IRFP460 APPLICATION NOTE
Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
Text: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP460
IRFP460 APPLICATION NOTE
IRFP460 application
IRFP460 transistor
irfp460 dc motor circuit
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Untitled
Abstract: No abstract text available
Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching
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IRFP460,
SiHFP460
O-247
O-247
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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datasheet irfp460 mosfet
Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
Text: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP460
TA17465.
datasheet irfp460 mosfet
IRFP460 application
irfp460
IRFP460 APPLICATION NOTE
5102 mosfet
irfp460 data sheet
power mosfet 500v 20a circuit
TB334
irfp460 dc motor circuit
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IRFP460 application
Abstract: IRFP460PBF Vishay TO-247AC Package IRFP460 APPLICATION NOTE
Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching
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IRFP460,
SiHFP460
O-247
O-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP460 application
IRFP460PBF
Vishay TO-247AC Package
IRFP460 APPLICATION NOTE
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IRFP460 application
Abstract: IRFP460PBF irfp460 mosfet IRFP460 SiHFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix
Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching
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IRFP460,
SiHFP460
O-247
O-247
11-Mar-11
IRFP460 application
IRFP460PBF
irfp460 mosfet
IRFP460
siliconix irfp460
MJ 2400
irfp460 i
SILICONIX MARKING IRFP460
irfp460 siliconix
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Untitled
Abstract: No abstract text available
Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching
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IRFP460,
SiHFP460
O-247
O-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFP460 application
Abstract: application IRFP460
Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching
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IRFP460,
SiHFP460
O-247
O-247
11-Mar-11
IRFP460 application
application IRFP460
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFP460 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.25Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 22 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
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IRFP460
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SCHEMATIC POWER SUPPLY WITH IGBTS
Abstract: smps 450W IRFP460 application IRFP460 full bridge make full-bridge SMPS IRFP460 APPLICATION NOTE IRFP460 h motor bridge SCHEMATIC 450w smps dc-dc converter with irfp460 schematic SMPS 12V
Text: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications Application Note September 2000 AN-7523 Authors: Alexander H. Craig and Sampat Shekhawat IGBTs have been providing motor drive circuit designers with the ability to increase power density and reduce overall system
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AN-7523
SCHEMATIC POWER SUPPLY WITH IGBTS
smps 450W
IRFP460 application
IRFP460 full bridge
make full-bridge SMPS
IRFP460 APPLICATION NOTE
IRFP460 h motor bridge
SCHEMATIC 450w smps
dc-dc converter with irfp460
schematic SMPS 12V
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40HFL40S02
Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045 IRFP460
Text: 80SQ. Series Vishay High Power Products Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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DO-204AR
11-Mar-11
40HFL40S02
80SQ
80SQ030
80SQ035
80SQ040
80SQ045
IRFP460
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Untitled
Abstract: No abstract text available
Text: 242NQ030R Vishay High Power Products Schottky Rectifier, 240 A FEATURES • • • • • Lug terminal cathode HALF-PAK D-67 Reverse • • • Base anode • 150 °C TJ operation Unique high power, HALF-PAK module Replaces four parallel DO-5’s Easier to mount and lower profile than DO-5’s
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242NQ030R
2002/95/EC
242NQ030R
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 243NQ100PbF Vishay High Power Products Schottky Rectifier, 240 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability
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243NQ100PbF
243NQ.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 409DMQ135 Vishay High Power Products Schottky Rectifier, 400 A FEATURES • 175 °C TJ operation 1 3 2 • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Low forward voltage drop TO-244AB Isolated Doubler
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409DMQ135
2002/95/EC
O-244AB
409DMQ135
11-Mar-11
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FCSP0530
Abstract: 40HFL40S02 IRFP460
Text: FCSP0530TR Vishay High Power Products FlipKY Chip Scale Package Schottky Barrier Rectifier, 0.5 A FEATURES • Ultra low VF to footprint area • Very low profile < 0.6 mm RoHS • Low thermal resistance COMPLIANT • Supplied tested and on tape and reel
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FCSP0530TR
11-Mar-11
FCSP0530
40HFL40S02
IRFP460
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Untitled
Abstract: No abstract text available
Text: 183NQ100PbF Vishay High Power Products Schottky Rectifier, 180 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability
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183NQ100PbF
183NQ.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 123NQ100PbF Vishay High Power Products Schottky Rectifier, 120 A FEATURES • 175 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability
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123NQ100PbF
123NQ.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: FCSP130LTR Vishay High Power Products FlipKY , 1 A Chip Scale Package Schottky Barrier Rectifier FEATURES • Ultra low VF per footprint area • Low leakage RoHS • Low thermal resistance COMPLIANT • One-fifth footprint of SMA • Super low profile 0.6 mm
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FCSP130LTR
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 175BGQ045 Vishay High Power Products Schottky Rectifier, 175 A FEATURES Cathode • • • • • 150 °C TJ operation High frequency operation Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term
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175BGQ045
2002/95/EC
175BGQ045
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 241NQ045R Vishay High Power Products Schottky Rectifier, 240 A FEATURES • 175 °C TJ operation Lug terminal cathode • Unique high power, HALF-PAK module • Replaces four parallel DO-5’s • Easier to mount and lower profile than DO-5’s HALF-PAK D-67 Reverse
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241NQ045R
2002/95/EC
241NQ045R
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 122NQ030PbF Vishay High Power Products Schottky Rectifier, 120 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability
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122NQ030PbF
122NQ.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 183NQ100R Vishay High Power Products Schottky Rectifier, 180 A FEATURES • 175 °C TJ operation Lug terminal cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Low forward voltage drop
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183NQ100R
183NQ100R
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 125NQ015PbF Vishay High Power Products Schottky Rectifier, 120 A FEATURES • 125 °C TJ operation VR < 5 V Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability
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125NQ015PbF
125NQ.
11-Mar-11
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irfp460 mosfet
Abstract: No abstract text available
Text: IRFP460 Advanced Power MOSFET FEATURES B V = 500 V ^ D S o n = 0 .2 5 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V
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IRFP460
irfp460 mosfet
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IXTH40N25
Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025
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IXTD67N10-7X
IXTD75N10-7X
IXTD42N20-7X
IXTD50N20-7X
IXTD40N25-6X
IXTD40N30-7X
IRFC450-5X
IRFC460-6X
IXTD21N50-7X
IXTD24N50-7X
IXTH40N25
irfp450 equivalent
IXTH7P50
IXTH12N90
IXTD11N80
IRFP460 equivalent
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