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    IRF9530 TRANSISTOR Search Results

    IRF9530 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF9530 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9530 mosfet

    Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		PDF IRF9530, RF1S9530SM TA17511. IRF9530 mosfet IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild

    IRF9530 mosfet

    Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF9530, RF1S9530SM IRF95 530SM IRF9530 mosfet IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334

    IRF9530

    Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF9530, RF1S9530SM TA17511. IRF9530 dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334

    IRF9530

    Abstract: IRF9531 IRF9530 mosfet
    Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    Original     		PDF IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9530 IRF9531 IRF9530 mosfet

    Untitled

    Abstract: No abstract text available
    Text: LT1166 Power Output Stage Automatic Bias System U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1166 is a bias generating system for controlling class AB output current in high powered amplifiers. When connected with external transistors, the circuit becomes a


    Original     		PDF LT1166 LT1166 LT1206 250mA/60MHz LT1210 A/40MHz LT1270A LT1360 50MHz,

    12v 1200W AUDIO AMPLIFIER

    Abstract: 100w audio amplifier 12v 1200W DC POWER SUPPLY SCHEMATIC IRF9530 mosfet pin details audio amp 350w high power fet audio amplifier schematic 1200w power amplifier 1200w amplifier 300w audio amp schematic 1200w audio amplifier
    Text: LT1166 Power Output Stage Automatic Bias System U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1166 is a bias generating system for controlling class AB output current in high powered amplifiers. When connected with external transistors, the circuit becomes a


    Original     		PDF LT1166 LT1166 LT1206 250mA/60MHz LT1210 A/40MHz LT1270A LT1360 50MHz, 12v 1200W AUDIO AMPLIFIER 100w audio amplifier 12v 1200W DC POWER SUPPLY SCHEMATIC IRF9530 mosfet pin details audio amp 350w high power fet audio amplifier schematic 1200w power amplifier 1200w amplifier 300w audio amp schematic 1200w audio amplifier

    hf class AB power amplifier mosfet

    Abstract: AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier
    Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		PDF AN-948 hf class AB power amplifier mosfet AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier

    IRF9530 mosfet circuit diagram

    Abstract: AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet
    Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		PDF AN-948 IRF9530 mosfet circuit diagram AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet

    amplifier circuit diagram

    Abstract: HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002
    Text: Index AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		PDF AN-948 amplifier circuit diagram HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002

    LTC1239

    Abstract: 2N2222 MPS2222 IRF9530 mosfet pin details LT13755 lt1166 SURFACE MOUNT DIODES MIL GRADE LT1175-5 IRF9530 mosfet circuit diagram 2N2222 2N2907
    Text: LinearTechnologyChronicle A Showcase of Linear Technology's Focus Products February 1996 Product of the Month New IC Provides Automatic Bias for Power Amplifier Circuits The LT 1166 is a bias generating circuit for controlling class AB output current in high powered amplifiers. When connected


    Original     		PDF LT1166 LTC1239 LT1239 1-800-4-LINEAR LTC1239 2N2222 MPS2222 IRF9530 mosfet pin details LT13755 SURFACE MOUNT DIODES MIL GRADE LT1175-5 IRF9530 mosfet circuit diagram 2N2222 2N2907

    AMPLIFIER 1800w

    Abstract: "class AB Linear" 50mhz LT1166 power amplifier mosfet up to 50mhz IRF9240 LTC1759 IRF9530 mosfet Linear Technology Magazine Circuit Collection LT1364 LT1795
    Text: LinearTechnologyChronicle September 1999 A Showcase of Linear Technology’s Focus Products Product of the Month 100MHz Dual Op Amp is Low Power, Accurate and Low Noise—LT1813 Table 1. LT1813: More Than Just High Speed PARAMETER LT1813 UNITS Gain Bandwidth


    Original     		PDF 100MHz Noise--LT1813 LT1813 LT1813 LT1813: 1-800-4-LINEAR AMPLIFIER 1800w "class AB Linear" 50mhz LT1166 power amplifier mosfet up to 50mhz IRF9240 LTC1759 IRF9530 mosfet Linear Technology Magazine Circuit Collection LT1364 LT1795

