transistor c905
Abstract: No abstract text available
Text: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2
C-911
S5452
TQ-220AB
C-912
transistor c905
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transistor c925
Abstract: DIODE C921
Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
-10ns
D020717
SMD-220
C-928
transistor c925
DIODE C921
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C-865
Abstract: smd C865 AN-994 D-12 IRGBC30K-S SMD-220 C865 C863
Text: Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
SMD-220
C-866
C-865
smd C865
AN-994
D-12
IRGBC30K-S
SMD-220
C865
C863
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transistor c905
Abstract: LE C906 c912 c906 transistor
Text: P D - 9.1107 Iitemational S Rectifier IRGBC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ps @125°C, VGE= 15V • Switching-loss rating includes all "tail" losses
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OCR Scan
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-10ps
IRGBC30KD2
O-22QAB
C-912
transistor c905
LE C906
c912
c906 transistor
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c845
Abstract: c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT
Text: Previous Datasheet Index Next Data Sheet PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K
O-220AB
C-848
c845
c845 TO 92
D-12
IRGBC30K
C844
c847
C-844
DC MOTOR CONTROL IGBT
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Untitled
Abstract: No abstract text available
Text: P D - 9.1132 International d û Rectifier IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 1 Ops @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
C-865
SMD-220
C-866
0020fc
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transistor c925
Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Text: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses
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OCR Scan
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IRGBC30KD2-S
C-927
SMD-220
C-928
transistor c925
smd transistor c928
transistor c923
c927
diode c928
DIODE C921
transistor smd qe
c924
diode smd qe
C925
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c845
Abstract: No abstract text available
Text: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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OCR Scan
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IRGBC30K
C-847
O-22QAB
C-848
4A554S2
0020b3fl
c845
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PDF
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b132 transistor
Abstract: IRGBC30KD2
Text: PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGBC30KD2
O-220AB.
O-220AB
b132 transistor
IRGBC30KD2
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IRGBC30KD2
Abstract: No abstract text available
Text: PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGBC30KD2
O-220AB.
O-220AB
IRGBC30KD2
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AN-994
Abstract: IRGBC30K-S SMD-220 GC smd transistor
Text: PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
AN-994
IRGBC30K-S
SMD-220
GC smd transistor
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c845
Abstract: c846 transistor D-12 IRGBC30K C-844
Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K
O-220AB
C-848
c845
c846 transistor
D-12
IRGBC30K
C-844
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c846 transistor
Abstract: c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"
Text: P D -9.1071 kitemational ËüRectifier IRGBC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, Vqe = 15V • Switching-loss rating includes ail "tail" losses • Optimized for high operating frequency over 5kHz
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OCR Scan
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IRGBC30K
TQ-220AB
C-848
c846 transistor
c844
transistor C-844
C-843
transistor c848
C-844
power transistor c844
"Bipolar transistors"
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IRGBC30KD2-S
Abstract: GC smd diode AN-994 SMD-220
Text: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC30KD2-S
applica480V
SMD-220
IRGBC30KD2-S
GC smd diode
AN-994
SMD-220
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Untitled
Abstract: No abstract text available
Text: P D - 9.1132 bitemational [ÎQR 1Rectifier IRGBC30K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
IRQBC30K-S
SMD-220
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IRGKI200F06
Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U
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IRGB420U
IRGP420U
IRGB430U
IRGP430U
IRGBC20K
IRGPC20K
IRGBC20K-S
IRGBC20M
IRGBC20M-S
IRGPC20M
IRGKI200F06
IRGNIN150M06
IRGKI120F06
IRGDDN600M06
IRGKI115U06
IRGBC20FD2
IRGTIN025M12
IRGTI140U06
IRGPC50U
IRGKI165F06
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motor IG 2200 19 X 000 15 R
Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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-91594C
IRG4BC30KD-S
motor IG 2200 19 X 000 15 R
AN-994
IRG4BC30KD-S
IRGBC30KD2-S
IRGBC30MD2-S
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ic c 838
Abstract: IRG4PC30KD IRGBC30KD2 IRGBC30MD2
Text: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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-91587A
IRG4PC30KD
ic c 838
IRG4PC30KD
IRGBC30KD2
IRGBC30MD2
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IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRGKI165F06
IRGDDN600M06
IRGDDN600K06
IRF7311
IRGNIN075
IRFK6H054
IRF7601
IRLI2203N
IRLML2803
IRLML5103
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TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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O-220AB
IRG4BC40S
IRGBC20S
IRGBC30S
IRGBC40S
O-247AC
IRG4PC40S
IRGPC30S
IRGPC40S
10-30kHz)
IRGKI200F06
IRGNIN150M06
IRGTI165F06
IRGBC20FD2
IRGKI115U06
irgti140u06
IRG4PC40S
IRGPH40FD2
IRG4BC30UD
IRGNI115U06
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Untitled
Abstract: No abstract text available
Text: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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-91587A
IRG4PC30KD
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Untitled
Abstract: No abstract text available
Text: PD -95557 IRG4PC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , T J = 125°C, VGE = 15V Combines low conduction losses with high
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IRG4PC30KDPbF
O-247AC
IRFPE30
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AN-994
Abstract: IRGBC30K-S IRGBC30M-S
Text: PD - 95785 IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
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IRG4BC30K-SPbF
AN-994.
AN-994
IRGBC30K-S
IRGBC30M-S
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