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    IRFD220 Price and Stock

    Vishay Siliconix IRFD220

    MOSFET N-CH 200V 800MA 4DIP
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    DigiKey IRFD220 Tube
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    Bristol Electronics IRFD220 1,672
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    Quest Components IRFD220 1,337
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    IRFD220 116
    • 1 $3.52
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    Rochester Electronics LLC IRFD220

    0.8A 200V 0.800 OHM N-CHANNEL
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    DigiKey IRFD220 Bulk 579
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    Vishay Siliconix IRFD220PBF

    MOSFET N-CH 200V 800MA 4DIP
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    DigiKey IRFD220PBF Bulk 2,500
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    RS IRFD220PBF Bulk 2,500
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    Vishay Intertechnologies IRFD220PBF

    Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
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    Verical IRFD220PBF 1,715 12
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    Arrow Electronics IRFD220PBF 1,715 18 Weeks 1
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    Newark IRFD220PBF Bulk 2,500
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    RS IRFD220PBF Bulk 1
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    Bristol Electronics IRFD220PBF 9
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    TTI IRFD220PBF Tube 4,000 100
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    TME IRFD220PBF 528 1
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    ComSIT USA IRFD220PBF 400
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    EBV Elektronik IRFD220PBF 13 Weeks 100
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    New Advantage Corporation IRFD220PBF 400 1
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    Vishay Semiconductors IRFD220PBF

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    Onlinecomponents.com IRFD220PBF 1,374
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    Find more IRFD220 price and stock on Findchips.com

    IRFD220 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD220 Fairchild Semiconductor 0.8a 200v 0.800 Ohm N-channel Power Mosfet Original PDF
    IRFD220 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD220 Intersil 0.8A, 200V, 0.800 ?, N-Channel Power MOSFET Original PDF
    IRFD220 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD220 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 800MA 4-DIP Original PDF
    IRFD220 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD220 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD220 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD220 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD220 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD220 International Rectifier Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A) Scan PDF
    IRFD220 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, .8A, Pkg Style HEXDIP Scan PDF
    IRFD220 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD220 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRFD220 Motorola 1 Watt TMOS FETs Scan PDF
    IRFD220 Motorola Switchmode Datasheet Scan PDF
    IRFD220 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD220 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD220 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD220 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    IRFD220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFD220 Data Sheet Title FD 0 bt 8A, 0V, 00 m, July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD220 TB334

    IRFD220

    Abstract: SiHFD220-E3 IRFD220PBF
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 2002/95/EC 18-Jul-08 IRFD220 SiHFD220-E3 IRFD220PBF

    IRFD220PBF

    Abstract: IRFD220 SiHFD220 SiHFD220-E3
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 18-Jul-08 IRFD220PBF IRFD220 SiHFD220-E3

    IRFD220

    Abstract: No abstract text available
    Text: IRFD220, IRFD221, IRFD222, IRFD223 S E M I C O N D U C T O R 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD220, IRFD221, IRFD222, IRFD223 TA09600. IRFD220

    SiHFD220

    Abstract: No abstract text available
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 12-Mar-07

    4501m

    Abstract: AN609 IRFD220
    Text: IRFD220_RC, SiHFD220_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD220 SiHFD220 AN609, 0426m 8968m 4501m 6212m 25-Oct-10 4501m AN609

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95917 IRFD220PbF • Lead-Free Document Number: 91131 10/27/04 www.vishay.com 1 IRFD220PbF Document Number: 91131 www.vishay.com 2 IRFD220PbF Document Number: 91131 www.vishay.com 3 IRFD220PbF Document Number: 91131 www.vishay.com 4 IRFD220PbF Document Number: 91131


    Original     		PDF IRFD220PbF 12-Mar-07 IRFD120

    IRFD220PBF

    Abstract: IRFD120
    Text: PD- 95917 IRFD220PbF • Lead-Free www.irf.com 1 10/27/04 IRFD220PbF 2 www.irf.com IRFD220PbF www.irf.com 3 IRFD220PbF 4 www.irf.com IRFD220PbF www.irf.com 5 IRFD220PbF 6 www.irf.com IRFD220PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original     		PDF IRFD220PbF IRFD120 IRFD220PBF IRFD120

    IRFD220

    Abstract: No abstract text available
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 2002/95/EC 11-Mar-11 IRFD220

    Untitled

    Abstract: No abstract text available
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFD220

    Abstract: TB334
    Text: IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 0.8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD220 IRFD220 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 2002/95/EC 18-Jul-08

    IRFD220

    Abstract: TB334 la 4287
    Text: IRFD220 Data Sheet July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 0.8A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFD220 TB334 TA09600. IRFD220 TB334 la 4287

    Untitled

    Abstract: No abstract text available
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFD220

    Abstract: Transistors c-3229 C 3229 IRFD221 D220 IRFD222 IRFD223
    Text: - Standard Power MOSFETs File Number IRFD220, IRFD221, IRFD222, IRFD223 23117 Power MOS Field-Effect Transistors N -C H A N N EL ENHAN C EM EN T MODE


    OCR Scan     		PDF IRFD220, IRFD221, IRFD222, IRFD223 92CS-3374I IIRFD221, IRFD223 IRFD220 Transistors c-3229 C 3229 IRFD221 D220 IRFD222

    fd220

    Abstract: IRFD220 IRFD221 1RFD220
    Text: IRFD220,221 D82CN2.M2 iPSMM-iiæa Mûr FIELD EFFECT POWER TRANSISTOR This series of NhChannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		PDF IRFD220 P82CN2 ruggedness600 00A//US, fd220 IRFD221 1RFD220

    Untitled

    Abstract: No abstract text available
    Text: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFD220, IRFD221, IRFD222, IRFD223

    diode 222r

    Abstract: MOSFET 4407 a circuit 4407
    Text: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*


    OCR Scan     		PDF IRFD220R/221R/222R/223R diode 222r MOSFET 4407 a circuit 4407

    IRFD221

    Abstract: 3203 MOSFET
    Text: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit


    OCR Scan     		PDF IRFD220-223 IRFD220, IRFD221 IRFF110 IRFF113 IRFF113 3203 MOSFET

    rectifier s4 79

    Abstract: diode t7e irfd220
    Text: International SMI Rectifier 4 ÔS S4 S5 GÜ1S0MÜ I T T H IN R PD-9.417F IRFD220 INTERNATIONAL HEXFET Power MOSFET b5E RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF IRFD220 rectifier s4 79 diode t7e irfd220

    irfd220

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD220 IRFD223 TMOS Field Effect Transistors Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline T TMOS TMOS FET TRANSISTORS


    OCR Scan     		PDF IRFD220 IRFD223 IRFD223

    mosfet k 2038

    Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R
    Text: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRFD220R, IRFD221R, IRFD222R, IRFD223R 50V-200V IRFD222R IRFD223R mosfet k 2038 250M IRFD220R IRFD221R

    IRFD220

    Abstract: 417F
    Text: International S Rectifier PD-9.417F IRFD220 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V ^DS on = 0 -8 0 Q


    OCR Scan     		PDF IRFD220 IRFD220 417F