Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFY9140 Search Results

    SF Impression Pixel

    IRFY9140 Price and Stock

    International Rectifier IRFY9140CM

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IRFY9140CM 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IRFY9140 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY9140 International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9140 International Rectifier -100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package Original PDF
    IRFY9140 Semelab P-Channel Power MOSFET for HI-REL Applications Original PDF
    IRFY9140 International Rectifier HEXFET Transistors Scan PDF
    IRFY9140C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9140C International Rectifier Power MOSFET Original PDF
    IRFY9140C Semelab P-Channel Power MOSFET for HI-REL Applications Original PDF
    IRFY9140C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY9140CM International Rectifier Power MOSFET Original PDF
    IRFY9140CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9140CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9140CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY9140M International Rectifier -100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package Original PDF
    IRFY9140M International Rectifier -100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package Original PDF
    IRFY9140M International Rectifier HEXFET Transistors Scan PDF
    IRFY9140X Semelab P-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF

    IRFY9140 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFY9140X

    Abstract: No abstract text available
    Text: IRFY9140X Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 15.8A RDS(ON) = 0.2Ω Ω 1.0 (0.039)


    Original     		PDF IRFY9140X O257AB O257AB O220M) 13-Sep-02 IRFY9140X

    IRFY9140

    Abstract: SHD225409
    Text: SENSITRON SEMICONDUCTOR SHD225409 TECHNICAL DATA DATA SHEET 871, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Hermetic Metal Package œ Fast Switching œ Electrically Equivalent to IRFY9140 Series MAXIMUM RATINGS


    Original     		PDF SHD225409 IRFY9140 SHD225409

    TRANSISTORS sec 537

    Abstract: No abstract text available
    Text: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF 94197C O-257AA) IRFY9140, IRFY9140M IRFY9140 5M-1994. O-257AA. TRANSISTORS sec 537

    IRFY9140C

    Abstract: No abstract text available
    Text: IRFY9140C MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) VDSS ID(cont) RDS(on) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)


    Original     		PDF IRFY9140C 257AA -100V ABSOLUTE-48 IRFY9140C

    IRFY9140C

    Abstract: IRFY9140CM
    Text: PD - 91294C POWER MOSFET THRU-HOLE TO-257AA IRFY9140C IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91294C O-257AA) IRFY9140C IRFY9140CM IRFY9140C, -200A/ -100V, IRFY9140C IRFY9140CM

    IRFY9140

    Abstract: SHD226409
    Text: SENSITRON SEMICONDUCTOR SHD226409 TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • -100 Volt, 0.21 Ohm, -13A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Equivalent to IRFY9140 Series MAXIMUM RATINGS


    Original     		PDF SHD226409 IRFY9140 SHD226409

    P-channel power mosfet irf

    Abstract: IRF P CHANNEL MOSFET 10A 100V IRFY9140 IRFY9140C IRFY9140CM IRFY9140M 150-TRt
    Text: PD - 94197 POWER MOSFET THRU-HOLE TO-257AA IRFY9140,IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY9140 IRFY9140M IRFY9140 IRFY9140, -200A/ -100V, O-257AA P-channel power mosfet irf IRF P CHANNEL MOSFET 10A 100V IRFY9140C IRFY9140CM IRFY9140M 150-TRt

    IRFY9140

    Abstract: IRFY9140C IRFY9140CM IRFY9140M N- and P-Channel 30-V D-S MOSFET
    Text: PD - 94197A POWER MOSFET THRU-HOLE TO-257AA IRFY9140,IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF 4197A O-257AA) IRFY9140 IRFY9140M IRFY9140 IRFY9140, -200A/ -100V, IRFY9140C IRFY9140CM IRFY9140M N- and P-Channel 30-V D-S MOSFET

    max6013

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226409 TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Equivalent to IRFY9140 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226409 IRFY9140 SHD226409 O-257 max6013

    Untitled

    Abstract: No abstract text available
    Text: PD - 94197B POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF 94197B O-257AA) IRFY9140 IRFY9140M IRFY9140, IRFY9140M 5M-1994. O-257AA.

    HEXFET Power MOSFET P-Channel

    Abstract: IRFY9140C IRFY9140CM
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFY9140CM HEXFET Power MOSFET P-Channel IRFY9140C IRFY9140CM

    Untitled

    Abstract: No abstract text available
    Text: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91294D O-257AA) IRFY9140C, IRFY9140CM IRFY9140C 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: IRFY9140 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D)8.2 @Temp (øC)100# IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55


    Original     		PDF IRFY9140

    irf 640

    Abstract: IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM
    Text: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91294D O-257AA) IRFY9140C, IRFY9140CM IRFY9140C 5M-1994. O-257AA. irf 640 IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM

    IRFY9140

    Abstract: No abstract text available
    Text: IRFY9140 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 -100V -13A Ω 0.21Ω FEATURES


    Original     		PDF IRFY9140 -100V Continuou-52 IRFY9140

    P-channel power mosfet irf

    Abstract: IRF P CHANNEL MOSFET 10A 100V IRFY9140C IRFY9140CM
    Text: PD - 91294B POWER MOSFET THRU-HOLE TO-257AA IRFY9140C,IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9140C 0.20 Ω -15.8A Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91294B O-257AA) IRFY9140C IRFY9140CM IRFY9140C IRFY9140C, -200A/ -100V, P-channel power mosfet irf IRF P CHANNEL MOSFET 10A 100V IRFY9140CM

    IRF P CHANNEL MOSFET 10A 100V

    Abstract: SEC IRF 640 IRFY9140 IRFY9140C IRFY9140CM IRFY9140M
    Text: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF 94197C O-257AA) IRFY9140, IRFY9140M IRFY9140 5M-1994. O-257AA. IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 IRFY9140 IRFY9140C IRFY9140CM IRFY9140M

    IRFY9140

    Abstract: SHD226409
    Text: SENSITRON SEMICONDUCTOR SHD226409 TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.21 Ohm, -13A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Equivalent to IRFY9140 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226409 IRFY9140 SHD226409

    IRFY9140C

    Abstract: IRFY9140CM
    Text: Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFY9140CM IRFY9140C IRFY9140CM

    Untitled

    Abstract: No abstract text available
    Text: IRFY9140M Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)


    Original     		PDF IRFY9140M

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    Untitled

    Abstract: No abstract text available
    Text: mi =Vr= INI SEM E IRFY9140C LAB MECHANICAL DATA P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 . 8 3 (0 .1 9 0 ) V DSS -1 0 0 V -1 2 A ^D(cont) 0.21ft ^D S (on) FEATURES • HERMETICALLY SEALED TO -257AA METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS


    OCR Scan     		PDF IRFY9140C -257AA

    Untitled

    Abstract: No abstract text available
    Text: I . ,• I Provisional Datasheet No. PD 9.1294A International IGR Rectifier IRFY9140CM HEXFET8 POWER MOSFET P-CHANNEL -100 Volt, 0.2£2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­


    OCR Scan     		PDF IRFY9140CM SS452