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    IRFD312 Search Results

    IRFD312 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD312 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD312 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD312 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD312 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD312 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD312(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD312R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD312R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD312R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD312 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD312R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)300m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		IRFD312R PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD312 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)300m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		IRFD312 PDF

    irfd310

    Abstract: No abstract text available
    Text: IRFD310, IRFD311, IRFD312, IRFD313 S E M I C O N D U C T O R 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRFD310, IRFD311, IRFD312, IRFD313 TA17444. irfd310 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    TRANSISTORS 132 GD

    Abstract: No abstract text available
    Text: tyvvys S IRFD310, IRFD311, IRFD312, IRFD313 S e m ico n d ucto r y 7 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.3A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRFD310, IRFD311, IRFD312, IRFD313 TRANSISTORS 132 GD PDF

    IRFD311

    Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v
    Text: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		IRFD310, IRFD311, IRFD312, IRFD313 IRFD313 IRFD311 FD31 IRFD310 IRFD312 a350v PDF

    IRFD313R

    Abstract: IRFD310R IRFD311R IRFD312R IRF0312
    Text: _ Rugged Power MOSFETs File N u m b er 2039 IRFD310R, IRFD311R, IRFD312R, IRFD313R Avalanche Energy Rated N-Channel Power MOSFETs 0.3A and 0.4A, 350V-400V rDs on = 3.6fi and 5.0Q N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■


    OCR Scan     		IRFD310R, IRFD311R, IRFD312R, IRFD313R 50V-400V IRFD312R IRFD313R IRFD310f IRFD310R IRFD311R IRF0312 PDF

    TA17444

    Abstract: No abstract text available
    Text: H a IRFD310, IRFD311, IRFD312, IRFD313 r r i s ” “ I CONDUCTOE 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRFD310, IRFD311, IRFD312, IRFD313 TA1744-5 IRFD313 TA17444 PDF

    irf460 to-247

    Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
    Text: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350


    OCR Scan     		0G0S711 O-204 to-205 O-220 O-247 irf331r irf343r irf341r irf353r irf351r irf460 to-247 IRF450R IRF460 IRF840R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462 PDF

    irf840 rf

    Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
    Text: THOnSON/ DISTRIBUTOR SflE 5 • TDEb&TB 0005707 ■ TCSK - Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued P a cka g e ^pr i » [j M a x im u m R a tin g s bvdss >d s (V) (A) rD S(O N ) O HM S 400 0 .3 0 0.40 0.40 0.50 1.15 1.30 1.35 1.50


    OCR Scan     		102bfi73 to-204 to-205 T0-220 O-247 IRF322 IRF320 IRF332 IRF330 IRF342 irf840 rf THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 43 025 71 0 0 5 4 1 2 0 237 ■ S3 HARRIS HAS IR F D 3 1 0 /3 1 1 /3 1 2 /3 1 3 ÌRFD31 O R /311R /312R /313R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 91 Package Features 4-PIN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • roS on = 3-6 fl ancl 5-o fl


    OCR Scan     		RFD31 /311R /312R /313R IRFD310, IRFD311, IRFD312, IRFD313 IRFD310R, IRFD311R, PDF

    fd312

    Abstract: fd 312 s
    Text: 21 H A R R IS IRFD310/ 311/ 312/313 IRFD31OR/311R/312R/313R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4 -P IN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • i'DS on = 3.6H and 5 .0 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		IRFD310/ IRFD31OR/311R/312R/313R IRFD310, IRFD311, IRFD312, IRFD313 IRFD310R, IRFD311R, IRFD312R, IRFD313R fd312 fd 312 s PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF