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    IRFD 120 Search Results

    IRFD 120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL9011AIRFDZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014AIRFDZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014AIRFDZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9000AIRFDZ Renesas Electronics Corporation Dual LDO with Low Noise, Very High PSRR, and Low IQ Visit Renesas Electronics Corporation
    ISL9012IRFDZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
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    IRFD 120 Price and Stock

    Vishay Siliconix IRFD120

    MOSFET N-CH 100V 1.3A 4DIP
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    Vishay Siliconix IRFD120PBF

    MOSFET N-CH 100V 1.3A 4DIP
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    Component Electronics, Inc IRFD120PBF 92
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    Vishay Intertechnologies IRFD120PBF

    Trans MOSFET N-CH 100V 1.3A 4-Pin HVMDIP
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    Verical IRFD120PBF 1,829 37
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    TME IRFD120PBF 415 1
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    International Rectifier IRFD120

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    Bristol Electronics IRFD120 8,027
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    IRFD120 214 7
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    Quest Components IRFD120 1,233
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    Component Electronics, Inc IRFD120 5
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    Harris Semiconductor IRFD120

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    Bristol Electronics IRFD120 655 3
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    Find more IRFD 120 price and stock on Findchips.com

    IRFD 120 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD120 Fairchild Semiconductor N-Channel Power MOSFET Original PDF
    IRFD120 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD120 Intersil 1.3A, 100V, 0.300 ?, N-Channel Power MOSFET Original PDF
    IRFD120 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD120 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.3A 4-DIP Original PDF
    IRFD120 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD120 Harris Semiconductor (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs Scan PDF
    IRFD120 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD120 International Rectifier Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) Scan PDF
    IRFD120 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD120 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD120 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD120 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD120 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 1.3A, Pkg style HEXDIP Scan PDF
    IRFD120 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD120 Motorola (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package Scan PDF
    IRFD120 Motorola Switchmode Datasheet Scan PDF
    IRFD120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD120 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD120 Unknown FET Data Book Scan PDF

    IRFD 120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD121

    Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
    Text: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    OCR Scan     		PDF IRFD121, TB334 IRFD121 TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120

    1rfd9120

    Abstract: IRFD9120 00LQ
    Text: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =


    OCR Scan     		PDF IRFD9120 -100v 0-60Q 150KQ 1rfd9120 00LQ

    Untitled

    Abstract: No abstract text available
    Text: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements


    OCR Scan     		PDF 4A5545E

    1RFD123

    Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
    Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD120/121/122/123 12OR/121R/122R/123R IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, IRFD123R 1RFD123 IRFD 123R fd120 IRFD 120 IRFD 123

    Untitled

    Abstract: No abstract text available
    Text: • 43 05 57 1 0 0 5 4 0 ^ 5 SSI ■ HAS IRFD12 0 /1 2 1 /1 2 2 /1 2 3 IRFD120R/121R/122R/123R I HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4-PIN DIP TO P VIEW • 1.3A and 1.1 A, 80V - 100V • rDS(on) = 0-30n and 0.40ii


    OCR Scan     		PDF IRFD12 IRFD120R/121R/122R/123R 0-30n IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R,

    1RFD110

    Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
    Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111

    1RFD120

    Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
    Text: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode


    OCR Scan     		PDF IRFD210 IRFD211 IRFD212 IRFD213 I0I01Â 1RFD120 6ati T3B diode 2s4 4pin XSTR

    irfd123

    Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
    Text: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:


    OCR Scan     		PDF IRFD120R, IRFD121R, IRFD122R, IRFD123R 0V-100V IRFD122R IRFD123R irfd123 2501a IRFD120R IRFD121R IRF012

    IRFD220

    Abstract: 1RFD220 IRF022 IRFD221 IRFD222 IRFD223 F14E diode. f-14e
    Text: MOTOROLA SC X S T R S /R F IM E D I b3b?aS4 G G Ö ci ? 2 3 fl | MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA IR F D 2 2 0 IRFD221 IR F D 2 2 2 IR F D 2 2 3 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n sisto rs N -Ch ann el Enh an cem en t-M ode


    OCR Scan     		PDF IRFD220 IRFD221 IRFD222 IRFD223 PERY145M, 1RFD220 IRF022 IRFD223 F14E diode. f-14e

    IRF8C30

    Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
    Text: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)


    OCR Scan     		PDF IRFAF50 O-204AA IRFAF52 1RFAG40 RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRF8C30 mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAG50

    mosfet k 2038

    Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R
    Text: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRFD220R, IRFD221R, IRFD222R, IRFD223R 50V-200V IRFD222R IRFD223R mosfet k 2038 250M IRFD220R IRFD221R

