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    IRFI840 Price and Stock

    Vishay Siliconix IRFI840GPBF

    MOSFET N-CH 500V 4.6A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI840GPBF Tube 472 1
    • 1 $3.68
    • 10 $3.68
    • 100 $3.68
    • 1000 $1.27547
    • 10000 $1.2095
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    Quest Components IRFI840GPBF 204
    • 1 $2.88
    • 10 $2.88
    • 100 $1.44
    • 1000 $1.44
    • 10000 $1.44
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    Vishay Siliconix IRFI840GLCPBF

    MOSFET N-CH 500V 4.5A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI840GLCPBF Tube 102 1
    • 1 $3.95
    • 10 $3.95
    • 100 $3.95
    • 1000 $1.38508
    • 10000 $1.33075
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    Vishay Siliconix IRFI840G

    MOSFET N-CH 500V 4.6A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI840G Tube
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    Vishay Siliconix IRFI840GLC

    MOSFET N-CH 500V 4.5A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI840GLC Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.475
    • 10000 $3.475
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    Rochester Electronics LLC IRFI840BTU

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI840BTU Bulk 650
    • 1 -
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    • 1000 $0.46
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    Find more IRFI840 price and stock on Findchips.com

    IRFI840 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFI840 International Rectifier FullPak - Fully Isolated HEXFET Scan PDF
    IRFI840A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFI840A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI840A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFI840B Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF
    IRFI840B Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    IRFI840BTU Fairchild Semiconductor 500V N-Channel B-FET / Substitute of IRFI840A Original PDF
    IRFI840G International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI840G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI840G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.6A TO220FP Original PDF
    IRFI840G International Rectifier Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A) Scan PDF
    IRFI840G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI840G International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 500V, 4.6A, Pkg Iso TO-220 Fullpak Scan PDF
    IRFI840G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFI840G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFI840GLC International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI840GLC Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI840GLC Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO220FP Original PDF
    IRFI840GLC International Rectifier HEXFET Power Mosfet Scan PDF
    IRFI840GLC International Rectifier HEXFET Power MOSFET Scan PDF

    IRFI840 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFI840GLC, SiHFI840GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFI840B

    Abstract: IRFW840B
    Text: IRFW840B / IRFI840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW840B IRFI840B IRFI840B

    Untitled

    Abstract: No abstract text available
    Text: PD - 94864 IRFI840GPbF • Lead-Free www.irf.com 1 12/03/03 IRFI840GPbF 2 www.irf.com IRFI840GPbF www.irf.com 3 IRFI840GPbF 4 www.irf.com IRFI840GPbF www.irf.com 5 IRFI840GPbF 6 www.irf.com IRFI840GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFI840GPbF O-220

    SiHFI840G

    Abstract: IRFI840G SiHFI840G-E3
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI840G, SiHFI840G O-220 11-Mar-11 IRFI840G SiHFI840G-E3

    90-370

    Abstract: AN609 IRFI840GLC SiHFI840GLC
    Text: IRFI840GLC_RC, SiHFI840GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFI840GLC SiHFI840GLC AN609, 11-May-10 90-370 AN609

    IRFI840B

    Abstract: IRFW840B
    Text: IRFW840B / IRFI840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW840B IRFI840B IRFI840B

    Untitled

    Abstract: No abstract text available
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFI840GLC, SiHFI840GLC O-220 12-Mar-07

    90mH

    Abstract: No abstract text available
    Text: IRFW840B / IRFI840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW840B IRFI840B IRFI840B IRFI840A IRFI840BTU O-262 90mH

    Untitled

    Abstract: No abstract text available
    Text: IRFW840B / IRFI840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW840B IRFI840B IRFW840A IRFW840BTM O-263

    IRFI840G

    Abstract: No abstract text available
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI840G, SiHFI840G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI840G

    Untitled

    Abstract: No abstract text available
    Text: IRFI840G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)4.6 I(DM) Max. (A) Pulsed I(D)2.9 @Temp (øC)100# IDM Max (@25øC Amb)18 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFI840G

