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    IRFP254 Price and Stock

    Vishay Siliconix IRFP254PBF

    MOSFET N-CH 250V 23A TO247-3
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    DigiKey IRFP254PBF Tube 2,425 1
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    Vishay Siliconix IRFP254

    MOSFET N-CH 250V 23A TO247-3
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    Rochester Electronics LLC IRFP254B

    N-CHANNEL POWER MOSFET
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    DigiKey IRFP254B Bulk 452
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    Vishay Siliconix IRFP254NPBF

    MOSFET N-CH 250V 23A TO247-3
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    Vishay Intertechnologies IRFP254PBF

    MOSFET N-CHANNEL 250V - Bulk (Alt: 63J6862)
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    Avnet Americas IRFP254PBF Bulk 17 Weeks, 3 Days 1
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    Mouser Electronics IRFP254PBF 678
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    Verical IRFP254PBF 135 5
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    Newark IRFP254PBF Bulk 242 1
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    TME IRFP254PBF 249 1
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    EBV Elektronik IRFP254PBF 400 31 Weeks 25
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    New Advantage Corporation IRFP254PBF 325 1
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    IRFP254 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP254 IXYS TRANS MOSFET N-CH 250V 23A 3TO-247 AD Original PDF
    IRFP254 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP254 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 23A TO-247AC Original PDF
    IRFP254 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFP254 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFP254 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 23A, Pkg Style TO-247AC Scan PDF
    IRFP254 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFP254 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFP254 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRFP254 International Rectifier Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) Scan PDF
    IRFP254 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFP254 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP254 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP254 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP254 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFP254 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFP254 Unknown FET Data Book Scan PDF
    IRFP254A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFP254A International Rectifier Advanced Power Mosfet Original PDF
    IRFP254A Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRFP254 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A


    Original     		4213A IRFP254N O-247 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFP254 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 25 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		IRFP254 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		IRFP254, SiHFP254 2002/95/EC O-247AC O-247AC O-22hay 11-Mar-11 PDF

    IRFP254B

    Abstract: No abstract text available
    Text: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRFP254B IRFP254B PDF

    035H

    Abstract: IRFPE30
    Text: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ


    Original     		IRFP254NPbF O-247 12-Mar-07 035H IRFPE30 PDF

    035H

    Abstract: IRFPE30
    Text: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ


    Original     		IRFP254NPbF O-247 O-247AC IRFPE30 035H IRFPE30 PDF

    035H

    Abstract: IRFPE30
    Text: PD - 95009 IRFP254PbF • Lead-Free 1 IRFP254PbF 2 IRFP254PbF TO-247AC Package Outline Dimensions are shown in millimeters inches -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1


    Original     		IRFP254PbF O-247AC O-247-AC. IRFPE30 035H IRFPE30 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95009 IRFP254PbF • Lead-Free www.irf.com 1 2/12/04 IRFP254PbF 2 www.irf.com IRFP254PbF www.irf.com 3 IRFP254PbF 4 www.irf.com IRFP254PbF www.irf.com 5 IRFP254PbF 6 www.irf.com IRFP254PbF TO-247AC Package Outline Dimensions are shown in millimeters inches


    Original     		IRFP254PbF O-247AC O-247-AC. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95009 IRFP254PbF • Lead-Free Document Number: 91214 2/12/04 www.vishay.com 1 IRFP254PbF Document Number: 91214 www.vishay.com 2 IRFP254PbF Document Number: 91214 www.vishay.com 3 IRFP254PbF Document Number: 91214 www.vishay.com 4 IRFP254PbF Document Number: 91214


    Original     		IRFP254PbF O-247AC 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254_RC, SiHFP254_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFP254 SiHFP254 AN609, 08-Jun-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRFP254, SiHFP254 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating


    Original     		IRFP254N, SiHFP254N O-247 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRFP254, SiHFP254 O-247 O-247 O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ


    Original     		IRFP254NPbF O-247 08-Mar-07 PDF

    IRFP254A

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFP254A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 25 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		IRFP254A IRFP254A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		IRFP254, SiHFP254 2002/95/EC O-247AC O-247AC O-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Power MOSFET 50V 10A

    Abstract: 108D IRFP254A
    Text: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		IRFP254A Power MOSFET 50V 10A 108D IRFP254A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V


    OCR Scan     		IRFP254 Q003flc PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan     		IRFP254A PDF

    ZJ DIODE

    Abstract: D 92 M - 03 DIODE IRFP254 140534
    Text: IRFP254 Ü S Rectifier HEXFET Power M O S F E T • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements bSE D V DSS = 2 5 0 V


    OCR Scan     		IRFP254 O-247 O-220 O-218 \50Kfi ZJ DIODE D 92 M - 03 DIODE IRFP254 140534 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		IRFP254 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VDS= 250V


    OCR Scan     		IRFP254A 300nF ERFP254A PDF

    IRFP55

    Abstract: IRFP256 IRFP255 IRFP551 IRFP254 IRFP257 TG-247 mosfet irfp 250 N
    Text: Rugged Power MOSFETs File Num ber 2289 IRFP254, IRFP255 IRFP256, IRFP257 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDston = 0.14 O and 0.17 Cl N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		IRFP254, IRFP255 IRFP256, IRFP257 92CS-42690 IRFP255, IRFP256 IRFP257 92GS-44116 IRFP55 IRFP255 IRFP551 IRFP254 TG-247 mosfet irfp 250 N PDF

    IRFP256

    Abstract: H30E2 IRFP 620 irfp254
    Text: H30E271 0054210 E7T • HAS H a r r is IRFP254, IRFP255 IRFP256, IRFP257 N-Channel Power MOSFETs Avalanche Energy Rated A ug ust 19 9 1 Features Package TO-247 TOP VIEW • 21A and 23A, 250V and 275V • rDS on = 0.14 i l and 0 .1 7ft • Single Pulse Avalanche Energy Rated


    OCR Scan     		H30E271 IRFP254, IRFP255 IRFP256, IRFP257 O-247 IRFP255, IRFP257 IRFP256 H30E2 IRFP 620 irfp254 PDF