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    IRFD212 Search Results

    IRFD212 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD212 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD212 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD212 Harris Semiconductor 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS Scan PDF
    IRFD212 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD212 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD212 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD212 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD212 Unknown FET Data Book Scan PDF
    IRFD212 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD212 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD212(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD212R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD212R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD212R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD212 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    irf630 irf640

    Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
    Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший


    Original     		PDF 220AB 0RFP25N05 RFP50N05 RFP22N10 RFP40N10 IRFP450 IRFP460 IRFPG40 IRF9510 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF

    IRFD

    Abstract: IRFD210 D210 IRFD211 IRFD212 IRFD213
    Text: Standard Power MOSFETs- IRFD210, IRFD211, IRFD212, IRFD213 File Number 2316 Power M O S Field-Effect Transistore N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistore 0.45 A and 0.6 A, 150 V - 200 V


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 92CS-33741 IRFD213 IRFD IRFD210 D210 IRFD211 IRFD212

    relay ras 1210

    Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4
    Text: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRFD210R, IRFD211R, IRFD212R, IRFD213R 50V-200V 2CS-42CSÂ IRFD212R IRFD213R relay ras 1210 tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R 03a s4

    TB334

    Abstract: IRFD210 IRFD211 IRFD212 IRFD213 rfd2
    Text: i H A R R IRFD210, IRFD211, IRFD212, IRFD213 i s s e m i c o n d u c t o r 0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.6A and 0.45A, 150V and 200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 TB334 TB334 IRFD210 IRFD211 IRFD212 IRFD213 rfd2

    irfd211

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IR FD 210 IRFD211 IRFD212 IRFD213 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 1.5 O HM 200 VOLTS T h e s e T M O S F E T s a r e d e s ig n e d f o r lo w v o lt a g e , h ig h


    OCR Scan     		PDF IRFD211 IRFD212 IRFD213

    IRFD212

    Abstract: IRFD213
    Text: Ftmr IRFD212,213 HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.45 AMPERES 200,150 VOLTS


    OCR Scan     		PDF 00A/aà IRFD212 IRFD213

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


    OCR Scan     		PDF IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054105 T20 ■ 23 HARRIS HAS IRFD210/211/212/213 IRFD21 OR/211R/212R/213R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1991 Features Package 4 -P IN D IP • 0.6A and 0.45A, 1SOV - 200V TOP VIEW • rDS on = 1-5 fl an(l 2-4 fl • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD210/211/212/213 IRFD21 OR/211R/212R/213R IRFD210, IRFD211, IRFD212, IRFD213 IRFD210R, IRFD211R, IRFD212R,

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    FD213

    Abstract: No abstract text available
    Text: 3 ] H A R R I S ÎR F D 2 1 0 /2 1 1 /2 1 2 /2 1 3 IR F D 2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP TOP VIEW • 0.6A and 0.45A, 150V - 200V • rDS on = 1-5 fl and 2-4 n


    OCR Scan     		PDF 1RFD213 FD213

    mfe9200

    Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
    Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    IRF8C30

    Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
    Text: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ


    OCR Scan     		PDF IRFAF50 O-204AA IRFAF52 1RFAG40 RFZ42 O-220AB IRFZ44 MFE910 IRF8C30 MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAG50 IRFBC32

    MPF89

    Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max


    OCR Scan     		PDF IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9120 IRFD9121 IRFD9210 IRFD9213 IRFD91103 MPF89 MPF6659 2 watt fet MPF910 IRFD9110

    1RFD120

    Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
    Text: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode


    OCR Scan     		PDF IRFD210 IRFD211 IRFD212 IRFD213 I0I01Â 1RFD120 6ati T3B diode 2s4 4pin XSTR

    irfd210

    Abstract: 440 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD210 IRFD213 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline |T I I TM OS


    OCR Scan     		PDF IRFD210 IRFD213 IRFD210 IRFD213 440 motorola

    1RFZ40

    Abstract: MFE9200 1rfz44 1RFD123 irfz12 IRF145 irfu9220 irfu9222 IRFZ45 IRH450
    Text: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Ciss Coss Crss ft & *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Id (A) m % Vd s (V) ínA) Vg s (V) 1R F Z 3 5 IR N


    OCR Scan     		PDF Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 MFE9200 1rfz44 1RFD123 irfz12 IRF145 irfu9220 irfu9222 IRFZ45 IRH450

    1RFD123

    Abstract: 1rfz42 MFE9200 IRF022 IRFZ30 D121 IRFD120 IRFD122 IRFD210 IRFD212
    Text: - 276 - f m * M € tt € Vd s or + Vd g % V «e % £ té {Ta=25°C) Vg s Id (V) 1GSS Pd * /CH (A) V g s th) 1DSS CnA) m Vg s (V) ( M A) Vd s (V) fë £ (Ta=25'C) Id (oîi) Id (mA) Ciss Coss Crss (*typ) (*typ) (max) (pF) (max) (pF) (*typ) (max) (pF) ft


    OCR Scan     		PDF IRFD120 CASE370-01 IRFD122 25RFZ42 O-220AB IRFZ44 MFE910 O-205AD 1RFD123 1rfz42 MFE9200 IRF022 IRFZ30 D121 IRFD210 IRFD212

    IRFD210

    Abstract: IRFD211 IRFD212 IRFD213
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD210 IRFD213 TMOS Field Effect TVansistor Dual In-Line Package N-Channel Enhancement Mode TM O S FET TR A NSISTO R S FET DIP Ideal fo r Peripheral C onlrol Applications Interm ediate 1 W att Power C apability Standard DIP O utline


    OCR Scan     		PDF IRFD210 IRFD213 IRFD213 IRFD210 IRFD211 IRFD212

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    1RFP250

    Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
    Text: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32


    OCR Scan     		PDF 000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241