    E401

    Abstract: IRFI840G part marking information h 9245 marking 34 marking gB diode marking code 3432 marking code gb Marking information
    Text: TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information Notes : This part marking information applies to all devices produced before 02/26/2001 and currently for parts manufactured in GB. EXAMPLE: T HIS IS AN IRFI840G WIT H AS S EMBLY LOT CODE E401


    Original     		PDF O-220 IRFI840G E401 IRFI840G part marking information h 9245 marking 34 marking gB diode marking code 3432 marking code gb Marking information

    IRFI840G

    Abstract: SiHFI840G SiHFI840G-E3
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI840G, SiHFI840G O-220 18-Jul-08 IRFI840G SiHFI840G-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 94865 IRFI840GLCPbF • Lead-Free Document Number: 91160 12/4/03 www.vishay.com 1 IRFI840GLCPbF Document Number: 91160 www.vishay.com 2 IRFI840GLCPbF Document Number: 91160 www.vishay.com 3 IRFI840GLCPbF Document Number: 91160 www.vishay.com 4 IRFI840GLCPbF


    Original     		PDF IRFI840GLCPbF O-220

    IRFI840GLC

    Abstract: SiHFI840GLC SiHFI840GLC-E3 SiHFI840G
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFI840GLC, SiHFI840GLC O-220 11-Mar-11 IRFI840GLC SiHFI840GLC-E3 SiHFI840G

    SiHFI840G

    Abstract: IRFI840G
    Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI840G, SiHFI840G O-220 12-Mar-07 IRFI840G

    SiHFI840G

    Abstract: No abstract text available
    Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFI840GLC, SiHFI840GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFI840G

    Untitled

    Abstract: No abstract text available
    Text: IRFI840GLC Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)4.5# I(DM) Max. (A) Pulsed I(D)2.9 @Temp (øC)100# IDM Max (@25øC Amb)18 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55


    Original     		PDF IRFI840GLC

    Untitled

    Abstract: No abstract text available
    Text: PD - 94865 IRFI840GLCPbF • Lead-Free Document Number: 91160 12/4/03 www.vishay.com 1 IRFI840GLCPbF Document Number: 91160 www.vishay.com 2 IRFI840GLCPbF Document Number: 91160 www.vishay.com 3 IRFI840GLCPbF Document Number: 91160 www.vishay.com 4 IRFI840GLCPbF


    Original     		PDF IRFI840GLCPbF O-220

    k d718

    Abstract: d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC
    Text: PD-9.1208 International [mîr] Rectifier IRFI840GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated


    OCR Scan     		PDF IRFI840GLC D-6380 k d718 d718* transistor D718 transistor d718 marking code SJ transistors k d718 017 Ultra High Voltage Hexfets D718 transistor IRFI840G IRFI840GLC

    IRFI840GLC

    Abstract: No abstract text available
    Text: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


    OCR Scan     		PDF IRFI840GLC D-6380 0021b77 IRFI840GLC

    irf1840g

    Abstract: irf1840 irf18 IRFI840G
    Text: International i“R Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D I 500V V DSS= \ ^DS on = 0-85È2


    OCR Scan     		PDF IRFI840G IRF1840G T50KC1 irf1840 irf18

    RG-910

    Abstract: IRFI840 aj 312 CD 1517 IRFI840G
    Text: International S Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 5 0 0 V ^DS on = 0 -8 5 Q l D = 4 .6 A


    OCR Scan     		PDF IRFI840G O-220 RG-910 IRFI840 aj 312 CD 1517 IRFI840G

    Untitled

    Abstract: No abstract text available
    Text: 4855452 International !“R R ectifier OCH H I N R PD-9.642A IRFI840G HEXFET Pow er M O S F E T • • • • • 00J517A INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating


    OCR Scan     		PDF IRFI840G 00J517A O-220