Untitled
Abstract: No abstract text available
Text: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =
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IRF9Z24N
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IRf 48 MOSFET
Abstract: IRF9Z24N
Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier
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1484B
IRF9Z24N
O-220
IRf 48 MOSFET
IRF9Z24N
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Untitled
Abstract: No abstract text available
Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier
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1484B
IRF9Z24N
O-220
appli245,
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IRF9Z24N
Abstract: P-Channel irf IRf 48 MOSFET
Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier
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1484B
IRF9Z24N
O-220
IRF9Z24N
P-Channel irf
IRf 48 MOSFET
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Untitled
Abstract: No abstract text available
Text: IRF9Z24N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
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IRF9Z24N
O-220AB
O-220
O-220
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f9z24
Abstract: No abstract text available
Text: PD-9.1484A International I O R Rectifier IRF9Z24N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55 V R iDS on = 0.1750 lD = -12A
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IRF9Z24N
O-220
C-278
C-279
f9z24
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irf9z24n
Abstract: No abstract text available
Text: PD -9.1484 International IQ R Rectifier IRF9Z24N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss V = -5 5 R ü S o n = 0 . 1 7 5 Q
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IRF9Z24N
irf9z24n
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IRf 48 MOSFET
Abstract: IRF9Z24N
Text: PD -9.1484A IRF9Z24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier
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IRF9Z24N
O-220
IRf 48 MOSFET
IRF9Z24N
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F1010
Abstract: IRF9Z24N 2D 1002 diode IRf9z24n P-channel power
Text: PD -9.1484A International IGR Rectifier IRF9Z24N PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q s s = -55 V
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IRF9Z24N
F1010
IRF9Z24N
2D 1002 diode
IRf9z24n P-channel power
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
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AUIRFR9024N
AUIRFU9024N
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U5505
Abstract: AUFR5505 P-Channel MOSFET 800v AUIRFR5505 AUIRFU5505
Text: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRFR5505
AUIRFU5505
U5505
AUFR5505
P-Channel MOSFET 800v
AUIRFR5505
AUIRFU5505
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Untitled
Abstract: No abstract text available
Text: PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRFR5505
AUIRFU5505
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u9024n
Abstract: AUFR9024N AUIRFR9024N AUIRFU9024N AUIRFR9024NTR marking code H1a AUIRFR AUFR902
Text: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
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AUIRFR9024N
AUIRFU9024N
u9024n
AUFR9024N
AUIRFR9024N
AUIRFU9024N
AUIRFR9024NTR
marking code H1a
AUIRFR
AUFR902
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IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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