    Untitled

    Abstract: No abstract text available
    Text: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 ODSMSTE 05? ■ HAS IRFD9220 IRFD9223 ¡3 H a r r is Avalanche Energy Rated P-Channel Power M O SFETs January 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -0.45A and -0.6A, -150V and -200V TOP VIEW • rDS ON = 1-5H and 2.4CÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRFD9220 IRFD9223 -150V -200V 550Eti

    IRF09120

    Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
    Text: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-37-25 IRFD9120 IRFD91S3 C-169 IRFD9120, IRFD9123 C-170 IRF09120 RFD9120 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123

    irfd210

    Abstract: 440 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD210 IRFD213 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline |T I I TM OS


    OCR Scan     		PDF IRFD210 IRFD213 IRFD210 IRFD213 440 motorola

    diode 222r

    Abstract: MOSFET 4407 a circuit 4407
    Text: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*


    OCR Scan     		PDF IRFD220R/221R/222R/223R diode 222r MOSFET 4407 a circuit 4407

    24v cfl ballast

    Abstract: No abstract text available
    Text: UC1872 UC2872 UC3872 y UNITRODE Resonant Lamp Ballast Controller FEATURES DESCRIPTION • The UC3872 is a resonant lamp ballast controller optimized for driving cold cathode fluorescent, neon, and other gas discharge lamps. The reso­ nant power stage develops a sinusoidal lamp drive voltage, and mini­


    OCR Scan     		PDF UC1872 UC2872 UC3872 UC3872 UC3872, 24v cfl ballast

    Untitled

    Abstract: No abstract text available
    Text: R G L34A THRU SEMICONDUCTOR TECHNICAL DATA FORWARDINTERNATIONAL ELECTRONICS LUX RGL34J TECHNICAL SPECIFICATIONS O F SURFACE M O U N T FAST RECOVERY RECTIFIER VOLTAGE RANGE - 50 to 600 Volts CURRENT •0.5 Ampere FEATURES * Id ea l for s u rfa c e m o u n t e d a p p l i c a t i o n s


    OCR Scan     		PDF RGL34J DG-213AA)

    IRFD321

    Abstract: IRFD322 IRFD323 transistor d722 IRFD320 irf032
    Text: Standard Power MOSFETs- IRFD320, IRFD321, IRFD322, IRFD323 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 0.5 A and 0.4 A, 350 V - 400 V


    OCR Scan     		PDF IRFD320, IRFD321, IRFD322, IRFD323 92CS-33741 IRFD323 IRFD321 IRFD322 transistor d722 IRFD320 irf032

    IRFD311

    Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v
    Text: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFD310, IRFD311, IRFD312, IRFD313 IRFD313 IRFD311 FD31 IRFD310 IRFD312 a350v

    3 phase inverter 180 degree conduction mode wave

    Abstract: fx4054 FX4053 NMHR ETD49 12v 2K3906 h bridge irf740 inverter using irfz44 12v center tap transformer fx4054 core
    Text: APPLICATION NOTE 960A A 250 Watt Current-Controlled SMPS With Synchronous Rectification H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs by Ft. Pearce, D. Grant Introduction This application note illustrates ways in w hich In te rn a tio n a l R ectifier’s


    OCR Scan     		PDF AN-960A 3 phase inverter 180 degree conduction mode wave fx4054 FX4053 NMHR ETD49 12v 2K3906 h bridge irf740 inverter using irfz44 12v center tap transformer fx4054 core

    irfd113

    Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
    Text: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFD110R, IRFD111R, IRFD112R, IRFD113R 0V-100V 92CS-42698 IRFD112R IRFD113R irfd113 IRFD110R IRFD111R IRFD111

    SE-TIME

    Abstract: DO-213AA RGL34A RGL34D RGL34G RGL34J
    Text: R G L34A THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LUX RGL34J TECHNICAL SPECIFICATIONS OF SURFACE MOUNT FAST RECOVERY RECTIFIER CURRENT -0.5 Ampere VOLTAGE RANGE - 50 to 600 Volts FEATURES ' Id e a l for s u r la c e m o u n t e d a p p lic a t io n s


    OCR Scan     		PDF RGL34A RGL34J MlL-STD-202E, DO-213AA) 33Dus SE-TIME DO-213AA RGL34A RGL34D RGL34G RGL34J

    relay ras 1210

    Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4
    Text: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRFD210R, IRFD211R, IRFD212R, IRFD213R 50V-200V 2CS-42CSÂ IRFD212R IRFD213R relay ras 1210 tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R 03a s4