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Catalog Datasheet	Type	Document Tags	PDF
300C Abstract: IRG4CH50SB irg4ch50s ir igbt 1200V 10A Text: PD- 91770 IRG4CH50SB IRG4CH50SB IGBT Die in Wafer Form C 1200 V Size 5 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage	Original	IRG4CH50SB IRG4CH50SB 150mm, IRG4PH50SB 300C irg4ch50s ir igbt 1200V 10A	PDF

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300C

Abstract: IRG4CH50SB irg4ch50s ir igbt 1200V 10A
Text: PD- 91770 IRG4CH50SB IRG4CH50SB IGBT Die in Wafer Form C 1200 V Size 5 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage

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IRG4CH50SB IRG4CH50SB 150mm, IRG4PH50SB 300C irg4ch50s ir igbt 1200V 10A

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