IRF9530
Abstract: IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power
Text: P-CHANNEL POWER MOSFETS IRF9530/9531/9532/9533 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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OCR Scan
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IRF9530/9531/9532/9533
IRF9530
IRF9531
IRF9532
F9533
IRF9530 mosfet
F9530
diode 9532
IRF9530,
IRF9530 P-channel power
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PDF
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P-Channel FET 100v
Abstract: IRF9530 IRF9530* p-channel power MOSFET IRF9530 mosfet IRF9530SMD 100v p-channel power mosfet
Text: IRF9530-220M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 -100V -9.3A 0.31W FEATURES
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Original
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IRF9530-220M
-100V
Puls565.
IRF9530"
IRF9530-220M
IRF9530SMD
O257AB
O220M)
P-Channel FET 100v
IRF9530
IRF9530* p-channel power MOSFET
IRF9530 mosfet
100v p-channel power mosfet
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PDF
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of
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Original
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IRF9530,
RF1S9530SM
TA17511.
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
JEDEC TO-263A
IRF9530 fairchild
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PDF
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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Original
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IRF9530,
RF1S9530SM
IRF95
530SM
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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IRF9530/9531
O-220
IRF9530
-100V
IRF9531
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PDF
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IRF9610
Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540
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OCR Scan
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O-220
IRF9512
TQ-220AB
IRF9510
IRF9522
IRF9520
IRF9532
IRF9530
IRF9542
IRF9540
IRF9610
IRFP143
IRF9612
IRFP240
THOMSON DISTRIBUTOR 58e d
IRFP142
IRFP141
IRFP243
THOMSON 58E
THOMSON 58E CASE OUTLINE
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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f9530
Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
Text: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area
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OCR Scan
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IRF9530/9531
/9532Z9533
IRFP9130/9131
O-220
F9530/9531
F9531
/IRFP91
IRFP9130/91
IRF9530/9531/9532/9533
IRFP9130/9131/9132/9133
f9530
IRF9530
L 9132
diode 9532
IRF9530 mosfet
IRF9530* p-channel power MOSFET
9532 mosfet
IR mosfets
OA 91 diode
ir 9133
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PDF
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transistor mosfet irf9530
Abstract: IRF9530 transistor irf9530
Text: Tem ic IRF9530 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) -1 0 0 0.30 -1 2 TO-220AB “ Ö " Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Parameter Symbol
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OCR Scan
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IRF9530
O-220AB
P-36852--Rev.
transistor mosfet irf9530
IRF9530 transistor
irf9530
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PDF
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1rf9530
Abstract: IRF9530 mosfet 25C1 320G IRF9530 International Rectifier 326 ScansUX102 IRF9530 international
Text: PD-9.320G International übHRectifier IRF9530 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channef 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS=-1 00 V
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OCR Scan
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IRF9530
O-220
-100V
1rf9530
IRF9530 mosfet
25C1
320G
International Rectifier 326
ScansUX102
IRF9530 international
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PDF
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f9530
Abstract: No abstract text available
Text: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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IRF9530,
IRF9531,
IRF9532,
IRF9533,
RF1S9530,
RF1S9530SM
-100V,
-100V
f9530
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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IRF9530
Abstract: IRF9530 mosfet IRF953Q 25Q 328 320G k17c IRF9530 international
Text: PD-9.320G International S Rectifier IRF9530 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -100V ^DS on = 0.30Q
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OCR Scan
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IRF9530
O-220
-100V
IRF9530
IRF9530 mosfet
IRF953Q
25Q 328
320G
k17c
IRF9530 international
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF9530,
RF1S9530SM
-100V,
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PDF
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IRF9530
Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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IRF9530,
RF1S9530SM
TA17511.
IRF9530
dc motor 9v
DATA SHEET IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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PDF
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IRF9530
Abstract: IRF9530PBF IRF9530 mosfet
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
O-220
O-220
18-Jul-08
IRF9530
IRF9530PBF
IRF9530 mosfet
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PDF
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IRF9530 international
Abstract: irf9530
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
O-220
O-220
12-Mar-07
IRF9530 international
irf9530
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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IRF9530
Abstract: IRF9530 mosfet
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9530
IRF9530 mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRF9530,
SiHF9530
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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1rf9530
Abstract: No abstract text available
Text: International k? r Rectifier HEXFET Pow er M O S F E T 4655452 □D14642 33E PD-9.320G IINR IRF9530 INTERNATIONAL RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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D14642
IRF9530
O-220
1rf9530
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PDF
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