rDsiom = 0 .3 0 Q a n d 0 .4 0 0 Features: • S ingle pulse avalanche e n ergy rated


    OCR Scan     		IRF9530, IRF9531 IRF9532, IRF9533 -100V 92CS-43262 IRF9531, IRF9532 IRF9533 IRF9530 mosfet circuit diagram IRF9530 mosfet irf9530 IRF9531 iaf9530 40C1 040c1 92CS-43262 PDF

    F9530

    Abstract: 9533E IRF9530
    Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated


    OCR Scan     		IRF9530, IRF9533 -100V IRF9531, IRF9532 IRF9533 IRF9532, F9533 92CS-43327 F9530 9533E IRF9530 PDF

    P-Channel FET 100v

    Abstract: IRF9530 IRF9530* p-channel power MOSFET IRF9530 mosfet IRF9530SMD 100v p-channel power mosfet
    Text: IRF9530-220M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 -100V -9.3A 0.31W FEATURES


    Original     		IRF9530-220M -100V Puls565. IRF9530" IRF9530-220M IRF9530SMD O257AB O220M) P-Channel FET 100v IRF9530 IRF9530* p-channel power MOSFET IRF9530 mosfet 100v p-channel power mosfet PDF

    hf class AB power amplifier mosfet

    Abstract: AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier
    Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		AN-948 hf class AB power amplifier mosfet AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier PDF

    IRF9530 mosfet circuit diagram

    Abstract: AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet
    Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		AN-948 IRF9530 mosfet circuit diagram AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet PDF

    amplifier circuit diagram

    Abstract: HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002
    Text: Index AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		AN-948 amplifier circuit diagram HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    1610c

    Abstract: synchronous reluctance
    Text: IXYS_ _ High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C The IXMS 150 is a high performance monolithic 2-channel PWM controller. Implemented in CMOS, the low power


    OCR Scan     		IXMS150 24-Pin IRF9530 IRF532 1610C UR410 1N4148 synchronous reluctance PDF

    micro servo motor 90 degree

    Abstract: MUR161OCT 10a h-bridge driver 50 amp H-bridge Mosfet stepping motor coil construction 1.8 degree BIPOLAR stepper motor drive motor 10A with transistor P channel MOSFET SPEED CONTROL of DC MOTOR using 3 phase bridge controller 10 amp H-bridge Mosfet stepper 1N4148
    Text: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C The IXMS150 is a high performance monolithic 2-channel PWM controller. Implemented in CMOS, the low power IXMS150 precisely controls the current


    Original     		IXMS150 24-Pin IXMS150 IRF9530 IRF532 MUR161OCT MUR410 1N4148 micro servo motor 90 degree MUR161OCT 10a h-bridge driver 50 amp H-bridge Mosfet stepping motor coil construction 1.8 degree BIPOLAR stepper motor drive motor 10A with transistor P channel MOSFET SPEED CONTROL of DC MOTOR using 3 phase bridge controller 10 amp H-bridge Mosfet stepper PDF

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R PDF

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF