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    IRG4BC30FD Price and Stock

    Infineon Technologies AG IRG4BC30FD1

    IGBT 600V 31A 100W TO220AB
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    Infineon Technologies AG IRG4BC30FD-S

    IGBT 600V 31A 100W D2PAK
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    DigiKey IRG4BC30FD-S Tube 200
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    Infineon Technologies AG IRG4BC30FDPBF

    IGBT 600V 31A 100W TO220AB
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    RS IRG4BC30FDPBF Bulk 1
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    Rochester Electronics LLC IRG4BC30FD1PBF

    IGBT 600V 31A TO220AB
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    DigiKey IRG4BC30FD1PBF Tube 210
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    Infineon Technologies AG IRG4BC30FD1PBF

    IGBT 600V 31A 100W TO220AB
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    Verical IRG4BC30FD1PBF 210 175
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    RS IRG4BC30FD1PBF Bulk 2
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    Rochester Electronics IRG4BC30FD1PBF 210 1
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    Find more IRG4BC30FD price and stock on Findchips.com

    IRG4BC30FD Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC30FD International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; A IRG4BC30FD with Standard Packaging Original PDF
    IRG4BC30FD International Rectifier IRGP440UD2 Original PDF
    IRG4BC30FD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; A IRG4BC30FD1 with Standard Packaging Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode Original PDF
    IRG4BC30FD1 International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode Original PDF
    IRG4BC30FD1PbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB Original PDF
    IRG4BC30FD1PBF International Rectifier 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package>20kHz resonant mode; Similar to IRG4BC30FD1 with Lead Free Packaging Original PDF
    IRG4BC30FDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3TO-220AB Original PDF
    IRG4BC30FDPBF International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC30FD with Lead Free Packaging Original PDF
    IRG4BC30FD-S International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK Original PDF
    IRG4BC30FD-S International Rectifier 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging Original PDF
    IRG4BC30FD-SPbF International Rectifier TRANS IGBT CHIP N-CH 600V 31A 3D2-PAK Original PDF
    IRG4BC30FD-SPBF International Rectifier 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; Similar to IRG4BC30FD-S with Lead Free Packaging Original PDF
    IRG4BC30FD-STRR International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK Original PDF
    IRG4BC30FDSTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 31A 100W D2PAK Original PDF

    IRG4BC30FD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4BC30FD

    Abstract: diode bridge LT 405
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB IRG4BC30FD diode bridge LT 405

    Untitled

    Abstract: No abstract text available
    Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5970A IRG4BC30FD-SPbF 20kHz EIA-418.

    IRG4BC30FD

    Abstract: No abstract text available
    Text: PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD O-220AB IRG4BC30FD

    IRF1010 E DATASHEET

    Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB char10 FD100H06A5. O-220 IRF1010 E DATASHEET IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC

    VG 96929

    Abstract: IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30
    Text: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-S 20kHz VG 96929 IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30

    swiching transistor

    Abstract: 9561 600v 8A ultra fast recovery diode to220
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB Minimi10 FD100H06A5. O-220 swiching transistor 9561 600v 8A ultra fast recovery diode to220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220

    Untitled

    Abstract: No abstract text available
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB

    IRF1010

    Abstract: IRG4BC30FD1 TO220AB IGBT
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220 IRF1010 IRG4BC30FD1 TO220AB IGBT

    IRG4BC30FD

    Abstract: fl 014
    Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91451B IRG4BC30FD O-220AB IRG4BC30FD fl 014

    IRG4BC30FD

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD 9.1451 IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20


    Original     		PDF IRG4BC30FD O-220AB IRG4BC30FD

    Untitled

    Abstract: No abstract text available
    Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5970A IRG4BC30FD-SPbF 20kHz

    555 triangular wave

    Abstract: IRG4BC30FD1PBF
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. O-220 555 triangular wave IRG4BC30FD1PBF

    ST IGBT code marking

    Abstract: TO-220AB transistor package 113 marking code transistor TO220AB IGBT NAT 3 transistor b 647 transistor
    Text: PD - 94938 IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter


    Original     		PDF IRG4BC30FDPbF O-220AB ST IGBT code marking TO-220AB transistor package 113 marking code transistor TO220AB IGBT NAT 3 transistor b 647 transistor

    Untitled

    Abstract: No abstract text available
    Text: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-S 20kHz

    ST IGBT code marking

    Abstract: irf 345 TO-220AB transistor package TRANSISTOR marking ar code
    Text: PD - 94938 IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter


    Original     		PDF IRG4BC30FDPbF O-220AB O-220AB. ST IGBT code marking irf 345 TO-220AB transistor package TRANSISTOR marking ar code

    IRF530S

    Abstract: No abstract text available
    Text: PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-SPbF 20kHz EIA-418. IRF530S

    Untitled

    Abstract: No abstract text available
    Text: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter


    Original     		PDF 4938A IRG4BC30FDPbF 20kHz O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter


    Original     		PDF 4938A IRG4BC30FDPbF 20kHz O-220AB

    VG 96929

    Abstract: IRG4BC30FD-S
    Text: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-S 20kHz EIA-418. VG 96929 IRG4BC30FD-S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: International Iö R Rectifier PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC30FD O-220AB conT0-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC30FD T0-220AB 5SM52