    ADR291

    Abstract: ADR292 ADR293 ADR293ERZ ADR293ERZ-REEL ADR293GRZ IRF9530 MS-012-AA OP20 REF19x Series
    Text: Low Noise, Micropower 5.0 V Precision Voltage Reference ADR293 FEATURES PIN CONFIGURATIONS 6.0 V to 15 V supply range Supply current: 15 A maximum Low noise: 15 μV p-p typical 0.1 Hz to 10 Hz High output current: 5 mA Temperature range: −40°C to +125°C


    Original     		PDF ADR293 REF02/REF19x D00164-0-5/11 ADR291 ADR292 ADR293 ADR293ERZ ADR293ERZ-REEL ADR293GRZ IRF9530 MS-012-AA OP20 REF19x Series

    ADR290

    Abstract: ADR291 ADR292 ADR293 ADR293ER ADR293ER-REEL ADR293FR ADR293FR-REEL ADR293GR ADR293GR-REEL
    Text: a Preliminary Low-Noise Micropower Precision Voltage Reference ADR293 PIN CONFIGURATIONS 8-Lead Narrow Body SO R Suffix FEATURES Voltage Output 5.0 V 5.5 V to 15 V Supply Range Supply Current 20 ␮A max Initial Accuracy ؎3 mV max Temperature Coefficient 8 ppm/؇C max


    Original     		PDF ADR293 REF02/REF19x ADR290 ADR291 ADR292 ADR293 ADR293ER ADR293ER-REEL ADR293FR ADR293FR-REEL ADR293GR ADR293GR-REEL

    irf9530

    Abstract: irf 9530 f953
    Text: IRF9530/9531 /9532/9533 c r S ilic a n ix in c o rp o ra te d P-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V) lDS(ON) ( il) (A) IRF9530 -100 0.30 -1 2 IRF9531 -6 0 0.30 -1 2 IRF9532 -100 0.40 -10 IRF9533


    OCR Scan     		PDF IRF9530/9531 O-22QAB IRF9530 IRF9531 IRF9532 IRF9533 Ener33 F9531, IRF953 irf 9530 f953

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF9530, RF1S9530SM -100V,

    f9530

    Abstract: No abstract text available
    Text: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, -100V f9530

    irf9530

    Abstract: irf9532 JEDEC TO-263A IRF9531
    Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9532 irf9530 JEDEC TO-263A IRF9531

    IRF9530 mosfet circuit diagram

    Abstract: IRF9530 mosfet irf9530 IRF9531 IRF9532 iaf9530 40C1 IRF9533 040c1 92CS-43262
    Text: Rugged Power MOSFETs File Number 2221 IRF9530, IRF9531 IRF9532, IRF9533 Avalanche-Energy-Rated P-Channel Power MOSFETs TE R M IN A L DIAGRAM -1 0 A , a n d -1 2 A , -6 0 V a n d -1 0 0 V rDsiom = 0 .3 0 Q a n d 0 .4 0 0 Features: • S ingle pulse avalanche e n ergy rated


    OCR Scan     		PDF IRF9530, IRF9531 IRF9532, IRF9533 -100V 92CS-43262 IRF9531, IRF9532 IRF9533 IRF9530 mosfet circuit diagram IRF9530 mosfet irf9530 IRF9531 iaf9530 40C1 040c1 92CS-43262

    F9530

    Abstract: 9533E IRF9530
    Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9530, IRF9533 -100V IRF9531, IRF9532 IRF9533 IRF9532, F9533 92CS-43327 F9530 9533E IRF9530

    F9530

    Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
    Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s


    OCR Scan     		PDF T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    IRF9530 Harris

    Abstract: No abstract text available
    Text: HARRIS £ * H A SEmCOND R R SECTOR 430 2 27 1 o a s i i a a 54T bflE D PCF12P10W PCF12P10D I S SEMI C ON DU C T O R P-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain-Tri-Metal AI-TI-Ni)


    OCR Scan     		PDF PCF12P10W PCF12P10D MII-Std-750, RFP12P10 IRF9530 IRF9130 2N6849 PCF12P10D 1-800-4-HARRIS IRF9530 Harris

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240